• Journal of the Korean Solar Energy Society
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• v.37 no.4
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• pp.23-33
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• 2017

A great deal of study for loss reduction of photovoltaic system is conducted currently. It is hard to distinct the fault of photovoltaic system with the naked eye. For that reason, it is essential to repair and maintain the PV system by monitoring the system. The fault of individual modules can cause the huge loss of the entire system because of the mismatch. Therefore, the method of diagnosing the PV array is necessary by measuring the multi-channel arrays simultaneously. In this paper, it is presented the method of measuring I-V curve of multi-channel arrays simultaneously by using the charge and discharge characteristics of capacitor. Generated DC power at PV arrays is charged and discharged at the capacitors in a moment. By measuring the charged voltage and current, it is possible to diagnose of performance of PV arrays.

• Journal of Magnetics
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• v.10 no.3
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• pp.122-127
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• 2005

New classes of LC resonators for micro magnetic sensor device were proposed and fabricated. The first type LC resonator (Type I) consists of a small piece of microwire and two cylindrical electrodes at the end of the microwire without direct contact to its ferromagnetic core. In type I resonator the ferromagnetic core of the microwire and cylindrical electrodes act as an inductor and two capacitors respectively to form a LC circuit. The second type LC resonator (Type II) consists of a solenoidal micro-inductor with a bundle of soft magnetic microwires as a core. The solenoidal micro-inductors fabricated by MEMS technique were $500\sim1,000\;\mu{m}$ in length with $10\sim20$ turns. A capacitor is connected in parallel to the micro-inductor to form a LC circuit. A tiny glass coated $CO_{83.2}B_{3.3}Si_{5.9}Mn_{7.6}$ microwire was fabricated by a glass-coated melt spinning technique. A supergiant magneto-impedance effect was found in a type I resonator as much as 400,000% by precise tuning frequency at around 518.51 MHz. In type II resonator the changes of inductance as a function of external magnetic field in micro-inductors with properly annealed microwire cores were varied as much as 370%. The phase angle between current and voltage was also strongly dependent on the magnetic field. The drastic increments of magnetoimpedance at near the resonance frequency were observed in both types of LC resonators. Accordingly, the sudden change of the phase angle, as large as $180^{\circ}C$, evidenced the occurrence of the resonance at a given external magnetic field.

• Journal of Sensor Science and Technology
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• v.31 no.5
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• pp.318-323
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• 2022

Barium titanate (BaTiO₃) is considered to be a beneficial ceramic material for multilayer ceramic capacitor (MLCC) applications because of its high dielectric constant and low dielectric loss. Numerous attempts have been made to improve the physical properties of BaTiO₃ in response to recent market trends by employing multicomponent alloying strategies. However, owing to its significant number of atomic combinations and unpredictable physical properties, finding a traditional experimental approach to develop multicomponent systems is difficult; the development of such systems is also time-consuming. In this study, 168 new structures were fabricated using special quasi-random structures (SQSs) of Ba_1-xCa_xTi_1-yZryO₃, and 1680 physical properties were extracted from first-principles calculations. In addition, we built an integrated database to manage the computational results, and will provide big data solutions by performing data analysis combined with AI modeling. We believe that our research will enable the global materials market to realize digital transformation through datalization and intelligence of the material development process.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.759-766
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• 1994

Our investigation aimed to reduce the leakage current of $Ta_2O_5$ thin film capacitor by layering SnOz thin film layer under Ta thin film, thereby supplying extra oxygen ions from the $SnO_{2}$ underlayer to enhance the stoichiometry of $Ta_2O_5$ during the oxidation of Ta thin film. Tantalum was evaporated by e-beam or sputtered on p-Si wafers with various deposition temperatures and was oxidized by dry--oxygen at the temperatures between $500^{\circ}C$ and $900^{\circ}C$. Aluminum top and bottom electrodes were formed to make Al/$Ta_2O_5$/p-Si/Al or $Al/Ta_2O_5/SnO_2$p-Si/AI MIS type capacitors. LCR meter and pico-ammeter were used to measure the dielectric constants and leakage currents of the prepared thm film capacitors. XRD, AES and ESCA were employed to confirm the crystallization of the thin f~lm and the compositions of the films. Dielectric constant of $Ta_2O_5$ thin film capacitor with $SnO_{2}$ underlayer was found to be about 200, which is about 10 times higher than that of $Ta_2O_5$ thin film capacitor without $SnO_{2}$ underlayer. In addition, higher oxidation temperatures increased the dielectric constants and reduced the leakage current. Higher deposition temperature generally gave lower leakage current. $Ta_2O_5/SnO_2$ capacitor deposited at $200^{\circ}C$ and oxidized at $800^{\circ}C$ showed significantly lower leakage current, $10^{-7}A/\textrm{cm}^2$ at $4 \times 10^{5}$V/cm, compared to the one without $SnO_{2}$ underlayer. XRD showed that $Ta_2O_5$ thin film was crystallized above $700^{\circ}C$. AES and ESCA showed that initially the $SnO_{2}$, underlayer supplied oxygen ions to oxidize the Ta layer, however, Sn also diffused into the Ta thin film layer to form a new $Ta_xSn_YO_Z$ , ternary oxide layer after all.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.8-14
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• 2007

