Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation
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Oh, Him-Chan
(Convergence Components & Materials Research Laboratory, ETRI)
KoPark, Sang-Hee (Convergence Components & Materials Research Laboratory, ETRI) Ryu, Min-Ki (Convergence Components & Materials Research Laboratory, ETRI) Hwang, Chi-Sun (Convergence Components & Materials Research Laboratory, ETRI) Yang, Shin-Hyuk (Convergence Components & Materials Research Laboratory, ETRI) Kwon, Oh-Sang (Convergence Components & Materials Research Laboratory, ETRI) |
1 | J.K. Jeong et al., "Origin of Threshold Voltage Instability in Indium-Gallium-Zinc Oxide Thin Film Transistors," Appl. Phys. Lett., vol. 93, no. 12, 2008, pp. 123508.1-3 |
2 | S. Yang et al., "Improvement in the Photon-Induced Bias Stability of Al-Sn-Zn-In-O Thin Film Transistors by Adopting AlOx Passivation Layer," Appl. Phys. Lett., vol. 96, no. 21, 2010, pp. 213511.1-3. |
3 | S.H.K. Park et al., "Channel Protection Layer Effect on the Performance of Oxide TFTs," ETRI J., vol. 31, no. 6, June 2009, pp. 653-659. DOI ScienceOn |
4 | H. Omura et al., "First-Principles Study of Native Point Defects in Crystalline Indium Gallium Zinc Oxide," J. Appl. Phys., vol. 105, no. 9, 2009, pp. 093712.1-8. |
5 | T. Kamiya, K. Nomura, and H. Hosono, "Electronic Structure of the Amorphous Oxide Semiconductor a-InGaZnO4-x:Tauc- Lorentz Optical Model and Origins of Subgap States," Phys. Status Solidi A, vol. 206, no. 5, 2008, pp. 860-867. |
6 | T. Kamiya et al., "Electronic Structure of Oxygen Deficient Amorphous Oxide Semiconductor a-InGaZnO4-x: Optical Analyses and First-Principle Calculations," Phys. Status Solidi C, vol. 5, no. 9, 2008, pp. 3098-3100. DOI ScienceOn |
7 | B. Ryu et al., "O-Vacancy as the Origin of Negative Bias Illumination Stress Instability in Amorphous In-Ga-Zn-O Thin Film Transistors," Appl. Phys. Lett., vol. 97, no. 2, 2010, pp. 022108.1-3 |
8 | J.H. Shin et al., "Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors," ETRI J., vol. 31, no. 1, Feb. 2009, pp. 62-64 DOI ScienceOn |
9 | S.H.K. Park et al., "Transparent and Photo-Stable ZnO Thin-Film Transistors to Drive an Active Matrix Organic-Light-Emitting- Diode Display Panel," Adv. Mater., vol. 21, no. 6, 2009, pp. 678- 682. DOI ScienceOn |
10 | H. Oh et al., "Photon-Accelerated Negative Bias Instability Involving Subgap States Creation in Amorphous In-Ga-Zn-O Thin Film Transistor," Appl. Phys. Lett., vol. 97, no. 18, 2010, pp. 183502.1-3. |
11 | H. Oh et al., "Enhanced Bias Illumination Stability of Oxide Thin Film Transistor through Insertion of Ultrathin Positive Charge Barrier into Active Material," Appl. Phys. Lett., vol. 99, no. 2, 2011, pp. 022105.1-3. |
12 | H. Oh et al., "Transition of Dominant Instability Mechanism Depending on Negative Gate Bias under Illumination in Amorphous In-Ga-Zn-O Thin Film Transistor," Appl. Phys. Lett., vol. 98, no. 3, 2011, pp. 033504.1-3. |
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