• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.305-309
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• 2012

In this study, ZnO nanorods and $SnO_2$-CuO heterogeneous oxide were grown on membrane-type gas sensor platforms and the sensing characteristics for carbon monoxide (CO) were studied. Diaphragm-type gas sensor platforms with built-in Pt micro-heaters were made using a conventional bulk micromachining method. ZnO nanorods were grown from ZnO seed layers using the hydrothermal method, and the average diameter and length of the nanorods were adjusted by changing the concentration of the precursor. Thereafter, $SnO_2$-CuO heterogeneous oxide thin films were grown from evaporated Sn and Cu thin films. The average diameters of the ZnO nanorods obtained by changing the concentration of the precursor were between 30 and 200 nm and the ZnO nanorods showed a sensitivity value of 21% at a working temperature of $350^{\circ}C$ and a carbon monoxide concentration of 100 ppm. The $SnO_2$-CuO heterogeneous oxide thin films showed a sensitivity value of 18% at a working temperature of $200^{\circ}C$ and a carbon monoxide concentration of 100 ppm.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.367-372
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• 2000

ZnO thin films were deposited on amorphous slide glass and $SiO_2$/Si substrates by Facing Targets Sputtering method with sputtering current 0.1~0.8 A, working pressure 0.5~3 mTorr and substrate temperature R.T~$400^{\circ}C$. When the sputtering current was 0.4 A, working pressure was 0.5 mTorr and substrate temperature was 30$0^{\circ}C$, ${\Delta}{\Theta}_{50}$ value of ZnO/glass and ZnO/$SiO_2$/si thin film was $3.8^{\circ}$ and $2.98^{\circ}$, respectively. In these conditions, we knew that ZnO thin film were deposited with good c-axis orientation on amorphous slide glass by FTS system.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.141-145
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• 2011

ZnO:Al thin films were deposited by RF magnetron sputtering with various base pressure, and their structural, optical, and electrical properties were studied. The influence of the base pressure on the ZnO:Al thin film was confirmed and a high-quality thin film was obtained by controlling the base pressure. In all Al-doped ZnO thin films, the preferred orientation of (002) plane was observed and light transmittance in visible region (400 nm~800 nm) had above 85%. With decreasing of base pressure, crystallinity, resistivity, and figure of merit were improved. The improvement of resistivity with base pressure was attributed to the change of grain size.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.90-93
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• 2013

Al:ZnO thin films were deposited using the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. With the increase in the deposition temperature and the decrease in the radio frequency sputtering power, the crystallinity was increased and the surface roughness was decreased, which lead to the decrease in the electrical resistivity of the film. It is also clearly observed that, the intensity of the (002) XRD peak increases with increasing the substrate temperature [1,2]. The electrical resistivity and optical transmittance of the Al:ZnO thin film were analyzed as a function of the post-annealing temperature. It can be seen that with the annealing temperature set at $400^{\circ}C$, the resistivity decreases to a minimum value of $4.1{\times}10^{-3}{\Omega}cm$ and the transmittance increases to a maximum value of 85% of the Al:ZnO thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.66-69
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• 1989

After reviewing previous work done on two piezoelectric thin films(PZT, ZnO), ZnO thin piezofim of 1-3UM is fabricated by sputtering on the different substrates(i. e., P+Si/N-Si, SiO2/P+Si/ N-Si, Al/SiO2/ P+Si/ N+Si). The result shows that ZnO piezofilm on the Al has the best c-axis orientation. One of applications for the ZnO piezofilm as an microvalve to control liquid flow is introduced, and which can be controlled electrically and remotely.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.39-43
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• 2021

In the case of ZnO:Al thin films, it is the best material that can replace ITO that is mainly used as a transparent electrode in electronic devices such as solar cells and flat-panel displays. In this study, ZnO:Al films were fabricated by using the RF dual magnetron sputtering method at various substrate temperatures. As the substrate temperature increased, the crystallinity of the ZnO:Al thin films was improved, and the electrical conductivity and electrical properties of the thin film improved owing to the increase in grain size. In addition, the surface roughness of the ZnO:Al thin films increased due to changes in the surface and density of the thin films. Moreover, the substrate temperature increased the density of thin films and improved their transmittance. To be applied to solar cells and other several electronic devices in the future, the hardness and adhesion properties of the thin film improve as the substrate temperature increases.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.208-211
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• 2012

In the present study, a ZnO thin film, as a buffer layer of ITO (indium tin oxide) film was deposited on glass substrates by RF magnetron sputtering at low temperature of $150^{\circ}C$. In order to estimate the optical characteristics and compare with the experimental results in Glass/ZnO(100 nm)/ITO(35 nm) multilayered film, the simulation program, EMP (Essential Macleod Program) was adopted. The sheet resistance and optical transmittance of the films were measured using the four-point probe method and spectrophotometer, respectively. From X-ray diffraction patterns, all the films deposited at $150^{\circ}C$ demonstrated only the amorphous phase. Optical transmittance was the highest at a ZnO thickness of 100 nm. The ITO(35 nm)/ZnO(100 nm) film exhibits an optical transmittance of >92% at 550 nm. The multilayered film showed an electrical sheet resistance of 407 ${\Omega}/sq.$, which is significantly better than that of a single-layer ITO film without a ZnO buffer layer (815 ${\Omega}/sq.$).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.373-373
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• 2012

We fabricated conductive zinc oxide (ZnO) thin film at low temperature by UV-enhanced atomic layer deposition. The atomic layer deposition relies on alternate pulsing of the precursor gases onto the substrate surface and subsequent chemisorption of the precursors. In this experiment, diethylzinc (DEZ) and $H_2O$ were used as precursors with UV light. The UV light was very effective to improve the conductivity of the ZnO thin film. The thickness, transparency and resistivity were investigated by ellisometry, UV-visible spectroscopy and Four-point probe.

• Journal of IKEEE
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• v.23 no.2
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• pp.375-379
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• 2019

$ZnO-SnO_2(ZTO)$ was deposited by RF magnetron sputtering using a ceramic target whose Zn atomic ratio to Sn is 2:1 as a target, and the crystal structure variation with thermal treats was investigated. Transparent thin film transistors (TTFT) were fabricated using the ZTO films as active layers. About 100 nm-thick $Si_3N_4$ film grown on 100 nm-thick $SiO_2$ film was adopted as gate dielectrics. The mobility, threshold voltage, $I_{on}/I_{off}$, and interface trap density were obtained from the transfer characteristics of ZTO TTFTs. The effects of substrate temperature, and post-annealing on the property variation of ZTO TTFT were analyzed.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.119-125
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• 2013

In this study, we studied the properties of ZnO(Al) and ZnO(AlGa) thin film according to film thickness deposited on SLG by In-line magnetron sputtering system. XRD, FESEM, 4-point probe, Hall measurement system and UV/Vis-NIR spectrophotometer were employed to analyze the properties of ZnO(Al) and ZnO(AlGa) thin film. The all films exhibited (002) preferential orientation with clear peak shape and high intensity. The carrier concentration and Hall mobility of ZnO(Al) and ZnO(AlGa) thin film were improved with increasing thickness. The resistivity of both films decreased when the film thickness was raised from 500 nm to 1,450 nm. And then relatively the resistivity of ZnO(AlGa) film was lower than that of ZnO(Al) film. The transmittance of the films decreased with increasing film thickness but all films exhibited optical transmittances of over 83.3% in the visible region.