In this paper, $HfO_2$/Hf stacked film has been applied as the gate dielectric in MOS devices. The $HfO_2$ thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$ as precursors. Prior to the deposition of the $HfO_2$ film, a thin Hf metal layer was deposited as an intermediate layer. Round-type MOS capacitors have been fabricated on Si substrates with 2000${\AA}$-thick Al or Pt top electrode. The prepared film showed the stoichiometric components. At the $HfO_2$/Si interface, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. It seems that the intermediate Hf metal layer has a benefit for the enhancement of electric characteristics of gate dielectric in $HfO_2$/Si structure.

• Journal of Environmental Health Sciences
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• v.27 no.2
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• pp.127-137
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• 2001

Polychlorinated biphenyls(PCBs) are halogenated aromatic compounds with the empirical formula $C_{12}$ $H_{10-n}$C $l_{n}$(n=1~10), and are a mixture of possible 209 different chlorinated congeners. PCBs were widely used as dielectric fluids for capacitors and transformers, plasticizers, lubricant inks and paint addirives. Once released into the environment, PCBs persist for years because they are so resistant to degradation. In addition to their persistence in the environment, PCBs in ecological food chains undergo biomagnification because of their high degree of lipophilicity. In 1970s, the worldwide production of PCBs was ceased and the import of PCBs was prohibited since 1983 in Korea. In spite of these actions, many PCBs seems to be still in use. The environmental load of PCBs will continue to be recycled through air, land, water, and the biosphere for decades to come. This study was conducted to measure the concentrations of PCBs in the serum samples of 112 women by GC/MSD and GC/ECD. The main results of this study were as follows. 1. PCBs were detected in all samples. The mean $\pm$SD levels of PCBs in the serum were 3.613$\pm$0.759 ppb, and median were 3.828 ppb. 2. The correlation coefficients of the concentrations of 13 PCB congeners were from minimum, 0.7913 to maximum, 0.9985, and all was significant(p=0.0001). The correlation coefficient between the concentrations of PCBs and p,p'-DDE was 0.9641(p=0.0001). 3. There was a positive association between age and PCBs' concentrations (simple linear regression ; $R^2$=0.86, $\beta$=0.08023, p<0.001). 4. There was a positive association between total lipids in the serum and PCBs' concentrations (simple linear regression ; $R^2$=0.7058, $\beta$=0.00486, p<0.001). 5. For possible predictors of PCBs and p,p' -DDE levels in the serum, age adjusted model (Y=$\beta$$_{0}$+$\beta$$_1$age+ $B_2$X) was applied. For BMI, major residential area, wether to eat caught fish by angling, where to eat caught fish by angling(by parents in the past), fish consumption, meat consumption, meat consumption, and dairy consumption, there was no association. For total conception frequency and lactation frequency and lactation period, there was negative association.ion.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.4
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• pp.21-28
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• 2006

In this paper, the proposed full-bridge high frequency isolated zoo voltage and zero current switching phase shifted pulse width modulation(ZVZCS PS-PWM)DC-DC converter among fuel cell generation system consist of 1.2[kW] fuel cell of Nexa Power Module, full-bridge DC-DC converter to boost the fuel cell low voltage($28{\sim}43[%]$) to 380[VDC] and a single phase full-bridge inverter is implemented to produce AC output(220[VAC], 60[Hz]). A tapped inductor filter with freewheeling diode is newly implemented in the output filter of the proposed full-bridge high frequency isolated ZVZCS PS-PWM DC-DC converter to suppress circulating current under the wide output voltage regulation range, thus to eliminate the switching and transformer turn-on/off over-short voltage or transient phenomena. Besides the efficiency of $93{\sim}97[%]$ is obtained over the wide output voltage regulation ranges and load variations.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1069-1077
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• 2011

In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1064-1073
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• 2013

In this paper, a compact 370 W high efficiency GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) power amplifier(PA) using internal harmonic manipulation circuits is presented for cellular and L-band. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd harmonic frequency. In order to minimize package size, new 41.8 mm GaN HEMT and two MOS(Metal Oxide Semiconductor) capacitors are internally matched and combined package size $10.16{\times}10.16{\times}1.5Tmm^3$ through package material changes and wire bonded in a new package to improve thermal resistance. When drain biased at 48 V, the developed GaN HEMT power amplifier has achieved over 80 % Drain Efficiency(DE) from 770~870 MHz and 75 % DE at 1,805~1,880 MHz with 370 W peak output power(Psat.). This is the state-of-the-art efficiency and output power of GaN HEMT power amplifier at cellular and L-band to the best of our knowledge.