• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.62-64
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• 2015

We have investigated zinc tin oxide (ZTO) thin films under various silicon ratios. ZTO TFTs were fabricated by solution processing with the bottom gate structure. Furthermore, annealing process was performed at different temperatures in various annealing conditions, such as air, vacuum and wet ambient. Completed fabrication of ZTO TFT, and the performance of TFT has been compared depending on the annealing conditions by measuring the transfer curve. In addition, structure in ZTO thin films has been investigated by X-ray diffraction spectroscopy (XRD) and Scanning electron microscope (SEM). It is confirmed that the electrical performance of ZTO TFTs are improved by adopting optimized annealing conditions. Optimized annealing condition has been found for obtaining high mobility.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.302-307
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• 1999

We have grown a high quality ZnSe(100) epilayer on the GaAs(100) substrate by hot-wall epitaxy method. The FWHM value from double-crystal x-ray diffraction rocking curve and growth rate of the ZnSe epilayer grown under the optimal growth conditions were 195 arcsec and 0.03 $\mu \textrm m$/min, respectively. The $I_2^U$ and $I_2^L$ peaks, which split by strain due to lattice mismatch between substrate and epilayer, were measured from the photoluminescence experiment. And we found that the residual impurities in ZnSe epilayer were concerned with Al or CI elements from the calculated binding energy of donor impurity.

• Journal of Pharmaceutical Investigation
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• v.32 no.2
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• pp.81-85
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• 2002

Three polymorphic modifications of CKD-602, water soluble derivative of camptothecin, were obtained by the recrystallization from different organic solvents and characterized by differential scanning calorimetry (DSC), thermogravimetric analysis (TGA) and X-ray powder diffraction (XRPD). The major endothermic peaks of the DSC curve of Form 1, Form 2 and Form 3 was shown at $268.71^{\circ}C$, $247.83^{\circ}C$, $244.76^{\circ}C$, respectively. Form 2 was elucidated to be an acetic acid solvate and Form 3 was elucidated to be a methanol solvate. The dissolution patterns of these three modifications were also checked in distilled water at $37{\pm}0.5^{\circ}C$, for 30 minutes. The polymorphic modifications showed differences in the dissolution rate. The dissolution rate of Form 1 was faster than that of other polymorphic modifications. When stored at different relative humidity over the period of 3 months, all of the polymorphic modifications did not undergo transformation.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.2
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• pp.43-47
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• 2003

Lead zirconate titanate (PZT) thin films were fabricated by the pulsed laser ablation deposition (PLAD) method onto Pt/Ti/SiO$_2$/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The well-crystallized perovskite phase and the (101) preferred orientation were obtained by two-step annealing at the conditions of $650^{\circ}C$, 1 hour. It was found that the temperature for the pulsed laser ablated PZT films annealed via a two-step annealing process can be reduced 20$0^{\circ}C$ compared to that of the conventional three-step annealing temperature profile for enhancing the transformation of the perovskite phase. The remanent polarization and the coercive field of this film were about 20 $\mu$C/$\textrm{cm}^2$ and 46 kV/cm, while the dielectric constant and loss values measured at 1 KHz were approximately 860 and 0.04, respectively. The interesting phenomena of this film, such as vertical shift in hysteresis curve, are also discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.224-227
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• 2001

ZnO buffer layers were used to grow ZnO films on c-plane sapphire substrates. The role of ZnO buffer layers in the growth of ZnO thin films on sapphire substrates was investigated by scanning electron microscopy, X-ray diffraction, and Photolumminescence(PL) measurements. At the optimized ZnO buffer layer thickness of 100 $\AA$, FWHM of $\theta$ -rocking curve of ZnO thin films was minimized to 0.73 degrees and room temperature PL spectra showed that deep level emission was not hardly seen. The optimization of the ZnO buffer layer thickness resulted in improvements of the surface morphology and crystalline quality of ZnO thin films.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.470-475
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• 1999

ZnS and ZnTe epilayers were grown on GaAs(100) GaP(100) substrates by hot-wall eitaxy. X-ray diffraction revealed that the epilayers have zinc-blende structure and were grown in (100) direction. The small values of the full width at half maximum (FWHM) of double crystal rocking curve (DCRC) showed high quality of the epilayers. From the thickness dependence of the FWHM of DCRC, the strain remaining in films is found to be due to the thermal expansion difference as well as due to the lattice mismatch.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.71-74
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• 1998

$Er^{3+}$ doped $NdF_{3}$ single crystalline thin films with smooth, microcrack-free, and high-crystalline quality were grown on $CaF_{2}(111)$ substrate at $500^{\circ}C$by molecular beem epitaxy(MBE). The relation-ship between subcell and supercell showing the reconstructed $3^{1/2} \times 3^{1/2}$ structure was studied by reflection high-energy electron diffraction(RHEED) investigation. The film surface and the growth mode were examined in studied by RHEED patterns and atomic force microscope(AFM) images ex situ. The crystallinity of film and the lattice mismatch between $NdF_{3}Er}^{3+}(0002)$ film and $CaF_{2}(111)$ substrate depending in the $Er^{3+}$ concentration were investigated by X-ray rocking curve analysis.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.662-666
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• 1989

Pure mono Silane(Purity: 99.99%) was used as a thin film source and [$SiH_4$ + $H_2$ (5%)] + [$PH_3$ + $H_2$(0.05%)] mixed dilute gas was used for p-n junction diode. The substrate was P-type silicon wafer (p=$3{\Omega}$ cm) with the direction (100). The crystalline qualities of deposited thin film were investigated by the X-ray diffraction, RHEED and TED patterns and the voltampere characteristics of p-n junction diode was identified by I-V curve.

• Journal of Powder Materials
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• v.11 no.2
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• pp.111-117
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• 2004

The oxidation behavior of 91 WC-9Co hardmetal in weight percentage has been studied in the present work as a part of the development of recycling process. The morphological and compositional changes of the WC-Co hardmetal with oxidation time at 90$0^{\circ}C$ were analyzed by using surface observation and X-ray diffraction. respective]y. As the oxidation time increased, the WC-Co hardmetal was continuously expanded to form porous oxide mixtures of $CoWO_4$ and $WO_3$. The morphology of porous oxide mixture was basically dependent on initial shape of the WC-Co hardmetal. From thermo-gravimetric (TG) analysis, it was found that the oxidation rate was increased with increasing oxidation temperature and oxygen content in the flowing atmospheric gas. The fraction of oxidation versus time curves showed S-curve relationship at a given of oxidation temperature. These oxidation behaviors of the WC-Co hardmetal were discussed in terms of previously proposed kinetic models.

• Proceedings of the KIEE Conference
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• 2007.10a
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• pp.393-394
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• 2007

In this study, to minimize the above effect Zinc Oxide(ZnO) thin films on Si(100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as Ar/$O_2$ gas ratios, RF power, substrate temperature, chamber prsssure and target-substrate distance. To analyze a crystallographic properties of the films, ${\Theta}/2{\Theta}$ mode X-ray diffraction, rocking curve and Alpha-step were performed. SAW filters were fabricated to evaluate the feasibility of ZnO thin film as a piezoelectrical materials and the processes of ZnO SAW filters using etch and lift-off were compared.