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http://dx.doi.org/10.5369/JSST.2006.15.2.084

Characteristics of As-doped ZnO thin films with various buffer layer temperatures prepared by PLD method  

Lee, Hong-Chan (Thin Film Materials Research Center, Korea Institute of Science and Technology)
Shim, Kwang-Bo (Department of Ceramic Engineering, Hanyang University)
Oh, Young-Jei (Thin Film Materials Research Center, Korea Institute of Science and Technology)
Publication Information
Journal of Sensor Science and Technology / v.15, no.2, 2006 , pp. 84-89 More about this Journal
Abstract
Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.
Keywords
ZnO thin film; buffer layer; pulsed laser deposition; photoluminesence; p-type ZnO;
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