Growth of high quality ZnTe epilayers used for an far-infrared sensor and radiation detector |
Kim, B. J. (Insitute for Advanced Materials Processing, Tohoku University) |
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Effects of thermal strain on the optical properties of heteroepitaxial ZnTe
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Photoluminescence and excitation spectroscopy of ZnTe/GaAs epilayers grown by hot-wall epitaxy
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DOI ScienceOn |
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reparation of High purity cadmun by vacuum distillation and Zone-Melting Method
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DOI |
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ZnTe layers grown on GaAs substrates by low pressure MOCVD
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DOI ScienceOn |
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HWE growth and evaluation of CdTe epitaxial films on GaAs
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DOI |
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Characterization and growth of high quality ZnTe epilayers by hot-wall epitaxy
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DOI ScienceOn |
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Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source
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DOI |
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Metalorganic chemical vapor deposition growth of ZnTe on CaAs
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DOI |
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CdTe and CdZnTe crystal growth by horizontal bridgman technique
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DOI ScienceOn |
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Photoluminescence and excitation spectroscopy of ZnTe/GaAs epilayers grown by hot-wall epitaxy
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DOI ScienceOn |
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Characterization of hot wall epitaxy grown ZnTe layers
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DOI |
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The Prediction of Crack Growth Retardation Behavior by Crack Tip Branching Effects
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과학기술학회마을 |
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Molecular beam epitaxy of Ⅱ-Ⅵ compounds
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DOI ScienceOn |
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Lattice strain near interface of MBE-grown ZnTe on GaAs
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DOI ScienceOn |
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Hot wall epitaxy
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Atomic layer epitaxial growth of ZnSe, ZnTe, and ZnSe-ZnTe strained-layer superlattices
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DOI |