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http://dx.doi.org/10.4218/etrij.12.0211.0186

Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation  

Oh, Him-Chan (Convergence Components & Materials Research Laboratory, ETRI)
KoPark, Sang-Hee (Convergence Components & Materials Research Laboratory, ETRI)
Ryu, Min-Ki (Convergence Components & Materials Research Laboratory, ETRI)
Hwang, Chi-Sun (Convergence Components & Materials Research Laboratory, ETRI)
Yang, Shin-Hyuk (Convergence Components & Materials Research Laboratory, ETRI)
Kwon, Oh-Sang (Convergence Components & Materials Research Laboratory, ETRI)
Publication Information
ETRI Journal / v.34, no.2, 2012 , pp. 280-283 More about this Journal
Abstract
By inserting $H_2O$ treatment steps during atomic layer deposition of a ZnO layer, the turn-on voltage shift from negative bias stress (NBS) under illumination was reduced considerably compared to that of a device that has a continuously grown ZnO layer without any treatment steps. Meanwhile, treatment steps without introducing reactive gases, and simply staying under a low working pressure, aggravated the instability under illuminated NBS due to an increase of oxygen vacancy concentration in the ZnO layer. From the experiment results, additional oxidation of the ZnO channel layer is proven to be effective in improving the stability against illuminated NBS.
Keywords
ZnO; thin film transistor; negative bias stress;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
Times Cited By Web Of Science : 5  (Related Records In Web of Science)
Times Cited By SCOPUS : 6
연도 인용수 순위
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