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Characteristics of Shallow $P^{+}$-n Junctions Including the FA Process after RTA  

Han, Myeong-Seok (Dept.of Computer Electronics Electric, Daecheon College)
Kim, Jae-Yeong (School of Electro., Telecomm. and Computer Eng., Hankuk Aviation Uvi.)
Lee, Chung-Geun (School of Electro., Telecomm. and Computer Eng., Hankuk Aviation Uvi.)
Hong, Sin-Nam (School of Electro., Telecomm. and Computer Eng., Hankuk Aviation Uvi.)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.39, no.5, 2002 , pp. 16-22 More about this Journal
Abstract
This paper suggests the optimum processing conditions for obtaining good quality $P^{+}$-n shallow junctions formed by pre-amorphization and furnace annealing(FA) to reflow BPSG(bore phosphosilicate glass). $BF_2$ions, the p-type dopant, were implanted with the energy of 20keV and the dose of 2$\times$10$^{15}$ cm$^{-2}$ into the substrates pre-amorphized by As or Ge ions with 45keV, 3$\times$$10^{14}$ $cm^{-2}$. High temperature annealings were performed with a furnace and a rapid thermal annealer. The temperature range of RTA was 950~$1050^{\circ}C$, and the furnace annealing was employed for BPSG reflow with the temperature of $850^{\circ}C$ for 40 minutes. To characterize the formed junctions, junction depth, sheet resistance and diode leakage current were measured. Considering the preamorphization species, Ge ion exhibited better results than As ion. Samples preamorphized with Ge ion and annealed with $1000^{\circ}C$ RTA showed the most excellent characteristics. When FA was included, Ge preamorphization with $1050^{\circ}C$ RTA plus FA showed the lowest product of sheet resistance and junction depth and exhibited the lowest leakage currents.
Keywords
이온주입;선비정질화;박막접합;확산;
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