• Applied Microscopy
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• v.29 no.2
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• pp.255-263
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• 1999

We have investigated the interfacial reactions in Co/Ti multilayer thin films prepared by DC Magnetron sputtering system. We observed that the amorphous Co-Ti phase formed by SSAR (Solid State Amorphization Reaction) upon annealing at $200^{\circ}C$. Upon annealing treatments at $300^{\circ}C\;and\;400^{\circ}C$, a crystalline phase of CoTi formed at the Co/Ti interface. The sheet resistance of Co/Ti multilayer thin film increased by the formation of the amorphous phase at the Co/Ti interface, which decreased by the formation of new crystalline compound CoTi.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.175-175
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• 2000

Si(100) surfaces were exposed to gas-phase thermal-energy hydrogen atoms, H(g). We find that thermal H(g) atoms etch, amorphize, or penetrate into the crystalline silicon substrate, depending on the employed Ts range during the H(g) exposure. We find that etching is enhanced as Ts is lowered in the 300-700K range, while amorphous silicon hydride (a-Si:H) formation dominates at a Ts below 300K. This result was well explained by the fact that formation of the etching precursor, SiHx(a), and amorphization are both facilitated by a lower Ts, whereas the final step for etching, SiH3(a) + H(g) longrightarrow SiH3(g), is suppressed at a lower Ts. we also find that direct absorption of H(g) by the crystalline bulk of Si(100) substrate occurs within a narrow Ts window of 420-530K. The bulk-absorbed hydrogen evolved out molecularly from Si(100) at a Ts 80-120K higher than that for surface monohydride phase ($\beta$1) in temperature-programmed desorption. This bulk-phase H uptake increased with increasing H(g) exposure without saturation within our experimental limits. Direct absorption of H(g) into the bulk lattice occurs only when the surface is atomically roughened by surface etching. While pre-adsorbed hydrogen atoms on the surface, H(a), were readily abstracted and replaced by D(g), the H atoms previously absorbed in the crystalline bulk were also nearly all depleted, albeit at a much lower rate, by a subsequent D(g) at the peak temperature in TPD from the substrate sequentially treated with H(g) and D(g), together with a gas phase-like H2 Raman frequency of 4160cm-1, will be presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.383-383
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• 2010

Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.

• Korean Journal of Medicinal Crop Science
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• v.26 no.4
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• pp.317-327
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• 2018

Background: The root of Angelica gigas Nakai is used as a traditional herbal medicine in Korea for the treatment of many diseases. However, the poor water solubility of the active components in A. gigas Nakai is a major obstacle to its bioavailability. Methods and Results: This work aimed at enhancing the solubility of the active compounds of A. gigas Nakai by a chemical (using a surfactant) and physical (hot melt extrusion, HME) crosslinking method. Fourier transform infrared spectroscopy revealed multiple peaks in the case of the extrudate solids, attributable to new functional groups including carboxylic acid, alkynes, and benzene derivatives. Differential scanning calorimetry analysis showed that the extrudate soilid had a lower glass transition temperature ($T_g$) and enthalpy (${\Delta}H$) ($T_g:43^{\circ}C$, ${\Delta}H$ : < 6 J/g) as compared to the non-extrudate ($T_g:68.5^{\circ}C$, ${\Delta}H:123.2$) formulations. X-ray powder diffraction analysis revealed the amorphization of crystalline materials in the extrudate solid. In addition, enhanced solubility (53%), nanonization (403 nm), and a higher amount of extracted phenolic compounds were achieved in the extrudate solid than in the non-extrudate (solubility : 36%, nanonization : 1,499 nm) formulation. Among the different extrudates, acetic acid and span 80 mediated formulations showed superior extractions efficiency. Conclusions: HME successfully enhanced the production of amorphous nano dispersions of phenolic compound including decursin from extrudate solid formulations.

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.715-720
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• 2000

By the mechanical alloying method. Ni-WC composite materials were prepared to improve the deformation-resistance for creep and sintering of Ni-anode at the operating temperature of $650^{\circ}C$. Mechanically alloyed powder w was initially fabricated by ball milling for 80hr, and then amorphization was occurred by the destruction of ordered crystals based on XRD analysis. In order to investigate the electrochemical performance and sheet characteristics of Ni-WC anode, tape casting process was adopted. Finally, the obtained sheet thickness of Ni- we after sintering at $1180^{\circ}C$ for 60 minutes in $H_2$ atmosphere was O.9mm and the average pore size was $3~5{\mu\textrm{m}}$ with porosities of 55%. The second phase was not observed in Ni- W matrix while W particles were finely and uniformly distributed in Ni matrix. This fine and uniform distributed W particles in Ni matrix are expected to enhance the mechanical properties of Ni anode through the dispersion and solid solution hardening mechanisms.

