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http://dx.doi.org/10.5757/JKVS.2011.20.2.141

Properties of ZnO:Al Thin Films Deposited by RF Magnetron Sputtering with Various Base Pressure  

Kim, D.K. (School of Electronics Engineering, Chungbuk National University)
Kim, H.B. (Division of Electronics and Information Engineering, Cheongju University)
Publication Information
Journal of the Korean Vacuum Society / v.20, no.2, 2011 , pp. 141-145 More about this Journal
Abstract
ZnO:Al thin films were deposited by RF magnetron sputtering with various base pressure, and their structural, optical, and electrical properties were studied. The influence of the base pressure on the ZnO:Al thin film was confirmed and a high-quality thin film was obtained by controlling the base pressure. In all Al-doped ZnO thin films, the preferred orientation of (002) plane was observed and light transmittance in visible region (400 nm~800 nm) had above 85%. With decreasing of base pressure, crystallinity, resistivity, and figure of merit were improved. The improvement of resistivity with base pressure was attributed to the change of grain size.
Keywords
ZnO:Al; Transparent conducting oxide; RF magnetron sputtering; Base pressure; Glass substrate;
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