• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.43-46
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• 2017

Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.251-256
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• 2019

In the process of ZnO ceramic sintering at a temperature of 1385℃, higher than the normal sintering temperature, some grains were growth up to mm scale. When sintered at 1400℃ for 8 hours, the size of the grains that are not involved in the abnormal growth is as large as 30~40 ㎛, but the size of the abnormal grown grain reaches 1,000 ㎛, which is more than 10,000 times bigger in volume than the normal one within 8 hr growth. As a cause of rapid and abnormal grain growth, primary particle size distribution, compaction density variation within sample and doping of impurities could be considered. The primary particle size distribution could be considered main reason for abnormal grain growth but no solid evidence was obtained. Through the observation of the microstructure, it is presumed that the giant grains grow absorbing the neighbor grains through a grain rotation process.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.46-47
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• 2006

Ga-doped ZnO nanowires have been synthesized by pulsed laser deposition (PLD) in furnace on gold coated (0001) sapphire substrates. The effect of repetition rate on structural and optical properties of Ga-doped ZnO nanowires are investigated. By controlling repetition rate, the diameter of nanowires is varied between about 60 and 100 nm, and the length of nanowires is varied between about 2 and 4 um. The X-ray diffraction (XRD) reveals the structural defects induced by the Ga doping. The room temperature photoluminescence (PL) spectra of Ga-doped ZnO nanowires show strong UV emission between 382.394 and 385.279 nm with negligible visible emission.

• Journal of Sensor Science and Technology
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• v.19 no.3
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• pp.197-201
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• 2010

This paper describes the fabrication and characteristics of a NO sensor using ZnO thin film integrated 3C-SiC micro heater based on polycrystalline 3C-SiC thin film of operation in harsh environments. The sensitivity, response time, and operating properties in high temperature and voltages of NO sensors based SiC MEMS are measured and analyzed. The sensitivity of device with pure ZnO thin film at the heater operating power of 13.5 mW ($300^{\circ}C$) is 0.875 in NO gas concentration of 0.046 ppm. In the case of Pt doping, the sensitivity of at power consumption of 5.9 mW ($250^{\circ}C$) was 1.92 at same gas flow rate. The ZnO with doped Pt was showed higher sensitivity, lower working temperature and faster adsorption characteristics to NO gas than pure ZnO thin film. The NO gas sensor integrated SiC micro heater is more strength than others in high voltage and temperature environments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.408-411
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure, discharge power and doping amounts of Al on the electrical, optical and morphological properties were investigated experimentally. The effect of bias voltage on the electrical properties of ZnO thin film were also studied. Films with lowest resistivity of $5.4{\times}10^{-4}\;{\Omega}-cm$ have been achieved in case of films deposited at 1mtorr, $400^{\circ}C$ with a substrate bias of +10V for 840nm in film thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.28-28
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• 2008

We have demonstrated the combinatorial synthesis of a variety of transparent conducting oxides using a combinatorial sputter system. The effects of a wide range of Nb or Zn doping rate on the optical and electrical properties of Indium-tin oxides (ITO) films were investigated. The Nb or Zn doped ITO films were fabricated on glass substrates, using combinatorial sputtering system which yields a linear composition spread of Nb or Zn concentration in ITO films in a controlled manner by co-sputtering two targets of ITO and $Nb_2O_5$ or ITO and ZnO. We have examined the work-function, resistivity, and optical properties of the Nb or Zn-doped ITO films. Furthermore, the effects of Hz plasma treatment on the physical properties of Ga or Zn doped ITO films synthesized by combinatorial sputter system were investigated.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.84-91
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• 2008

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.103-105
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• 2015

Effect of silicon doping into ZnSnO systems was investigated using solution process. Addition of silicon was used to suppress oxygen vacancy generation. The transfer characteristics of the device showed threshold voltage shift toward the positive direction with increasing Si content due to the high binding energy of silicon atoms with oxygen. As a result, the carrier concentration was decreased with increasing Si content.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.5.2-5.2
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• 2009

From 10 years ago, the development of nano-devices endeavored to achieve reconstruction of information technology (IT) and nano technology (NT) industry. Among the many materials for the IT and NT industry, zinc oxide (ZnO) is a very promising candidate material for the research of nano-device development. Nano-structures of ZnO-based materials were grown easily via various methods and it attracts huge attention because of their superior electrical and optical properties for optoelectronic devices. Recently, among the various growth methods, MOCVD has attracted considerable attention because it is suitable process with benefits such as large area growth, vertical alignment, and accurate doping for nano-device fabrication. However, ZnO based nanowires grown by MOCVD process were had the principal problems of 1st interfacial layers between substrate and nanowire, 2nd a broad diameter (about 100 nm), and 3rd high density, and 4th critical evaporation temperature of Zinc precursors. In particular, the growth of high performance nanowire for high efficiency nano-devices must be formed at high temperature growth, but zinc precursors were evaporated at high temperature.These problems should be repaired for materialization of ultra high performance quantum devices with quantum effect. For this reason, we firstly proposed the growth method of vertical aligned slim MgZnO nanowires (< 10 nm) without interfacial layers using self-phase separation by introduced Mg at critical evaporation temperature of Zinc precursors ($500^{\circ}C$). Here, the self-phase separation was reported that MgO-rich and the ZnO-rich phases were spontaneously formed by additionally introduced Mg precursors. In the growth of nanowires, the nanowires were only grown on the wurzite single crystal seeds as ZnO-rich phases with relatively low Mg composition (~36 at %). In this study, we investigated the microstructural behaviors of self-phase separation with increasing the Mg fluxes in the growth of MZO NWs, in order to secure drastic control engineering of density,diameter, and shape of nanowires.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.882-889
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• 2011

In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.