• Journal of the Korean institute of surface engineering
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• v.36 no.4
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• pp.296-300
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• 2003

Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.16-22
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• 2002

This paper suggests the optimum processing conditions for obtaining good quality $P^{+}$-n shallow junctions formed by pre-amorphization and furnace annealing(FA) to reflow BPSG(bore phosphosilicate glass). $BF_2$ions, the p-type dopant, were implanted with the energy of 20keV and the dose of 2$\times$10$^{15}$ cm$^{-2}$ into the substrates pre-amorphized by As or Ge ions with 45keV, 3$\times$$10^{14}$ $cm^{-2}$. High temperature annealings were performed with a furnace and a rapid thermal annealer. The temperature range of RTA was 950~$1050^{\circ}C$, and the furnace annealing was employed for BPSG reflow with the temperature of $850^{\circ}C$ for 40 minutes. To characterize the formed junctions, junction depth, sheet resistance and diode leakage current were measured. Considering the preamorphization species, Ge ion exhibited better results than As ion. Samples preamorphized with Ge ion and annealed with $1000^{\circ}C$ RTA showed the most excellent characteristics. When FA was included, Ge preamorphization with $1050^{\circ}C$ RTA plus FA showed the lowest product of sheet resistance and junction depth and exhibited the lowest leakage currents.

• Korean Journal of Mineralogy and Petrology
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• v.33 no.1
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• pp.29-39
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• 2020

A series of struvite (MgNH₄PO₄·6H₂O) was synthesized and dried at various temperatures (15-60℃). Crystallization of struvite and its structural properties were significantly influenced by synthetic and drying temperature. Struvite was favorably formed at synthetic temperatures ≤30℃ with an inverse relationship between the crystallinity and synthetic temperature. The crystallinity of struvite was also significantly reduced by an increase in drying temperature from 45℃ to 60℃ due to the loss of structural water molecules and ammonium ions by the facilitated thermal decomposition. However, struvite formed at lower synthetic temperature showed higher crystallinity, and its amorphization by thermal decomposition was inhibited. These results demonstrate that struvite formed at low temperature with an stable condition thermodynamically through favorable crystallization shows high crystallinity and stability with respect to the structural and thermal resistance.

• Journal of the Mineralogical Society of Korea
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• v.29 no.3
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• pp.131-139
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• 2016

Detailed knowledge on maskelynite, a glassy phase of plagioclase found in shocked meteorites and impact craters, is essential to understand a shock metamorphism. Here, we explore an inhomogeneous shock metamorphism in the lunar meteorite Mount DeWitt (DEW) 12007 with an aim to understand the formation mechanism of maskelynite. Most plagioclase grains in the DEW 12007 partially amorphized into maskelynite with a unidirectional orientation. Back-scattered electron (BSE) images of maskelynite show a remnant of planar deformation fracture possibly indicating that the maskelynite would be formed by solid-state transformation(i.e., diaplectic glass). Plagioclase with flow texture is also observed along the rim of maskelynite, which would be a result of recrystallization of melted plagioclase. Results of Raman experiments suggest that shock pressure for plagioclase and maskelynite in the DEW 12007 is approximately 5-32 GPa and 26-45 GPa, respectively. The difference in shock pressures between plagioclase and maskelynite can be originated from 1) external factors such as inhomogeneous shock pressure and/or 2) internal factors such as chemical composition and porosity of rock. Unfortunately, Raman spectroscopy has a limitation in revealing the detailed atomic structure of maskelynite such as development of six- or five-coordinated aluminum atom upon various shock pressure. Further studies using nuclear magnetic resonance spectroscopy are necessary to understand the formation mechanism of maskelynite under high pressure.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.913-920
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• 1995

RFe$_2$(R=rare earth) Laves Phase intermetallic compounds are one of the promising materials for magnetostrictive applications, due to large magnetostriction coefficients in the order of 10$^{-3}$ . However, because RFe$_2$intermetallic compounds have large magnetostriction constants as well as large magnetocrystalline anisotropy constants, a large external magnetic field is necessary to reach saturation magnetostriction. Hence researches on giant magnetostriction have been concentrated on producing materials exhibiting a high value of magnetostriction in a low magentic field. The main research trend of the giant magnetostriction to obtain the large value in the low magnetic filed, fortunately as the signs of magnetocrystalline anisotropy constans in RFe$_2$intermetallic compounds alternate with the rare earth metals, has been to substitute the rare earth metal for others and hence to reduce the magnetocrystalline anisotropy energy. In addition, amorphous RFe$_2$alloys have been researched. In this research, both of the methods which are substitution of the rare earth metal and amorphization in RFe$_2$ intermetallic compounds are simultaneously conducted to obtain the large magnetostriction coefficient in the low external magnetic field. Among them, SmFe$_2$and PrFe$_2$are selected, and amorphized in substrate-free bulk state. Magnetism in amorphous bulk (Sm$_{1-x}$ Pr$_{x}$) Fe$_2$alloys is investigated in the low magnetic field.ld.