Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Characteristics of As-doped ZnO thin films with various buffer layer temperatures prepared by PLD method

PLD법을 이용한 Buffer Layer 증착온도에 따른 As-doped ZnO 박막의 특성

  • Lee, Hong-Chan (Thin Film Materials Research Center, Korea Institute of Science and Technology) ;
  • Shim, Kwang-Bo (Department of Ceramic Engineering, Hanyang University) ;
  • Oh, Young-Jei (Thin Film Materials Research Center, Korea Institute of Science and Technology)
  • 이홍찬 (한국과학기술연구원 박막재료연구센터) ;
  • 심광보 (한양대학교 세라믹공학과) ;
  • 오영제 (한국과학기술연구원 박막재료연구센터)
  • Published : 2006.03.31
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Abstract

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.

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References

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