• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2230-2236
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• 2012

Currently, the AC-to-DC power conversion system using diode rectifiers is mainly used in large vessels. Also, to reduce the total harmonic distortion(THD) of current and voltage, this system requires an additional phase-shifting transformer which can be powered multi-pulses. In this case, due to the installation of the transformer, the spatial or economic loss occurs. This paper presents a novel active rectification scheme using silicon controlled rectifier(SCR) or insulated gate bipolar transistor(IGBT) devices on behalf of the diode rectifiers which are currently operating in large vessels such as LNG Carrier(LNGC). The proposed system can use the low voltage source and reduce current and voltage harmonics generated by nonlinear loads connected to the power distribution bus and save economic costs by removing the phase-shifting transformers which are used in conventional system. Computer simulations are performed under the electric propulsion system which is operating in current large vessel. The results are shown in support of the improvement of THD included in the current and voltage wave forms of propulsion motor.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.12
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• pp.1935-1944
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• 1993

We calculate the optimum refractive index and thickness for a single layer antireflection coating as a function of active layer thickness of a laser diode using three different simplified numerical methods. The difference of the results using three methods comes from that of the effective refractive index of a laser used in three methods. We compare three simplified methods to an exact method to check the validity of the simplified methods. We conclude that the simplified method, choosing the effective index of a laser diode as a function of incidence angle of each plane wave composing of a guided mode agree well to an exact method for both TE and TM modes and the cases of strongly and weakly guiding.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1125-1128
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• 2002

Tantalum pentoxide (Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal diode in switching devices for active-matrix liquid-crystal displays. The MIM diode with very low threshold voltage and perfect symmetry was fabricated. High quality Ta$_2$O$\sub$5/ thin films were obtained by using an anodizing method. Rutherford backscattering spectroscopy, transmission electron microscope observations, auger electron spectroscopy, ellipsometry measurements, and electrical measurements, such as current - voltage(I-V) measurements were performed to investigate Ta$_2$O$\sub$5/ films and their reliability and indicated that the obtained TaOx thin films were reliable Ta$_2$O$\sub$5/ films for the applications. Furthermore, in this paper, we discuss the effects of top-electrode metals and annealing conditions. The conduction mechanism of the leakage current and the symmetry characteristics related to the Schottky emission and Poole-Frankel effect are also discussed using the results of electrical measurements and conduction barrier theory.

• Journal of Sensor Science and Technology
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• v.17 no.1
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• pp.41-52
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• 2008

In this paper, a circuit analysis of the complementary CMOS active pixel and readout circuit is carried out. Complementary pixel structure which is different from conventional 3TR APS structure is consist of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Photo diode is modelled with Medici device program. HSPICE was used to analyze the variation of the signal feature depending on light intensity using $0.5{\mu}M$ standard CMOS process. Simulation results show that the output signal range is from 0.8 V to 4.5 V. This signal range increased 135 % output dynamic range compared to conventional 3TR pixel in the condition of 5 V power supply.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.4
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• pp.718-723
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• 2006

Optical module plays an important role in the construction of high speed communication network. Laser diode is a component of optical module, and its characteristics are dependent of temperature, so many researches are reported. In this paper, we proposed the electrical equivalent circuit of PBH-LD based on the rate equations. And, the two leakage paths exit outside the active region. One path is converted pn-diode and the other path is converted two transistors using npn-Tr and pnp-Tr. In order to reduce the leakage currents, we observed the dependence of carrier concentrations of current blocking layers using PSPICE simulator.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.131-138
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• 2011

We fabricated distributed feedback InGaAsP/InP laser diodes for optical fiber communication module and characterized the lasing properties in continuous wave operation. The active layer of 7-period InGaAsP(1.127 eV)/InGaAsP(0.954 eV) multi-quantum well structure was grown by the metal-organic chemical vapor deposition. The grating for waveguide was also fabricated by the implementation of the Mach-Zehender holographic method of two laser beams interference of He- Cd laser and the fabricated laser diode has the dimension of the laser length of $400{\mu}m$ and the ridge width of $1.2{\mu}m$. The laser diode shows the threshold current of 3.59 mA, the threshold voltage of 1.059 V. For the room-temperature operation with the current of 13.54 mA and the voltage of 1.12 V, the peak wavelength is about 1309.70 nm and optical power is 13.254 mW.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.3
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• pp.304-309
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• 1999

In this paper, a new 24longleftarrowpulse diode rectifier system based upon the conventional series-connected 12-pulse rectifier is p proposed with the least number of switching devices and low VA rating of the additional passive components. The p proposed approach does not employ any active switching devices. Therefore, the system is rugged and simple to i implement. Detailed analysis with VA rating calculation of the components is presented and experimental results from a a 220V, 3kV A rectifier system verify the proposed concept.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1356-1361
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• 2018

Replacing conventional Si diodes with SiC diodes in Si insulated gate bipolar transistor (IGBT) modules is advantageous as it can reduce power losses significantly. Also, the fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present conventional Si diodes cannot do. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. These substrates are built for two voltage ratings, 1.7 kV and 3.3 kV. Comparisons of the 1.7 kV and the 3.3 kV Si-IGBT/Si-diode substrates (Si substrates) at room temperature ($20^{\circ}C$, RT) and high temperature ($H125^{\circ}C$, HT) have shown that the switching losses in hybrid SiC substrates are miniscule as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the current waveforms. Also, the effect of design variations on the electrical performance of 1.7 kV, 50 A diodes is reported here. These variations are made in the active and termination regions of the device.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.161-165
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• 2023

This paper designed a voltage feedback driving circuit to compensate for the characteristic deviation of the Active Matrix Organic Light Emitting Diode driving Thin Film Transistor. This paper describes a stable and fast circuit by applying charge sharing and polar stabilization methods. A 12-inch Organic Light Emitting Diode with a Double Wide Ultra eXtended Graphics Array resolution creates a screen distortion problem for line parasitism, and charge sharing and polar stabilization structures were applied to solve the problem. By applying Charge Sharing, all data lines are shorted at the same time and quickly positioned as the average voltage to advance the compensated change time of the gate voltage in the next operation period. A buffer circuit and a current pass circuit were added to lower the Amplifier resistance connected to the line as a polar stabilization method. The advantage of suppressing the Ringing of the driving Thin Film Transistor can be obtained by increasing the stability. As a result, a circuit was designed to supply a stable current to the Organic Light Emitting Diode even if the characteristic deviation of the driving Thin Film Transistor occurs.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.1033-1036
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• 2002

This paper introduces a control method of series active power filter that compensate harmonic currents and eliminate a neutral line current in 3 phase 3 wire and 3 phase 4 wire power system with harmonic voltage source. These harmonic currents and neutral line current are caused by a nonlinear loads such as diode rectifiers and thyristor converters. Proposed methode extracts a voltage reference directly from performance function without phase transformation. Therefore, the control method is simpler than any other conventional methods. Experimental results for 3-phase 3-wire and 3-phase 4-wire series active power filter system were shown to verify the effectiveness of this control method.