• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.145-145
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• 1999

La-Ca-Mn-O (LCMO) 박막에서 초거대 자기 저항 효과와 발견된 이후 자기 센서와 고밀도 자기 저장 매체로서 응용하기 위한 연구가 진행되고 있다. 그러나 현재 대부분의 증착은 타겟과 박막간의 조성의 일치를 위하여 PLD 방법을 이용하고 있으며 RF magnetron sputtering 법으로 증착한 예는 많이 보고되고 있지 않으며 특히 적층 성장시킨 예는 아직 보고되지 있지 않다. 또한 LCMO와의 낮은 격자 상수 불일치를 보이는 SrTiO3와 LaAlO3 기판에 LCMO 박막을 성장시킬 경우 LaAlO3의 경우 XRD rocking curve의 curve의 FWHM 값이 SrTiO3 상에 증착시킨 것의 10배 이상의 값을 보인다는 것은 주목할 만한 사실이다. RF magnetron sputtering 법을 이용하여 LaAlO3 기판상에 145nm MCMO 박막을 적층성장시켰다. XRD $ heta$-2$\theta$ scan을 통해 박막이 c-축 배향한 것을 확인할 수 있었으며 RBS 분석결과 4.98%의 minimumyield를 보였으며 이로부터 박막이 적층성장한 것을 확인할 수 있었다. LCMO (200) peak의 XRD $\theta$-rocking 결과 FWHM의 값은 0.311$^{\circ}$를 보였으나 2개의 피크가 존재하는 것을 볼 수 있었다. 따라서 기판의 (200) 피크를 XRD $\theta$-2$\theta$ scan에서 0.3$^{\circ}$ 간격으로 두 개의 피크를 관찰할 수 있었는데 이는 기판과 박막간의 stress로 인한 tetragonal distortion에 의한 것으로 알려져 있었다. 따라서 기판상에 박막이 어떤 식으로 적층 성장되었는지를 RBS를 이용하여 <001>과 <011> 방향으로 2MeV He++를 주입하여 0.1$^{\circ}$ 간격으로 틸팅을 해본 결과 <001> 방향에서는 1.12$^{\circ}$의 차이를 보였다. 이는 기판과의 compressive stress로 인해 c축 방향으로 늘어났으며 stress relaxed layer는 XRD 결과와는 달리 관찰할 수 없었다. 이러한 현상의 기판 자체의 twin 구조로 인한 것으로 생각된다. RBS 분석후 고분해능 XRD를 이용해 LCMO (200) peak의 $\theta$-rocking 결과 이제R지 laAlO3 상 증착한 LCMO의 값으로는 제일 작은 0.147$^{\circ}$를 나타내었다.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.37-42
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• 2000

The comparative study of texture of Al/Ti thin films deposited on low-dielectric polymer and $SiO_2$substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and $SiO_2$by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and $SiO_2$substrates was characterized by cross-sectional transmission electron microscopy (TEM). Both the $\theta$-2$\theta$ method and rocking curve measurement suggest that Al/Ti thin films deposited on $SiO_2$have stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM revealed that grains of Ti films on $SiO_2$substrates had grown perpendicular to the substrate, while the grains of Ti alms on SiLK substrates were formed randomly. The lower degree of (111) texture of Al thin films on low-k polymer was due to Ti underlayer.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.11 no.6
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• pp.105-110
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• 2002

ZnTe epilayers have been successfully grown on (100) CaAs substrate by hot wall epitaxy (HWE) with Zn reservoir. Optimum growth condition has been determined by a four-crystal rocking curve (FCRC). It was found that Zn partial pressure from h reservoir has a strong influence on the quality of grown films. Under the determined optimum growth condition, ZnTe epitaxial films with thickness of 0.72~24.8${\mu}m$ were grown for studying the effect of the thickness on crystalline quality. The FCRC results indicated that the quality of ZnTe films becomes higher rapidly with increase of thickness up to 6${\mu}{\textrm}{m}$. The best value of the FWHM of the few crystal rocking curve, 66 arcsec, was obtained on the film with $12{\mu}m$ in thickness. Until now, this result shows the best quality of ZnTe/GaAs films in reported.

• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.476-480
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• 1999

PbSe thin films were grown using PLD method on the p-Si(100) substrate. To determine what crystalline structure of PbSe thin films have according to the growth temperature, the films were prepared under a substrate temperature changing between a room temperature and $400^{\circ}C$. As a result of analyzing XRD patterns of PbSe thin films prepared at various substrate temperatures and FWHM of PbSe(200) rocking curve, it was found that PbSe thin film obtained at the growth temperature of $200^{\circ}C$ was best crystallized. In addition, the surface morphology of PbSe thin film observed using AFM found itself having the most regularly arranged particles in case of growing the film at $200^{\circ}C$. The measurement of Hall effect indicated that PbSe thin films were n-type semiconductors and that current-voltage characteristic curve exhibit the typical p-n junction phenomenon. In addition, electric conductivity of PbSe thin films was found somewhat higher than that of general semiconductors.

