• Korean Journal of Materials Research
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• v.20 no.7
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• pp.351-355
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• 2010

Transparent conducting aluminum-doped ZnO thin films were deposited using a sol-gel process. In this study, the important deposition parameters were investigated thoroughly to determine the appropriate procedures to grow large area thin films with low resistivity and high transparency at low cost for device applications. The doping concentration of aluminum was adjusted in a range from 1 to 4 mol% by controlling the precursor concentration. The annealing temperatures for the pre-heat treatment and post-heat treatment was $250^{\circ}C$ and 400-$600^{\circ}C$, respectively. The SEM images show that Al doped and undoped ZnO films were quite uniform and compact. The XRD pattern shows that the Al doped ZnO film has poorer crystallinity than the undoped films. The crystal quality of Al doped ZnO films was improved with an increase of the annealing temperature to $600^{\circ}C$. Although the structure of the aluminum doped ZnO films did not have a preferred orientation along the (002) plane, these films had high transmittance (> 87%) in the visible region. The absorption edge was observed at approximately 370 nm, and the absorption wavelength showed a blue-shift with increasing doping concentration. The ZnO films annealed at $500^{\circ}C$ showed the lowest resistivity at 1 mol% Al doping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.55-56
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• 2005

The properties of phosphorus doped ZnO thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated depending on various deposition conditions. The phosphorus (P) doped ZnO target was composed of ZnO + x wt% Al (x=1, 3, 5). The structural, electrical and optical properties of the ZnO thin films were measured by X-ray diffraction (XRD), Hall measurements and photoluminescence (PL). As the deposition temperature optimized, the electrical properties of the phosphorus doped ZnO (ZnO:P) layer showed a electron concentration of $7.76\times10^{16}/cm^3$, a mobility of 10.225 $cm^2/Vs$, a resistivity of 7.932 $\Omega$cm. It was observed the electrical property of the film was changed by dopant activation effect as target variations and deposition conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.127-130
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• 2005

The properties of phosphorus doped ZnO multilayer thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated by using annealing treatment at various annealing temperature after deposition. The phosphorus doped ZnO multilayer was composed of phosphorus doped ZnO layer and two pure ZnO layers on sapphire substrate. The structural. electrical and optical properties of the ZnOthin films were measured by X-ray diffraction (XRD). Hall measurements and photoluminescence (PL). As the annealing temperature optimized. the electrical properties of the ZnO multilayer showed a electron concentration of $1.56{\times}10^{16}/cm^3$, a resistivity of 17.97 ${\Omega}cm$. It was observed the electrical property of the film was changed by dopant activation effect as thermal annealing process

• Advances in materials Research
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• v.11 no.3
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• pp.225-235
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• 2022

It includes the synthesis of pristine ZnO nanoparticles and a series of Ag-doped zinc oxide nanoparticles was carried out by reflux method by varying the amount of silver (1, 3, 5, 7 and 9% by mol.). The morphology of these nanoparticles was investigated by SEM, XRD and FT-IR techniques. These techniques show that synthesized particles are homogenous spherical nanoparticles having an average particle size of about 50-100 nm along with some agglomeration. The photocatalytic activity of the ZnO nanoparticles and Ag doped ZnO nanoparticles were investigated via photodegradation of methylene blue (MB) as a standard dye. The data from the photocatalytic activity of these nanoparticles show that 7% Ag-doped ZnO nanoparticles exhibit much enhanced photocatalytic activity as compared to pristine ZnO nanoparticles and other percentages of Ag-doped ZnO nanoparticles. Furthermore, 7% Ag-doped ZnO was made composites with sulfur-doped graphitic carbon nitride by physical mixing method and a series of nanocomposites were made (3.5, 7.5, 25, 50, 75% by weight). It was observed that the 25% composites exhibited better photocatalytic performance than pristine S-g-C 3 N 4 and pure 7% Ag-doped ZnO. Tauc's plot also supports the photodegradation results.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.17-22
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• 1998

