• 한국식품저장유통학회지
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• 제31권1호
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• pp.126-137
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• 2024

카라기난 기반 복합필름은 세 가지 다른 아연 염(zinc acetate, zinc chloride 및 zinc nitrate) 원료를 사용하여 합성한 ZnONPs를 카라기난에 첨가하여 solvent casting 방법으로 제작되었다. SEM 결과에 따르면, 사용된 아연 염의 종류에 따라 ZnONPs의 크기와 모양에 차이가 나타났지만, 모든 ZnONPs가 카라기난 복합필름 내에서 균일하게 분산되어 있는 것을 확인할 수 있었다. 카라기난 기반 복합필름(Car-ZnONPs)의 두께는 아연 염의 종류와 관계없이 순수 카라기난 필름에 비해 증가하였다. 파단 연신율(EB)은 증가하였고, 인장강도(TS)는 유의적으로 감소하였으며, 탄성 계수(EM)는 유의적 차이를 나타내지 않았다. 이를 통해 복합필름의 기계적 특성인 TS와 EB는 첨가된 나노입자의 크기와 첨가량에 영향을 받는다는 것을 확인하였다. 또한, 모든 종류의 Car-ZnONPs 복합필름은 E. coli O157:H7 및 L. monocytogenes 에 대해 강한 항균 활성을 나타냈으며, 특히 zinc chloride로 합성된 Car-ZnONPs^ZC 필름이 가장 우수한 항균 성능을 나타냈다. 이는 zinc chloride에서 합성된 나노입자가 다른 아연 염에 비해 더 많은 아연 이온을 방출하기 때문으로 판단된다. 아연 염의 종류가 ZnONPs의 항균 능력에 영향을 미치며, 이러한 영향은 염의 종류에 따라 변화하는 ZnONPs의 크기, 형태 및 아연 이온 방출 정도에서 기인한다. 평가된 복합필름 중 Car- ZnONPs^ZC가 가장 높은 자외선 차단 특성을 보였으며, 파단 연신율도 순수 카라기난 필름에 비해 유의미하게 증가하여, 포장된 식품의 안전성을 유지하고 유통기한을 연장하는 데 활성 포장 필름으로 사용될 수 있을 것으로 기대된다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.121.2-121.2
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• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.693-694
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• 2010

• Journal of Electrical Engineering and Technology
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• 제12권6호
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• pp.2353-2358
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• 2017

A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process-based IZO TFTs exhibit a field-effect mobility of $3.75cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $1.77{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZO-based inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.703-706
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• 2006

Zinc oxide nanocrystals are attractive candidates for a solution-processable semiconductor for high performance thin film field effect transistors. We have studied ZnO thin film transistor fabricated by solution process and have improved $V_{th}$ by controlling the ZnO ink additives. Synthesized ZnO nanoparticles of 30nm were dispersed in solvent to make the ZnO ink. ZnO ink was spin coated on silicon wafer and after heat treatment electrodes were patterned.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.443-443
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• 2012

We fabricated a-IGZO TFT with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. Enhanced electrical device performance of a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = = 400/50 mm) was achieved with a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10-12 A, a threshold voltage of 1.80 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ration of 9x109. It demonstrated the potential application of the AZO/Ag/AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.207-212
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• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.546-549
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• 2009

In this paper, we investigated the effects of different source/drain (S/D) electrode materials in thin film transistors (TFTs) based on indium-gallium-zinc oxide (IGZO) semiconductor. A transfer length and effective resistances between S/D electrodes and amorphous IGZO thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low drain voltage. The TFTs fabricated with Cu S/D electrodes showed the lowest contact resistance and transfer length indicating good ohmic characteristics, and good transfer characteristics with a field-effect mobility (${\mu}_{FE}$) of 10.0 $cm^2$/Vs.

• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.188-192
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• 2018

In this study, we fabricated an $NO_X$ gas sensor using a composite film of multi-walled carbon nanotubes (MWCNT)/zinc oxide (ZnO). Carbon nanotubes (CNTs) show good electronic conductivity and chemical-stability, and zinc oxide (ZnO) is a wide band gap semiconductor with a large exciton binding energy. Gas sensors require characteristics such as high speed, sensitivity, and selectivity. The fabricated gas sensor was used to detect $NO_X$ gas at different $NO_X$ concentrations. The sensitivity of the gas sensor increased with increasing gas concentrations. Additionally, while changing the temperature inside the chamber containing the MWCNT/ZnO gas sensor, we obtained the sensitivity and normalized responses for detecting $NO_X$ gas in comparison to ZnO and MWCNT film gas sensors. From the experimental results, we confirmed that the gas sensor sensing mechanism was enhanced in the composite-film gas-sensor and that the electronic interaction between MWCNT and ZnO contributed to the improved sensor performance.

• Bulletin of the Korean Chemical Society
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• 제30권10호
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• pp.2387-2392
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• 2009

A composite film of multi-walled carbon nanotube (MWCNT)/sol-gel-derived zinc oxide(ZnO)/Nafion has been utilized as an efficient immobilization matrix for the construction of a highly sensitive and stable tris(2,2'-bipyridyl) ruthenium(II) (Ru(${bpy)_3}^{2+})$ electrogenerated chemiluminescence (ECL) sensor. The electrochemical and ECL behaviors of Ru(${bpy)_3}^{2+})$ ion-exchanged into the composite film were strongly dependent upon the sol-gel preparation condition, the amount of MWCNT incorporated into the ZnO/Nafion composite film, and the buffer solution pH. The synergistic effect of MWCNTs and ZnO in the composite films increased not only the sensitivity but also the long-term stability of the ECL sensor. The present ECL sensor based on the MWCNT/ZnO/Nafion gave a linear response ($R^2$ = 0.999) for tripropylamine concentration from 500 nM to 1.0 mM with a remarkable detection limit (S/N = 3) of 15 nM. The present ECL sensor showed outstanding long-term stability (94% initial signal retained for 5 weeks). Since the present ECL sensor exhibits large response towards NADH, it could be applied as a transduction platform for the ECL biosensor in which the NADH is produced from the dehydrogenase-based enzymatic reaction in the presence of NA$D^+$ cofactor.