• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.110.2-110.2
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• 2011

일본 Sanyo 사에 의해서 획기적으로 HIT 태양전지가 개발된 바 있다. 이러한 HIT 태양전지는 기존의 확산-접합 Si 태양전지에 비해서 저비용 고효율의 장점을 갖는다: 22% 이상의 변환효율, $200^{\circ}C$ 이하의 공정온도, 낮은 태양전지 온도 의존도, 높은 개방전압. 한편 Sanyo사의 HIT 태양전지는 n-형 Si 웨이퍼를 이용한 반면에, 최근 미국 National Renewable Energy Laboratory는 p-형 Si 웨이퍼를 이용해서 변환효율 19% 대의 HIT 태양전지를 개발한 바 있다. 그 동안 지속적으로 p-형 Si HIT 태양전지를 고효율화하기(< 22%) 위해서 많은 노력이 진행되어 왔지만 이와 같은 노력에도 불구하고 아직 p-형 HIT는 n-형 HIT 태양전지에 비해서 다소 성능면에서 떨어져 있다. 본 연구는 n- 및 p-형 실리콘 웨이퍼로 구성된 HIT 태양전지의 물리적인 차이점에 초점을 맞추고, 결정 및 비정질 실리콘 층의 역할에 대해서 연구하였다. 특히 태양전지 효율을 향상시키는 요소들로서 결정 실리콘의 불순물 준위(n- 및 p-형) 또는 비저항, 비정질 실리콘으로 구성된 emitter 층, intrinsic 층, 경계면이 고려되었다. 그리고 이러한 요소들이 HIT 태양전지에 미치는 영향을 조사하기 위해서 AMPS-1D 컴퓨터 프로그램을 사용하였고, 이를 통해서 HIT 태양전지의 결정 및 비정질 실리콘 층의 역할을 물리적 정량적으로 분석하였다. 본 연구에 적용되는 HIT는 ITO/a-Si:H(p+)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n+) 및 ITO/a-Si:H(n+)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/a-Si:H(p+)의 구조로서 다음과 같은 태양전지 특성을 갖는다: n-형 HIT의 경우, fill factor ~ 0.78, 단락전류밀도 ~ 38.1 $mA/cm^2$, 개방전압 0.74 V, 변환효율 22.3 % (그리고 p-형 HIT의 경우, fill factor ~ 0.76, 단락전류밀도 ~ 36.5 $mA/cm^2$, 개방전압 0.69 V, 변환효율 19.4 %).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.192-197
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• 2017

Hydrogenated Amorphous Silicon (a-Si:H) is used as an emitter layer in HIT (heterojunction with Intrinsic Thin layer) solar cells. Its low band gap and low optical properties (low transmittance and high absorption) cause parasitic absorption on the front side of a solar cell that significantly reduces the solar cell blue response. To overcome this, research on CSC (carrier Selective Contacts) is being actively carried out to reduce carrier recombination and improve carrier transportation as a means to approach the theoretical efficiency of silicon solar cells. Among CSC materials, molybdenum oxide ($MoO_x$) is most commonly used for the hole transport layer (HTL) of a solar cell due to its high work function and wide band gap. This paper analyzes the electrical and optical properties of $MoO_x$ thin films for use in the HTL of HIT solar cells. The optical properties of $MoO_x$ show better performance than a-Si:H and ${\mu}c-SiO_x:H$.

• Bulletin of the Korean Chemical Society
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• v.27 no.8
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• pp.1175-1180
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• 2006

Si-C composites were prepared by the carbonization of polyaniline (PAn) coated on silicone powder. The physical and electrochemical properties of the Si-C composites were characterized by particle-size analysis, X-ray diffraction, scanning electron microscopy, and battery electrochemical tests. The average particle size of Si was increased by the coating of Pan but somewhat reduced by the carbonization to give silicone-carbon composites. The co-existence of crystalline silicone and amorphous-like carbon was confirmed by XRD analyses. SEM photos showed that the silicone particles were well covered with carbonaceous materials, depending on the PAn content. Si-C$\mid$Li cells were fabricated using the Si-C composites and tested using galvanostatic charge-discharge. Si-C$\mid$Li cells gave better electrochemical properties than Si|Li cells. Si-C$\mid$Li cells using Si-C from HCl-undoped precursor PAn showed better electrochemical properties than precursor PAn doped in HCl. The addition of an electrolyte containing 4-fluoroethylene carbonate (FEC) increased the initial discharge capacity. Also, another electrochemical test, the galvanostatic charge-discharge test with GISOC (gradual increasing of the state of charge) was carried out. Si-C(Si:PAn = 50:50 wt. ratio)|Li cell showed 414 mAh/g of reversible specific capacity, 75.7% of IIE (initial intercalation efficiency), 35.4 mAh/g of IICs (surface irreversible specific capacity).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.133-138
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• 2017

We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.106-110
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• 2014

The passivation property of $Al_2O_3$ thin film formed using atomic layer deposition (ALD) for the application of crystalline Si solar cells was investigated using microwave photoconductance decay (${\mu}$-PCD). After post-annealing at $400^{\circ}C$ for 5 min, $Al_2O_3$ thin film exhibited the structural stability having amorphous nature without the interfacial reaction between $Al_2O_3$ and Si. The post-annealing at $400^{\circ}C$ for 5 min led to an increase in the relative effective lifetime of $Al_2O_3$ thin film. This could be associated with the field effective passivation combined with surface passivation of textured Si. The capacitance-voltage (C-V) characteristics of the metal-oxide-semiconductor (MOS) with $Al_2O_3$ thin film post-annealed at $400^{\circ}C$ for 5 min was carried out to evaluate the negative fixed charge of $Al_2O_3$ thin film. From the relationship between flatband voltage ($V_{FB}$) and equivalent oxide thickness (EOT), which were extracted from C-V characteristics, the negative fixed charge of $Al_2O_3$ thin film was calculated to be $2.5{\times}10^{12}cm^{-2}$, of which value was applicable to the passivation layer of n-type crystalline Si solar cells.

