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http://dx.doi.org/10.4313/JKEM.2005.18.7.600

Effect of Oxygen Contents in Thermal Annealed ZnO films on Structural and Optical Properties  

Lee, Ju-Young (한국해양대학교 반도체물리)
Kim, Hong-Seung (한국해양대학교 반도체물리)
Jung, Eun-Soo (한국해양대학교 반도체물리)
Jang, Nak-Won (한국해양대학교 전기전자공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.7, 2005 , pp. 600-604 More about this Journal
Abstract
We studied that structural and optical properties of ZnO films depend on oxygen contents. ZnO films were deposited on Si (111) substrates at room temperature by rf sputtering system and the thickness of films was 100 nm. The ZnO films were annealed in thermal furnace for 2 h at 800 and $900^{\circ}C$ in $H_2O,\;N_2$, and air ambient gases to control oxygen contents. We used AES, PL, XRD, AFM. As our result, crystal quality and luminescence improved until O/Zn is 1. However, when O/Zn ratio Is larger than 1, the structural and optical properties were getting worse.
Keywords
Oxygen contents; ZnO; Thermal annealing; AES; XRD; PL;
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