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http://dx.doi.org/10.6117/kmeps.2012.19.2.073

Surface Oxidation Effect During high Temperature Vacuum Annealing on the Electrical Conductivity of ZnO thin Films Deposited by ALD  

Kim, Jin-Yong (Department of Materials Science and Engineering, Yonsei University)
Choi, Yong-June (Department of Materials Science and Engineering, Yonsei University)
Park, Hyung-Ho (Department of Materials Science and Engineering, Yonsei University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.19, no.2, 2012 , pp. 73-78 More about this Journal
Abstract
The chemical, electrical, and optical properties of ZnO and Al-doped ZnO films after high temperature annealing were studied. The resistivity increased significantly after annealing at $600^{\circ}C$ under $10^{-10}$ Torr atmosphere. The mechanism of the resistivity change was explored using photoemission spectroscopy and photoluminescence spectrometer. The results indicated that the amount of oxygen deficient region O-Zn bonds decreased and oxygen vacancy was decreased after the high temperature vacuum annealing. The increase in the resistivity of ZnO and Al-doped ZnO films was resulted from the decrease in carrier concentration due to a decrease in the amount of oxygen deficiency.
Keywords
ZnO; Al; ALD; high temperature vacuum annealing; PES; SIMS; PL;
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Times Cited By KSCI : 2  (Citation Analysis)
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