• The Korean Journal of Ceramics
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• 제4권3호
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• pp.260-267
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• 1998

A homogeneous and stoichimetric fine powder of the ferroelectric $Pb_[0.97}La_{0.02}(Zr_{0.64}Sn_{0.25}Ti_{0.11})O_3$ (PLZST) has been prepared by the hydroxide coprecipitation method. Studies on the crystallization behavior of precursor as a function of temperature by X-ray powder diffraction and transmission electron microscopy technique were consistent with the formation of the pyrochlore phase from amorphous, initially at low temperatures around 500~$550^{\circ}C$. Further heat treatment up to $750^{\circ}C$ resulted in development of the perovskite phase with no significant pyrochlore crystallite growth. At intermediate temperatures the precursor yields a fine mixture of pyrochlore and perovskite phases. When the pyrochlore phase was heat teated in air, slight weight increase was observed in the temperature range of 300~$700^{\circ}C$, which is thought to be caused from oxygen absorption. In argon atmosphere, weight increase was not observed. On the other hand, weight loss began to occur near $700^{\circ}C$, with giving off mostly CO2 gas. This implies that the pyrochlore phase seems to be crystallorgraphycally and thermodynamically metastable. An apparent activation energy of 53.9 ㎉/mol was estimated for the pyrochlore-perovskite phase transformation.

• 대한전자공학회논문지SD
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• 제37권12호
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• pp.29-34
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• 2000

금속유도 측면 결정화에 의해 제작된 다결정 실리콘 박막 트랜지스터(Thin Film Transistor; TFT)의 전기적 스트레스의 효과에 대해 연구하였다. MILC로 제작된 TFT에 전기적 스트레스가 인가될 때, off-state 전류가 100배에서 10000배까지 감소한다. 그러나 전기적 스트레스를 인가한 소자를 관상로에서 열처리를 할 경우 열처리온도가 증가할 수록 off-state 전류가 다시 증가했다. 열처리온도에 따른 off-state 전류의 의존성으로부터 MILC 다결정 실리콘 박막내 트랩준위의 활성화에너지(0.34eV)를 얻어냈다.

• 대한금속재료학회지
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• 제49권4호
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• pp.298-303
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• 2011

Mg-23.5 wt%Ni-xwt%Cu (x = 2.5, 5 and 7.5) samples for hydrogen storage were prepared by melt spinning and crystallization heat treatment from a Mg-23.5 wt%Ni-5 wt%Cu alloy synthesized by the gravity casting method. They were then ground under $H_2$ to obtain a fine powder. Among these samples the Mg-23.5Ni-2.5Cu sample had the highest hydriding and dehydriding rates after activation. The Mg-23.5Ni-2.5Cu sample absorbed 3.59 and 4.01 wt%H for 10 and 60 min, respectively, at 573K under 12 bar $H_{2}$. The activated 88(87.5Mg-10Ni-2.5Cu)-$5Nb_{2}O_{5}-7NbF_{5}$ sample absorbed 2.93 wt%H for 10 min, and 3.14 wt%H for 60 min at 573K under 12 bar $H_{2}$.

• 마이크로전자및패키징학회지
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• 제12권2호
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• pp.141-147
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• 2005

나노재료 $TiO_2-SiO_2$는 2-prOH(2-propanol)를 용매로 사용하여 가수분해와 축합반응으로 제조하였고, FT-IR, DSC, XRD, FE-SEM을 사용하여 $TiO_2-SiO_2$의 특성을 조사하였다. FT-IR분석으로부터 Ti-0-Si의 흡수피크에 대해 설명하였으며, DSC분석 결과를 Ozawa 방정식에 적용하여, 결정화에 필요한 활성화 에너지를 계산하였다. 결정학적 특징은 XRD를 이용하여 하소 온도의 변화에 따른 시료의 회절패턴과 반가폭의 변화 등에 관련하여 설명하였다. FE-SEM을 통하여 Ti mol$\%$가 증가할수록 입자크기가 커지는 것을 확인 할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• 한국결정성장학회지
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• 제2권2호
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• pp.20-32
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• 1992

$Na_2O-CaO-MgO-Al_2O_3-SiO_2$계를 기본조성으로 하여 $Na_2O$에 $Li_2O 0.05wt%, $K_2O$를, CaO에 MgO 12.0wt%, ZnO 6.0%를 각각 치환하여 조성을 선정하였다. 기본 유리조성의 결정상은 wollastonite이고, 치환된 조성들은 diopside, diopside.tremolite의 혼정이 나타났다. $Na_2O$를 $Li_2O$로 치환한 시편은 열팽창계수가 감소하였지만 CaO를 ZnO로 치환한 시편은 열팽창 계수가 증가하였다. 곡강도에 있어서는 치환에 따라 모두 증가시켰다. 핵행성제로 $ZrO_2와 $CaF_2$를 각각 1~2wt%의 변화를 시켜본 결과 핵형성제 $ZnO_2$와 $CaF_2$가 1:1, 1:2인 시편은 $1000~1050^{\circ}C$온도에서 급격한 결정성장을 보였으며 1:2시편이 가장 낮은 열팽창 계수값을 나타냈다. 곡강도는 모두 $1000~1050^{\circ}C$의 결정화 온도 범위에서 높은 강도를 나타내었다. 결정화에 필요한 활성화 에너지는 Ozawa와 Kissinger식으로 plot하여 각각 55.24kcal/mol과 53.05kcal/mol이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.48-48
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• 2007

