• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.103-103
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• 2003

ZnO$_{1-x}$(또는 Zn$_{1+x}$O) 산화아연은 과잉의 아연(또는 oxygen vacancy)이 도우너(donor) 역할을 하는 비화학양론적 n형 산화물 반도체이다. ZnO는 높은 투과율을 가지고 온도나 주변환경에 대해 매우 안정하며, 또한 이미 상용화된 ITO (Indium tin oxide)에 비해 식각 특성이 우수하고, 수소 플라즈마에 대한 저항성이 크다는 장점 때문에 가스센서와 디스플레이용 소자 등 다양한 분야에 응용이 가능하다. ZnO 박막은 CVD, Reactive Magnetron Sputtering, Electron-beam Evaporation 등 여러 가지방법으로 제작할 수 있다. 본 연구에서는 형성된 박막의 구성성분이 타겟의 성분과 유사하고 낯은 기판온도에서도 박막이 형성되어지는 장점을 가지는 Pulsed Laser Deposition 방법을 사용하여 유리 기판위에 ZnO 박막을 형성하였다.다.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.73-78
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• 2012

The chemical, electrical, and optical properties of ZnO and Al-doped ZnO films after high temperature annealing were studied. The resistivity increased significantly after annealing at $600^{\circ}C$ under $10^{-10}$ Torr atmosphere. The mechanism of the resistivity change was explored using photoemission spectroscopy and photoluminescence spectrometer. The results indicated that the amount of oxygen deficient region O-Zn bonds decreased and oxygen vacancy was decreased after the high temperature vacuum annealing. The increase in the resistivity of ZnO and Al-doped ZnO films was resulted from the decrease in carrier concentration due to a decrease in the amount of oxygen deficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.107-108
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• 2006

ZnO is a promising material for UV or blue LEDs p-Type ZnO thin films which are imperative for the p-n junction of LEDs are difficult to achieve because of strong compensation of intrinsic defects such as zinc interstitial and oxygen vacancy. The method of codoping group three elements and group five elements is effective for the realization of p-type ZnO films. In this study, We codoped N and Al m ZnO thin films by RF magnetron sputtering and annealed the films in sputtering chamber. Some films showed p-type conductivity m Seeback effect measurement.

• ETRI Journal
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• v.34 no.2
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• pp.280-283
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• 2012

By inserting $H_2O$ treatment steps during atomic layer deposition of a ZnO layer, the turn-on voltage shift from negative bias stress (NBS) under illumination was reduced considerably compared to that of a device that has a continuously grown ZnO layer without any treatment steps. Meanwhile, treatment steps without introducing reactive gases, and simply staying under a low working pressure, aggravated the instability under illuminated NBS due to an increase of oxygen vacancy concentration in the ZnO layer. From the experiment results, additional oxidation of the ZnO channel layer is proven to be effective in improving the stability against illuminated NBS.

• Journal of the Korean Ceramic Society
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• v.13 no.3
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• pp.28-36
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• 1976

Zn 산화물을 산과 공기 그리고 헬륨 각각의 분위기에서 열처리 한 후 그 각각에 대한 열광성을 $83^{\circ}~300^{\circ}K$의 온도 범위에서 연구하였다. Zn 산화물의 열광성은 90$0^{\circ}C$ 이상의 온도에서는 산소의 부분압에 의존하며 그 최대강도는 1/T에 비례하였다. 이 성질을 유발한다고 믿어지고 있는 비화학양론적인 결함으 주 요인은 2개의 전자를 trap 하는 산호 이온의 vacancy라고 믿어지고 있다. Trap된 전자의 활성화에너지는 0.13ev였다.

• 한국전자현미경학회:학술대회논문집
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• 1996.11a
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• pp.20-23
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• 1996

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2001.11a
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• pp.13-16
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• 2001

In this paper, the emission and aging properties of ZnS:Cu electroluminescent device were experiment respectively at room temperature and 7$0^{\circ}C$ relative humidity 100%. ZnS:Cu and BaTiO$_3$were respectively used for phosphor and dielectric. While AC 100V on 400Hz frequency were applied to the devices at room temperature and 70$_3$relative humidity 100%, the change of brightness were measured and compared. The surface of aged devices were investigated by scanning electron microscope. With the continuously operated environment of room temperature and 7$0^{\circ}C$ relative humidity 100%, the decay time were measured and the dark spot and aging status on the surface of the device were investigated. ZnS:Cu electroluminescent properties were deteriorated by the Increased temperature and humidity. Also the deteriorated properties were confirmed by the brightness and surface chanties of device, and the aging mechanism from the simulation on sulfur vacancy and deep tracts density.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.71-75
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• 2014

To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.05a
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• pp.137-137
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.170-170
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• 2006