• Journal of the Korean institute of surface engineering
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• v.35 no.5
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• pp.305-311
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• 2002

Optical measurements have been used to study the biaxial tensile strain in heteroeptaxial ZnTe epilayers on the (100) GaAs substrate by hot wall epitaxy (HWE) with Zn reservoir. It is effect on the low-temperature photoluminescence spectrum of the material. Optimum growth condition has been determined by a four-crystal rocking curve (FCRC) and a low temperature photoluminescence measurement (PL). It was found that Zn partial pressure from Zn reservoir has a strong influence on the quality of grown films. Under the determined optimum growth condition, ZnTe epitaxial films with thickness of 0.72~24.8$\mu\textrm{m}$ were grown for studying the effect of the thickness on crystalline quality. The PL and FCRC results indicated that the quality of ZnTe films becomes higher rapidly with increase of thickness up to 6$\mu\textrm{m}$. The best value of the FWHM of the four crystal rocking curve, 66 arcsec, was obtained on the film with 12$\mu\textrm{m}$ in thickness. The PL spectrum shows the splitted strong free exciton emissions and very weak deep band emissions. These results show the high quality of films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.783-791
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• 1994

Piezoelectric ZnO thin films were deposited on 7059 glass substrate by rf magnetron sputtering. The effects of deposition parameter, such as rf power, gas pressure and $O_{2}$/Ar gas ratio, on the crystallinity and electrical properties of the deposited ZnO thin films were studied. It was found that the deposition rate was higher than the previously reported values. ZnO films were suitable for SAW filter since a standard deviation of XRD (002) peak rocking curve was less than $6^{\circ}$. ZnO thin films, which were deposited at $O_{2}$/Ar ratio larger than 25%, showed high resistance. SAW filter was fabricated using ZnO film, of which thickness was 0.25 of the wavelength of the propatating surface acoustic wave. The measured frequency response was consistent with the calculated one. The SAW filter had center frequency 39.08 MHz, phase velocity 2501 m/sec and insertion loss 29 dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.208-211
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• 2001

Hot wall epitaxy 법으로 GaAs(100) 기판 위에 $Zn_{1-x}Mn_xTe(0{\leq}x{\leq}1)$ 단결정 박막을 성장하였다. XRD 스펙트럼으로부터 $Zn_{1-x}Mn_xTe$ epilayer들이 전 영역에 걸쳐 zincblende 구조임을 알았다. double crystal rocking curve(DCRC)로부터 격자상수를 계산하고 이훌 이용하여 조성비를 계산하였다. ZnMnTe 단결정 박막의 DCRC 반치폭은 Mn 조성비가 증가함에 따라 급격하게 증가하다가 포화되는 모습을 나타내었다

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.237-241
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• 2014

We investigated the optimal etching conditions and properties of the surface change due to molten KOH/NaOH chemical wet etching using an AlN wafer which has been put to practical use in the present study. Results were observed using a scanning electron microscope after 5 minutes etching at $350^{\circ}C$, was found to have a surface form of the respective other Al-face, the N-face. In particular, etch-pit in the form of a hexagon, which is observed in the Al-face appeared, It was calculated at $2{\times}10^6/cm^2{\sim}10^{10}/cm^2$ dislocation density. In the case of N-face, lattice defects in the form of the hexagonal pyramids is formed. It was discovered that in order to observe the orientation of the wafer, which corresponds to the C-axis direction of the resulting hexagonal AlN which was analyzed using XRD (0002) and is a state of being oriented in the (0004) plane. The Radius of curvature of AlN wafer was 1.6~17 m measured by DC-XRD rocking curve position.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.619-623
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• 2006

The most important factor which determines resonance characteristics of FBAR(Film Bulk Acoustic Resonator) is the piezoelectricity of piezoelectric film. The piezoelectric properties of ZnO thin films which is strong as FBAR piezoelectric film is determined by the degree of c-axis preferred orientation with (002) plan. Therefore, many researchers have been interested in the study on the preferred orientation of the piezoelectric thin film. This paper has studied the preferred orientation of ZnO piezoelectric thin films using the helped seed layer of ZnO. The result shows that the c-axis ZnO thin films with columnar grains that the value of standard $deviation(\sigma)$ of XRD rocking curve is of $\sigma=1.15^{\circ}$ have the excellent piezoelectric property.