• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.171-173
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• 2001

ZnO:Al transparent conductive thin films were prepared by facing targets sputtering system with a DC power supply using ZnO target containing 2wt% of $Al_2O_3$ and Zn metal target. Sputtering was carried out at substrate temperature of R.T. and $200^{\circ}C$ with a DC current of 0.6A, $O_2$ flow rate of $0.1{\sim}0.5$ and thickness $300{\sim}900nm$. ZnO:Al films showed a resistivity as low as $10^{-4}{\Omega}-cm$ and a transmittance above 85 % at wavelength 300 and 800nm.

• BMB Reports
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• v.49 no.12
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• pp.681-686
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• 2016

Fructose 1,6-bisphosphate aldolase (FBA) is important for both glycolysis and gluconeogenesis in life. Class II (zinc dependent) FBA is an attractive target for the development of antibiotics against protozoa, bacteria, and fungi, and is also widely used to produce various high-value stereoisomers in the chemical and pharmaceutical industry. In this study, the crystal structures of class II Escherichia coli FBA (EcFBA) were determined from four different crystals, with resolutions between $1.8{\AA}$ and $2.0{\AA}$. Native EcFBA structures showed two separate sites of Zn1 (interior position) and Zn2 (active site surface position) for $Zn^{2+}$ ion. Citrate and TRIS bound EcFBA structures showed $Zn^{2+}$ position exclusively at Zn2. Crystallographic snapshots of EcFBA structures with and without ligand binding proposed the rationale of metal shift at the active site, which might be a hidden mechanism to keep the trace metal cofactor $Zn^{2+}$ within EcFBA without losing it.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.5-6
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• 2005

ZnO nanowlres (NWs) were fabricated using Au as catalyst for a method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth. The target used in synthesis was pure ZnO ceramics. Two different substrates were used; (0001)-oriented sapphires and Au-coated sapphires. The Au thin film was deposited by thermal evaporation and the thickness was about 50 ${\AA}$. ZnO NWs were only formed in case of that used catalyst metal. Field effect scanning electron microscopic (FESEM) investigation showed that the average diameter of ZnO NWs was about 70 nm and the typical lengths varied from $3{\sim}4{\mu}m$.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.94-97
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• 2017

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.6
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• pp.789-793
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• 2018

All transparent metal oxide photoelectric device based on $V_2O_5$ was fabricated with structure of $V_2O_5/ZnO/ITO$ by magnetron sputtering system. $V_2O_5$ was deposited by reactive sputtering system with 4 inch vanadium target (purity 99.99%). In order to achieve p-n junction, p-type $V_2O_5$ was deposited onto the n-type ZnO layer. The ITO (indium tin oxide) was applied as the electron transporting layer for effective collection of the photo-induced electrons. Electrical and optical properties were analyzed. The Mott-Schottky analysis was applied to investigate the energy band diagram through the metal oxide layers. The $V_2O_5/ZnO/ITO$ photoelectric device has a rectifying ratio of 99.25 and photoresponse ratios of 1.6, 4.88 and 2.68 under different wavelength light illumination of 455 nm, 560 nm and 740 nm. Superior optical properties were realized with the high transmittance of average 70 % for visible light range. Transparent $V_2O_5$ layer absorbs the short wavelength light efficiently while passing the visible light. This research may provide a route for all-transparent photoelectric devices based on the adoption of the emerging p-type $V_2O_5$ metal oxide layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.120-120
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• 2009

Ga doped ZnO (GZO) transparent conductive films were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of GZO($Ga_2O_3$ 3.w.t%) and Zn metal. The GZO thin films were deposited as a various $PO_2$ (oxygen gas content). Base pressure was $2{\times}10^{-6}torr$, and a working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe (Chang-min), a Hall Effect measurement (Ecopia) and an UV/VIS spectrometer (HP). The minimum resistivity of film was $6.5{\times}10^{-4}[{\Omega}-cm]$ and the average transmittance of over 80% was seen in the visible range

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.262-264
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• 2014

Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

• Ocean and Polar Research
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• v.28 no.2
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• pp.187-199
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• 2006

The Kuroko-type seafloor massive sulfide deposits found in the western Pacific have been considered to have potentials for economic recovery of Au, Ag, Cu, Zn, and Pb. In this study, a preliminary model was developed for the technical and economic evaluation of them. The FRSC site on Lau Basin in the Tonga EEZ was selected as a target. In this study, no construction In for the metallurgical processing subsystem was accounted for. Instead, it was assumed to sell the Cu, Zn, and Pb concentrates to the existing sulfide customer smelter. The low total investment costs for the development make the venture very attractive. However, the result of the economic feasibility evaluation is still less attractive with the mean metal yield of the Kuroko on land. It is considered that commercial mining may be plausible if the richer metal yields are applied to the development. Quantitative information for metal yield is necessary for a more accurate evaluation. However, the important resource potential information regarding the amount of ore body, the inside structure, and the metal yields have not yet been clarified sufficiently. h addition, the flotation of ore body using seawater has not been tested yet. It is necessary to solve these problems through the experimental R&D and a survey.

• Membrane and Water Treatment
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• v.3 no.2
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• pp.123-131
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• 2012

This study investigated the extraction and stripping performance of PIMs consisting of PVC and Aliquat 336. Extraction and stripping of three representative heavy metals - namely $Cd^{2+}$, $Cu^{2+}$, and $Zn^{2+}$ - by the synthesized membranes were evaluated as a function of sodium chloride concentration and under different stripping solutions (0.01 M $HNO_3$, Milli-Q water, 0.01 M HCl and 0.01 M NaOH), respectively. Results reported here indicate that the formation of negatively charged metal chloride complex species was responsible for the extraction of the target metal to PIMs. Experimental results and thermodynamic modeling of the speciation of chloro metal complexes further confirm that the extraction selectivity between $Cd^{2+}$, $Cu^{2+}$ and $Zn^{2+}$ can be controlled by regulating the chloride concentration of the feed solution. An acidic solution without any chloride was the most effective stripping solution, followed by Milli-Q water, and a diluted hydrochloric acid solution. On the other hand, the stripping of metals from PIMs did not occur when a basic stripping solution was used.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.239-245
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• 1995

Mn-Zn ferrite thin films were deposited on $SiO_2(1000 \AA)/Si(100)$ by ion beam sputtering using a single ion source. A mosaic target consisting of a single crystal(ll0) Mn-Zn ferrite with a Fe metal strip on it was used. As-deposited films without oxygen gas flow have a wiistite structure due to oxygen deficiencies, which originated from the extra metal atoms sputtered from the metal strips during deposition. The as-deposited films with oxygen gas flow, however, have a spinel structure with (111) preferred orientation. The crystallization of thin films was maximized at the ion beam extraction voltage of 2.lkV, at which the deposited films are bombarded appropriately by the energetic secondary ions reflected from the target. As the extraction voltage increased or decreased from the optimum value, the crystallinity of thin films becomes poor owing to a weak and severe bombardment of the secondary ions, respectively. Crystallization due to the bombardment of the secondary ions was also maximized at the beam incidence angle of $55^{\circ}$. The as-deposited ferrite thin films with a spinel structure showed ferrimagnetism and had an in-plane magnetization easy axis.