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http://dx.doi.org/10.4313/JKEM.2017.30.3.192

A Study on the Selective Hole Carrier Extraction Layer for Application of Amorphous/crystalline Silicon Heterojunction Solar Cell  

Kim, Yongjun (College of Infomation and Communication Engineering, Sungkyunkwan University)
Kim, Sunbo (Department of Energy Science, Sungkyunkwan University)
Kim, Youngkuk (College of Infomation and Communication Engineering, Sungkyunkwan University)
Cho, Young Hyun (College of Infomation and Communication Engineering, Sungkyunkwan University)
Park, Chang-kyun (Solar R&D division, JUSUNG Engineering Co. Ltd.)
Yi, Junsin (College of Infomation and Communication Engineering, Sungkyunkwan University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.30, no.3, 2017 , pp. 192-197 More about this Journal
Abstract
Hydrogenated Amorphous Silicon (a-Si:H) is used as an emitter layer in HIT (heterojunction with Intrinsic Thin layer) solar cells. Its low band gap and low optical properties (low transmittance and high absorption) cause parasitic absorption on the front side of a solar cell that significantly reduces the solar cell blue response. To overcome this, research on CSC (carrier Selective Contacts) is being actively carried out to reduce carrier recombination and improve carrier transportation as a means to approach the theoretical efficiency of silicon solar cells. Among CSC materials, molybdenum oxide ($MoO_x$) is most commonly used for the hole transport layer (HTL) of a solar cell due to its high work function and wide band gap. This paper analyzes the electrical and optical properties of $MoO_x$ thin films for use in the HTL of HIT solar cells. The optical properties of $MoO_x$ show better performance than a-Si:H and ${\mu}c-SiO_x:H$.
Keywords
Carrier selective contacts; Molybdenum oxide; High work function; Hole barrier; Band offset; Heterojunction solar cell;
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