Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 8 Issue 3B
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- Pages.302-307
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- 1999
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- 1225-8822(pISSN)
Growth and characterization of ZnSe/GaAs epilayer by hot-wall epitaxy method
Hot-Wal Epitaxy 방법에 의한 ZnSe/GaAs 박막 성장과 특성
Abstract
We have grown a high quality ZnSe(100) epilayer on the GaAs(100) substrate by hot-wall epitaxy method. The FWHM value from double-crystal x-ray diffraction rocking curve and growth rate of the ZnSe epilayer grown under the optimal growth conditions were 195 arcsec and 0.03
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