• Applied Microscopy
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• v.47 no.1
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• pp.50-54
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• 2017

The microstructure, the crystallization behavior, and magnetic properties of FeSi-based soft magnetic alloys (FINEMET) were investigated using transmission electron microscopy, X-ray diffraction, and coercive force measurements. The amorphous $Fe_{73.28}Si_{13.43}B_{8.72}Cu_{0.94}Nb_{3.63}$ alloys particles, prepared in $10^{-4}$ torr by gas atomization process, were heat treated at $530^{\circ}C$, $600^{\circ}C$, and $670^{\circ}C$ for 1 hour in a vacuum of $10^{-2}$ torr. Nanocrystalline Fe precipitation was first formed followed by the grain growth. Phase formation and crystallite sizes was compared linked to its magnetic behavior, which showed that excellent soft magnetic property can directly be correlated with its microstructure.

• Korean Journal of Metals and Materials
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• v.49 no.5
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• pp.362-366
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• 2011

Aluminosilicate inorganic polymer binder has been studied as an alternative to ordinary Portland cement due to its higher physical properties, chemical resistance and thermal resistance. This study has been carried out in an attempt to understand the hardening characteristics of aluminosilicate binder by varying the content of calcium. Samples with four different ratios of Al, Si, and Ca were synthesized in this study with the Al:Si:Ca mol ratio being 1.00:1.85~1.98:0.29~2.12. Furthermore, an alkali silicate solution was prepared with the sodium hydroxide (NaOH) and sodium silicate (NaSi). The hardening characteristics of the specimens were analyzed using XRD, SEM, and TG/DTA. In addition, compressive strength and sintering time of specimens were measured as a function of calcium content. The results showed that the specimen containing 2.12 mol% calcium offered the highest compressive strength. However, the compressive strength of the specimen containing 0.26 mol% calcium was lower relative to the other specimens. The results displayed a distinct tendency that as more calcium was added to the inorganic polymer, setting time became shorter. When calcium was added to the inorganic polymer structure, a second phase was not formed, indicating that the addition of calcium does not affect the crystalline structure.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.1076-1086
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• 1994

This study covers synthetic effect of the various hydrothermal treatments on formation of artificially made kaolinite mineral. The hydrothermal treatment includes the temperature treatment with time duration, addition of seeds, particle size of the starting material used, pH variation and the different types of organic acids. A colloidal silica and alumina sol which are commercially available are used for this study. A colloidal silica and alumina sol are mixed by the atomic ratio of Al/Si = 1, based on the theoretical kaolinite composition and calcined at $600^{\circ}C$ for 8 hours duration. It was found that the kaolinitic clay mineral was well developed; thereby, the different patterns of crystalline mineral are appeared. Spherical type as a crystal form was distinctively formed at the temperature of 20$0^{\circ}C$ to 25$0^{\circ}C$ with short duration time, while platy type as a crystal was highly yielded at 300~35$0^{\circ}C$. Moreover, by adding more than 20 wt% of seed as the natural kaolinitic clay to the starting material is widely distributed and developed when 2 ${\mu}{\textrm}{m}$ or less particle size of the starting material is used; also, when they are heat-treated at the temperature of 25$0^{\circ}C$ with 5 hours duration. With respect of the effect of pH variation on formation of the synthetic kaolinite minerals, the crystalline minerals are highly yielded at less than pH 2 and gradually diminished at more than pH9. Regarding to the effect of different acids on development of the kaolinite mineral, the organic acids with high chelating capacity produces good formation of crystalline minerals; whereas, amine radical-(NH2) is not an effective agent to generate the crystalline minerals.

• Journal of Surface Science and Engineering
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• v.50 no.3
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• pp.177-182
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• 2017

The properties of electroless Ni-B thin film on diamond powder with different parameters (temperature, pH, surfactant etc.) were studied. The surface morphology, structure and composition distribution of the Ni-B film were observed by field effect scanning electron microscope (FE-SEM), energy-dispersive spectrometer (EDS), X-ray diffraction (XRD) and Auger electron spectroscopy (AES). The growth rate of Ni-B film was increased with increase of bath temperature. The B content in Ni-B film was reduced with increase of bath pH. As a result the structure of Ni-B film was changed from amorphous to crystalline structure. The PVP in solution plays multi-functional roles as a dispersant and a stabilizer. The Ni-B film deposited with adding 0.1 mM-PVP was strongly introduced an amorphous structure with higher B content (25 at.%). Also the crystallite size of Ni-B film was reduced from 12.7 nm to 5.4 nm.