Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Structural and optical properties of Ga-doped ZnO nanowires synthesized by pulsed laser deposition in furnace

갈륨 도핑된 ZnO 나노와이어의 합성과 구조적 광학적 특성 분석

  • Kim, Chang-Eun (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Ahn, Byung-Du (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Jean, Kyung-Ah (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Son, Hyo-Jeong (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Gun-Hee (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Lee, Sang-Yeol (Dept. of Electrical and Electronic Engineering, Yonsei University)
  • 김창은 (연세대학교 전기전자공학부) ;
  • 안병두 (연세대학교 전기전자공학부) ;
  • 전경아 (연세대학교 전기전자공학부) ;
  • 손효정 (연세대학교 전기전자공학부) ;
  • 김건희 (연세대학교 전기전자공학부) ;
  • 이상렬 (연세대학교 전기전자공학부)
  • Published : 2006.10.27
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Abstract

Ga-doped ZnO nanowires have been synthesized by pulsed laser deposition (PLD) in furnace on gold coated (0001) sapphire substrates. The effect of repetition rate on structural and optical properties of Ga-doped ZnO nanowires are investigated. By controlling repetition rate, the diameter of nanowires is varied between about 60 and 100 nm, and the length of nanowires is varied between about 2 and 4 um. The X-ray diffraction (XRD) reveals the structural defects induced by the Ga doping. The room temperature photoluminescence (PL) spectra of Ga-doped ZnO nanowires show strong UV emission between 382.394 and 385.279 nm with negligible visible emission.

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