P-type transparent conducting $CuGaO_2$ thin films have been prepared by DC/RF sputtering using Quartz(0001) and sapphire(0001) substrates. The target was fabricated by heating a stoichiometric mixture of CuO and $Ga_2O_3$ at 1373K for 12h under $N_2$ atmosphere. The film were deposited under mixture gas of Ar and $O_2(Ar:O_2=4:1)$ during 10~30min. and the as-deposited films were annealed at 1123K and $N_2$ atmosphere. Room temperature conductivity and the activation energy of the sintered body in the temperature range of 223K ~ 423K were 0 004S/cm, 1.9eV, respectively. XRD revealed that all of the as-deposited films were amorphous. Heating of the films deposited on Quartz substrates above 1123K resulted in crystallization with a second phase of $CuSiO_3$, which was assumed owing to reaction with Quartz substrate. The single phase of $CuGaO_2$ was obtained at the film deposited on the sapphire substrates. The transmittance after annealing of DC- and RF-sputtered films were 55~75% at 550nm. From the transmittance and reflectance measurement. the direct band gap of the DC/RF-sputtered films were 3.63eV and 3.57eV. and there was little difference between DC and RF sputtered films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.263-263
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• 2013

This work examines the dynamic properties of ice surfaces in vacuum for the temperature range of 140~180 K, which extends over the onset temperatures for ice sublimation and the phase transition from amorphous to crystallization ice. In particular, the study focuses on the transport processes of excess protons and chloride ions in ice and their segregative behavior to the ice surface. These phenomena were studied by conducting experiments with a relatively thick (~100 BL) ice film constructed with a bottom $H_2O$ layer and an upper $D_2O$ layer, with excess hydronium and chloride ions trapped at the $H_2O$/$D_2O$ interface as they were generated by the ionization of hydrogen chloride. The migration of protons, chloride ions, and water molecules to the ice film surface and their H/D exchange reactions were measured as a function of temperature using the methods of low energy sputtering (LES) and Cs+ reactive ion scattering (RIS). Temperature programmed desorption (TPD) experiments monitored the desorption of water and hydrogen chloride from the surface. Our observations indicated that both hydronium and chloride ions migrated from the interfacial layer to segregate to the surface at high temperature. Hydrogen chloride gas desorbs via recombination reaction of hydronium and chloride ions floating on the surface. Surface segregation of these species is driven by thermodynamic potential gradient present near the ice surface, whereas in the bulk, their transport is facilitated by thermal diffusion process. The finding suggests that chlorine activation reactions of hydrogen chloride for polar stratospheric ice particles occur at the surface of ice within a depth of at most a few molecular layers, rather than in the bulk phase.

• 센서학회지
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• 제7권4호
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• pp.234-242
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• 1998

Czochralski 방법을 사용하여 격자결함이 적은 CsI 단결정 섬광체를 육성하기 위한 최적육성조건을 구하기 위하여 광투과율의 변화와 열형광특성을 이용하였다. 결정화과정을 반복할수록 불필요한 불순물 분포와 열형광강도 및 glow 피이크의 수가 감소하였다. 결정성장방향은 (110)이었고, 육성한 CsI의 결정구조는 체심입방체이었다. 그리고 격자상수는 $4.568{\AA}$ 임을 확인할 수 있었다. CsI:3rd의 활성화 에너지(trap깊이)는 약 0.45 eV 이었고, 주파수인자는 $5.18{\times}10^5\;sec^{-1}$이었다.

• 공업화학
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• 제28권2호
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• pp.214-220
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• 2017

결정화/응집(drowning-out/agglomeration, D/A) 공정을 이용하여 평균 입도 $550{\mu}m$인 구형 Al/RDX/AP 에너지 복합체를 제조하였다. SEM과 X-선 분광분석을 이용해 복합체의 표면 구조와 Al의 분포를 분석하였다. 열분석 결과 D/A 공정에 의해 제조된 Al/RDX/AP 복합체는 물리적 혼합에 의한 복합체와 비교하여 분해 개시 온도가 약 $50^{\circ}C$ 정도 낮아졌으며, 동시에 활성화 에너지의 증가에 의해 열적 안정성도 상승하는 것으로 확인되었다. AP의 1차 분해 구간에서는 물리적 혼합과 D/A 공정에 의한 복합체 모두 Prout-Tompkins 모델에 의해 잘 모사되었다. 그러나 AP의 2차 분해 구간에서는 물리적 혼합에 의해 제조된 복합체는 zero-order 모델로 해석되는 반면, D/A 공정에 의해 제조된 복합체는 contracting volume 모델로 해석됨을 알 수 있었다.