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Effects of Two-Step Annealing Process on the Pulsed Laser Ablated Lead Zirconate Titanate Thin Films  

Rhie, Dong-Hee (Dept. of Electrical Engineering, University of Suwon)
Publication Information
KIEE International Transactions on Electrophysics and Applications / v.3C, no.2, 2003 , pp. 43-47 More about this Journal
Abstract
Lead zirconate titanate (PZT) thin films were fabricated by the pulsed laser ablation deposition (PLAD) method onto Pt/Ti/SiO$_2$/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The well-crystallized perovskite phase and the (101) preferred orientation were obtained by two-step annealing at the conditions of $650^{\circ}C$, 1 hour. It was found that the temperature for the pulsed laser ablated PZT films annealed via a two-step annealing process can be reduced 20$0^{\circ}C$ compared to that of the conventional three-step annealing temperature profile for enhancing the transformation of the perovskite phase. The remanent polarization and the coercive field of this film were about 20 $\mu$C/$\textrm{cm}^2$ and 46 kV/cm, while the dielectric constant and loss values measured at 1 KHz were approximately 860 and 0.04, respectively. The interesting phenomena of this film, such as vertical shift in hysteresis curve, are also discussed.
Keywords
pulsed laser ablation deposition(PLAD); lead zirconate titanate(PZT); preferred orientation; perovskite phase; ferroelectric properties; dielectric properties;
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