B-doped ZnO thin films on glass substrates were prepared by sputtering the ceramic targets which had been prepared by sintering disks consisting of ZnO and various amounts of B2O3 While pure ZnO films show-ed a c-axis oriented growth the B-doping retarded the prefered orientation and grain growth of the film. Electron concentrations for undoped and B-doped ZnO films were on the order of 7.8${\times}$1018 cm-3 and 5${\times}${{{{ {10 }^{20 } }} c{{{{ {m }^{-3 } }} respectively. The electron mobility however decreased with the B-doping concentration. Optical meas-urements on the films showed that the average transmittance in the visible range was higher than 85% The measurements also indicated a blueshift of the absorption edge with doping.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.363-366
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• 2007

[ $Zn_2SiO_4:Mn$ ] green phosphors doped with $NH_4Cl$ and Al for PDP were synthesized by solid state reaction method. The luminescence of 532 nm in $Zn_2SiO_4:Mn$ phosphors was associated with $^4T_1{\to}^6A_1$ transition. Photoluminescence intensity of $Zn_2SiO_4:Mn$ doped with $NH_4Cl$ 15 mol% increased about two times as compared with that of $NH_4Cl$ non-doped sample. The color of the emission of Al-doped $Zn_2SiO_4:Mn$ phosphors changed to yellowish green.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.93-96
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• 2000

In this study, we investigated the electromagnetic properties of Mn-Zn ferrite doped with rare earth oxide (Dy$_2$O$_3$, Er$_2$O$_3$). The main composition is 52mo1% $\alpha$-Fe$_2$O$_3$, 25mo1% Mn$_3$O$_4$23mo1% ZnO and doped with them(0.05wt%~0.25wt%, step:0.05wt%). An experimental process has advanced by conventional ferrimagnetism manufacturing that was prepared by standard ceramic techniques. The XRD pattern of all doped sample were observed spinel and secondary phase. The density of sample were measured nearly constant value. As increased the additive, resistivity, initial permeability and real component of the series complex permeability increased with setting limits each other. In case of Mn-Zn ferrite excess doped with them, resistivity, initial permeability and real component of the series complex permeability decreased and magnetic loss increased in proportion to increasing the additive.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.93-96
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• 2000

In this study, we investigated the electromagnetic properties of Mn-Zn ferrite doped with rare earth oxide (Dy$_2$O$_3$, Er$_2$O$_3$). The main composition is 52mo1% ${\alpha}$-Fe$_2$O$_3$, 25mol% Mn$_3$O$_4$ 23mo1% ZnO and doped with them(0.05wt% ∼ 0.25wt%, step:0.05wt%). An experimental process has advanced by conventional ferrimagnetism manufacturing that was prepared by standard ceramic techniques. The XRD pattern of all doped sample were observed spinel and secondary phase. The density of sample were measured nearly constant value. As increased the additive, resistivity, initial permeability and real component of the series complex permeability increased with setting limits each other. In case of Mn-Zn ferrite excess doped with them, resistivity, initial permeability and real component of the series complex permeability decreased and magnetic loss increased in proportion to increasing the additive.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.312-316
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• 1999

I-V characteristics of Praseodymium-based ZnO varistor doped with $Nd_2O_3$ in the range 0.0-2.0mol% sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$ were investigated. In the all sides, ZnO varistors sintered at $1300^{\circ}C$ exhibited much better varistor characteristics than that at 135$0^{\circ}C$. All ZnO varistors doped with $Nd_2O_3$ sintered at $1300^{\circ}C$ exhibited good varistor characteristics but particularly ZnO varistor doped with l.Omol% $Nd_2O_3$ exhibited the best characteristics, which the nonlinear is 65.2 and the leakage current is 4.5pA. It is estimated that ZnO varistor doped with l.Omol% $Nd_2O_3$ will begin to be sufficiently used as basic composition to fabricate a good varistor.

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.84-89
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• 2006

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.