• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.210-213
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• 2017

In this paper, we analyzed the structural design and electrical characteristics of a 3.3 kV super junction FS IGBT as a next generation power device. The device parameters were extracted by design and process simulation. To obtain optimal breakdown voltage, we researched the breakdown characteristics. Initially, we confirmed that the breakdown voltage decreased as trench depth increased. We analyzed the breakdown voltage according to p pillar dose. As a result of the experiment, we confirmed that the breakdown voltage increased as p pillar dose increased. To obtain more than 3.3 kV, the p pillar dose was $5{\times}10^{13}cm^{-2}$, and the epi layer resistance was $140{\Omega}$. We extracted design and process parameters considering the on state voltage drop.

• ETRI Journal
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• v.37 no.5
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• pp.951-960
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• 2015

For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

• BMB Reports
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• v.51 no.3
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• pp.157-162
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• 2018

Angiogenesis is a complex, multistep process involving dynamic changes in endothelial cell (EC) shapes and behaviors, especially in specialized cell types such as tip cells (with active filopodial extensions), stalk cells (with less motility) and phalanx cells (with stable junction connections). The Hippo-Yes-associated protein (YAP)/ transcription activator with PDZ binding motif (TAZ) signaling plays a critical role in development, regeneration and organ size by regulating cell-cell contact and actin cytoskeleton dynamics. Recently, with the finding that YAP is expressed in the front edge of the developing retinal vessels, Hippo-YAP/TAZ signaling has emerged as a new pathway for blood vessel development. Intriguingly, the LATS1/2-mediated angiomotin (AMOT) family and YAP/TAZ activities contribute to EC shapes and behaviors by spatiotemporally modulating actin cytoskeleton dynamics and EC junction stability. Herein, we summarize the recent understanding of the role of Hippo-YAP/TAZ signaling in the processes of EC sprouting and junction maturation in angiogenesis.

• Journal of the Korean Institute of Telematics and Electronics
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• v.17 no.5
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• pp.22-27
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• 1980

The two-step diffusion process of boron into silicon has been investigated using a new diffusion source coiled "Spin-on Source". A simple method is proposei which can estimate the junction depth after the two -step diffusion for the cases where the junction depth after the predeposition is not negligible compared with the junction depth after the two-step diffusion. The estimated junction depths are, then, compared with the experimental measurements.surements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.63-66
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• 2000

In this paper, we present the simulation of the heterojunction bipolar transistor with different Emitter-Base junction structures. Our simulation results include effect of setback and graded layer. We prove the emitter efficiency's improvement through setback and graded layer. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. Later, recombination current model included setback layer and graded layer will be proposed. New recombination current model also wile include abrupt heterojunction's recombination current model. In this paper, the material parameters of the heterojunction bipolar transistor with different Emitter-Base junction structures is introduced.

• Journal of Sensor Science and Technology
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• v.20 no.4
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• pp.230-233
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• 2011

In this paper, highly-efficient optical gating in a junction device based on vanadium dioxide($VO_2$) thin film grown by a sol-gel method was investigated as a gate terminal of a three-terminal device using infrared light with a wavelength of ~1554.6 nm. Due to the photoinduced phase transition, the threshold voltage of the $VO_2$ junction device, at which the device current abruptly jumps, could be tuned with a sensitivity of ~96.5 V/W by adjusting the optical power of the infrared light directly illuminating the device. Compared with the tuning efficiency of the previous device fabricated using $VO_2$ thin film deposited by a pulsed laser deposition method, the threshold voltage of this device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which is ~4.9 times larger than the previous device.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.964-969
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• 2014

In Super Junction MOSFET, Charge Balance is the most important issue of the trench filling Super Junction fabrication process. In order to achieve the best electrical characteristics, the N type and P type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, called Charge Balance Condition. In this paper, two methods from the fabrication process were used at the Charge Balance condition: Trench angle decreasing process and Bottom implantation process. A lower on-resistance could be achieved using a lower trench angle. And a higher breakdown voltage could be achieved using the bottom implantation process. The electrical characteristics of manufactured discrete device chips are compared with those of the devices which are designed of TCAD simulation.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.6
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• pp.126-129
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• 2002

To extract exact screening conditions of TO-CAN laser diode, junction temperature during screening was investigated. Temperature increase due to thermal resistance was measured and compared with theoretical calculation. Injection current dependence of injection temperature was derived with good agreement with experimental data and used to obtain accurate screening conditions.

• Journal of Surface Science and Engineering
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• v.45 no.5
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• pp.188-192
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• 2012

The hetero junction on dielectrics and ferrite for LTCC was prepared by using NiCuZn ferrite. The shrinkage behaviour of ferrite tapes in combination with a dielectric tape was investigated. The characteristics of NiCuZn ferrite were investigated using XRD (X-ray diffractometer), Dilatometer, FE-SEM (Field emission scanning electron microscope), EDS (Energy dispersive spectrometer). NiCuZn ferrite calcined at $700^{\circ}C$ had a good apparent density and initial permeability of magnetic properties. The shrinkage rate of the NCZF700 ferrite and dielectric material was similar. The multilayer revealed dense, uniform morphologies with excellent interface quality. Diffusion of hetero junction such as dielectric and ferrite was not occuring at $900^{\circ}C$.

• Nuclear Engineering and Technology
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• v.41 no.9
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• pp.1191-1204
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• 2009

In this study, a CFD methodology is employed to address the problem of the prediction of the flow in a T-junction. An Unsteady Reynolds Averaged Navier-Stokes (URANS) approach has been selected for its low computational cost. Moreover, Unsteady Reynolds Navier-Stokes methodologies do not need complex boundary formulations for the inlet and the outlet such as those required when using Large Eddy Simulation (LES) or Direct Numerical Simulation (DNS). The results are compared with experimental data and an LES calculation. In the past, URANS has been tried on T-junctions with mixed results. The biggest limit observed was the underestimation of the oscillatory behavior of the temperature. In the present work, we propose a comprehensive approach able to correctly reproduce the root mean square (RMS) of the temperature directly downstream of the T-junction for cases where buoyancy is not present.