A Study on the Electrical and Optical Properties of Transparent Conductive ZnO:Al Films on Variation of Film Thickness

막 두께에 따른 ZnO:Al 투명 전도막의 전기적, 광학적 특성

  • 양진석 (경원대학교 전기전자공학과) ;
  • 박원효 (경원대학교 전기전자공학과) ;
  • 김용진 (경원대학교 전기전자공학과) ;
  • 성하윤 (경원대학교 전기전자공학과) ;
  • 금민종 (경원대학교 전기전자공학과) ;
  • 손인환 (신성대학 전기과) ;
  • 신성권 (동해대학교 정보통신공학과) ;
  • 김경환 (경원대학교 전기전자공학과)
  • Published : 2001.11.03

Abstract

ZnO:Al transparent conductive thin films were prepared by facing targets sputtering system with a DC power supply using ZnO target containing 2wt% of $Al_2O_3$ and Zn metal target. Sputtering was carried out at substrate temperature of R.T. and $200^{\circ}C$ with a DC current of 0.6A, $O_2$ flow rate of $0.1{\sim}0.5$ and thickness $300{\sim}900nm$. ZnO:Al films showed a resistivity as low as $10^{-4}{\Omega}-cm$ and a transmittance above 85 % at wavelength 300 and 800nm.

Keywords