Transactions on Electrical and Electronic Materials

  • 제14권2호
  • /
  • Pages.90-93
  • /
  • 2013
  • /
  • 1229-7607(pISSN)
  • /
  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

A Study on Properties of Al:ZnO Thin Films by Used RTP Method

  • 투고 : 2012.07.23
  • 심사 : 2013.02.25
  • 발행 : 2013.04.25
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Al:ZnO thin films were deposited using the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. With the increase in the deposition temperature and the decrease in the radio frequency sputtering power, the crystallinity was increased and the surface roughness was decreased, which lead to the decrease in the electrical resistivity of the film. It is also clearly observed that, the intensity of the (002) XRD peak increases with increasing the substrate temperature [1,2]. The electrical resistivity and optical transmittance of the Al:ZnO thin film were analyzed as a function of the post-annealing temperature. It can be seen that with the annealing temperature set at $400^{\circ}C$, the resistivity decreases to a minimum value of $4.1{\times}10^{-3}{\Omega}cm$ and the transmittance increases to a maximum value of 85% of the Al:ZnO thin film.

키워드

참고문헌

  1. D. Song, "Effects of RF power on surface morphological, structural and electrical properties of aluminium-doped zinc oxide filmsby magnetron sputtering", applied surface science, Vol. 254, No. 1, p. 4171, 2008S. https://doi.org/10.1016/j.apsusc.2007.12.061
  2. D. J. Kwak, M. W. Park, and Y. M. Sung, "Discharge power dependence of structural and electrical properties of Al-doped ZnO conducting film by magnetron sputtering", to be published in Vacuum p. 1, 2008.
  3. S. S Lin, J. L. Huang, and D. F. Lii, "The effects of r.f. power and substrate temperature on the properties of the films:, surface and Cating Technology, Vol. 176, p. 173, 2004. https://doi.org/10.1016/S0257-8972(03)00665-0
  4. Elias Burstein, Anomalous Optical Absorption Limit in InSb, Physical Review, Vol. 93, Issue 3, p. 632-633, 1954 [DOI: http://dx.doi.org/10.1103/PhysRev.93.632].
  5. D. Song etal Applied Surface Science 195(2002) 291. https://doi.org/10.1016/S0169-4332(02)00611-6
  6. H. Kim, J. S. Horwitz, S.B. Qadri, D. B. Chrisey," Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition" Thin Soild Film, Vol. 420-421, p. 107-111 (2002) [DOI: http:// dx.doi.org/10.1016/S0040-6090(02)00658-2].
  7. K. L. Chopra, S. Major, D. K Pandya, "Transparent conductors- A status review" Thin Solid Films 102, Issue 1, p. 1-46 (1983) [DOI: http://dx.doi.org/10.1016/0040-6090(83)90256-0].
  8. K. H. Kim, R. A. Wibowo, B. Munir, "Properties of Al-deped ZnO thin film sputtered from powder compacted target" Material letters, Vol. 60, Issue 15, p. 1931-1935 (2005) [DOI: http://dx.doi.org/10.1016/j.matlet.2005.12.055].
  9. A. V. Singh, R. M. Mehra, A. Wakahara, A. Yosida, 3rde world Conference on photovoltaic Energy Conversion, 2003.

피인용 문헌

  1. Plasma Textured Glass Surface Morphologies for Amorphous Silicon Thin Film Solar Cells-A review vol.17, pp.2, 2016, https://doi.org/10.4313/TEEM.2016.17.2.98
  2. Light scattering effect of ITO:Zr/AZO films deposited on periodic textured glass surface morphologies for silicon thin film solar cells vol.120, pp.3, 2015, https://doi.org/10.1007/s00339-015-9335-5
  3. SF6/Ar plasma textured periodic glass surface morphologies with high transmittance and haze ratio of ITO:Zr films for amorphous silicon thin film solar cells vol.117, 2015, https://doi.org/10.1016/j.vacuum.2015.04.003