• Advances in nano research
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• 제1권2호
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• pp.93-103
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• 2013

An ultrasonic-mediated assisted stepwise method has been developed for depositing transparent ZnO films from aqueous solution. Rinsing in low ethylene glycol temperature was easy to produce intermediate phase of $Zn(OH)_2$, rinsing in $120^{\circ}C$ ethylene glycol was observed the diffraction peak of intermediate $Zn(OH)_2$ in early report, the rinsing temperature plays an important role in the process of $Zn(OH)_2$ phase transformed to ZnO, high rinsing temperature actually improved the intermediate phase. However, the effect of rinsing on the intermediate phase is yet to be understood clearly. The effect of different rinsing procedures, involving either of or a combination of successive ionic layer adsorption and reaction (SILAR) and ultrasonic-assisted rinsing, prior to hydrolysis in ethylene glycol was found to improve the occurrence $Zn(OH)_2$ in ZnO thin films. In the zinc complex ($[Zn(NH_3)_4]^{2+}$) solution, excess ($[Zn(NH_3)_4]^{2+}$) absorbed in glass substrate transformed incompletely to ZnO and exist as $Zn(OH)_2$ phase in thin films. In films deposited at low temperature, rinsing procedure is applied to improve excess $Zn(OH)_2$ and obtain smoother transparent thin films.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.819-824
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• 1996

We have investigated the temperature dependence of CO gas sensitivity for ZnO and ZnO-CuO thick films at 200 ppm CO gas, where those films were prepared by thermal transformation. The ZnO thick film shows the maximum sensitivity of -4 at >$300^{\circ}C$ On the other hand, ZnO-CuO(more than 1mol%) thick film shows that the maximum sensitivity reduced to less than 1.5. The decrease in sensitivity of CO gas with increasing the CuO contents is due to the decrease of the oxygen absorption in thick films.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.756-759
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• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The undoped ZnO thin films were grown on $c-Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.600-604
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• 2005

We studied that structural and optical properties of ZnO films depend on oxygen contents. ZnO films were deposited on Si (111) substrates at room temperature by rf sputtering system and the thickness of films was 100 nm. The ZnO films were annealed in thermal furnace for 2 h at 800 and $900^{\circ}C$ in $H_2O,\;N_2$, and air ambient gases to control oxygen contents. We used AES, PL, XRD, AFM. As our result, crystal quality and luminescence improved until O/Zn is 1. However, when O/Zn ratio Is larger than 1, the structural and optical properties were getting worse.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.336-336
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• 2013

Zinc oxide (ZnO) based transparent oxide semiconductors have been studied due to their high transmittance and electrical conductivity. Pure ZnO have unstable optical and electrical properties at high temperatures but doped ZnO thin films can have stable optical and electrical properties. In this paper, transparent oxide semiconductors of Y-doped ZnO thin films prepared by sol-gel method. The ionic radius of $Y^{3+}$ (0.90 A) is close to that of $Zn^{2+}$ (0.74 A), which makes Y suitable dopant for ZnO thin films. The Sn-doped ZnO thin films were deposited onto quartz substrates with different atomic percentages of dopant which were Y/Zn = 0, 1, 2, 3, 4, and 5 at.%. These thin films were pre-heated at $150^{\circ}C$ for 10 min and then annealed at $500^{\circ}C$ or 1 h. The structural and optical properties of the Y-doped ZnO thin films were investigated using field-emission scanning electronmicroscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL).

• Advances in nano research
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• 제5권3호
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• pp.193-201
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• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

• 센서학회지
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• 제15권2호
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• pp.84-89
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• 2006

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.

• 한국결정학회지
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• 제7권2호
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• pp.175-182
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• 1996

ZnO 박막의 증착 거동에 대한 기본 실험을 하기 위하여 우선 코닝 7050 유리 기판을 사용하여 증착 변수에 따른 박막의 성장특성을 규명하였다. 산소가스의 영향을 보면, ZnO 박막의 산소를 주입시키지 않은 경우에는 배향성을 갖지 못하고 있으며, 일정양의 산소가 있어야 (002) 배향성을 가진 ZnO 박막이 증착되고 있음을 알 수 있었다. 또한 실험결과에 의하면 rf 전력과 기판온도에 따라서 ZnO 박막의 결정성 및 성장면의 큰 변화가 관찰되고 있는데, 이들 변수의 크기가 증가할수록 SAW소자에 적합한 양질의 배향성 박막을 얻을 수 있었다. 실험에서 얻은 최적조선은 rf 전력 300W, 기판온도 300℃, Ar/O2=50/50 이다. SAW 특성을 분석하기 위하여 diamond/Si 기판위에 Al 박막을 증착시킨 후 자체 제작한 마스크를 이용하여 건식 식각법에 의한 IDT 제작을 시도하였다. 그 다음 위의 최적 조건에서 ZnO 박막을 증착하고 탄성표면파 특성을 분석하였다. 측정에 사용한 디자인은 λ(파장)는 24μm으로서 측정결과 simulation 값과 실험치가 잘 일치하고 있었다. 측정된 중심주파수는 250MHz이고, 이로부터 계산한 ZnO/diamond 구조의 전단 속도는 약 6000m/s의 값을 나타냈으며, 이 값은 실제 이론치와 거의 일치하고 있었다.

• 한국결정성장학회지
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• 제14권6호
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• pp.277-280
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• 2004

p형 ZnO 에피 박막을 사파이어 기판의 (0001)면 상에 RF-DC magnet co-sputtering 법으로 성장시켰다. 약 120nm두께의 단결정상 박막을 성공적으로 얻어내었다. p형 ZnO를 만들기 위해서 Al 금속 타켓을 이용하여 DC 스퍼터링으로 $400^{\circ}C$와 $600^{\circ}C$에서 ZnO를 rf magnetron sputtering으로 증착하고, 동시에 Al의 doping을 행하였으며, 성장된 박막의 결정성과 광특성에 대하여 고찰하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1036-1038
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• 2001

The sapphire orientation dependence of the crystallization of ZnO thin films has been studied using real-time synchrotron x-ray scattering. The amorphous ZnO thin films with a 2400-${\AA}$-thick were grown on sapphire(110) and sapphire(001) substrates by radio frequency magnetron sputtering at room temperature. The amorphous ZnO films were crystallization into epitaxial ZnO(002) grains both on the sapphire(110) and on the sapphire(001) substrates. The epitaxial quality, such as mosaic distribution and crystal domain size, of the ZnO grains on the sapphire(110) is high, similar to that of the ZnO grains on the sapphire(001). With increasing the annealing temperature to 600$^{\circ}C$, the mosaic distribution and the crystal domain size of ZnO(002) grains in the film normal direction was improved and decreased, respectively.