• 대한방사선기술학회지:방사선기술과학
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• 제15권1호
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• pp.107-113
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• 1992

Inverter type X-ray apparatus has been introduced and used several hospitals. Principle of inverter type X-ray generators are such as to convert the frequency of commercial power supply to high frequency and to control the high voltages for X-ray tube. Inverter generators are now on the way for futher development to elliminate single phase generators and three phase generators. We compared inverter type X-ray apparatus with conventional single phase 2 peak and three phase 12 peak, apparatus in the following aspects X-ray out put to tube voltage, linearity of X-ray out put to mA, HVL according to mA contrast to kV.

• 대한방사선기술학회지:방사선기술과학
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• 제18권2호
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• pp.61-73
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• 1995

For the managements of the diagnostic X-ray equipments, the authors examined the output of single phase rectification assembly, Three phase rectification assembly and serial radiographic appartus, and got the following conclusions. 1. When the tube voltages in X-ray control panels ware compared to the measured values on the kVp pulse meter, only little differences were detected in all the X-ray equipments. And most of the equipments were all well managed within the internationally permitted limits, excepting the 12.02 % error at 120 kVp in three phase rectifying assembly. 2. As for the X-ray qualities affecting the X-ray images, the serial radiographic apparatus showed excellence, while the single phase rectification assembly were somewhat inferior to the others only maining the internationally recommended limits. 3. The tube voltage ranges where the X-ray output showed excellence were $100{\sim}200\;mA$ in serial radiographic apparatus, $200{\sim}350\;mA$ in three phase rectification assembly and $350{\sim}400\;mA$ in single phase rectification assembly respectively. 4. In the repeatability test of the X-ray equipments, CVs were in the range of $0.0029{\sim}0.049$, which is within the HEW or KS standards. Consequently all the equipments are thought to be well-manage. 5. This study on characteristics and output of the X-ray equipments was accomplished within a limited short time. Long-time researches on the function managements for the X-ray equipments should be followed along with the periodical checking the output for reduction of X-ray exposures to the patients or radio-technologists, and for maintanance and prediction of trouble of the equipments.

• 한국진공학회지
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• 제17권3호
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• pp.234-239
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• 2008

휴대용 XRF (X-Ray Fluorescence) 장치에 적용할 수 있는 40 kV용 투과 양극형 W-Target tube와 Rh-Target tube를 개발하고 특성을 조사하였다. 특성 x-ray의 에너지와 연속 x-ray의 선량특성은 알려진 결과와 잘 일치함을 확인하였고, 최대 선량을 추출하기 위한 양극금속 박막의 최적 두께는 W-target tube의 경우 약 $2.6{\mu}m$, Rh-target tube의 경우 약 $2.7{\mu}m$ 임을 밝혀내었다. 또한 관전압 40 kV, 관전류 $60{\mu}A$로 30분 동안 연속적으로 작동시켰을 때 양극에서의 온도는 $50^{\circ}C$를 넘지 않아 휴대용 XRF장치에 적용할 수 있음을 확인하였다.

• Journal of the Optical Society of Korea
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• 제14권2호
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• pp.146-151
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• 2010

A comprehensive real-time spectral phase interferometry for direct electric field reconstruction (SPIDER) apparatus for characterizing femtosecond laser pulses is demonstrated. The SPIDER provides the temporal profiles of femtosecond laser pulses, reconstructed at the speed of 3.5 Hz, with parameters of the spectral phase such as group delay dispersion and third-order dispersion. The apparatus is applied successfully to optimize the spectral dispersion of a kHz femtosecond Ti:Sapphire laser by adjusting a grating compressor in real time.

• 한국산학기술학회논문지
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• 제2권2호
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• pp.11-18
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• 2001

본 연구에서는 의료용 X선 발생기의 고전압 발생장치를 설계하는 방법을 제시한다. 고전압의 발생을 위해 인버터를 사용하였다. 또한 라인필터회로, 정류회로, 펄스 복 변조 제어회로, 전 브리지 구동회로, 고전압 트랜스, 고전압 정류회로를 설계 제작하였다. 본 논문에서 제시된 설계 방법에 의해 스위칭 주파수 40 KHz인 고전압 발생장치를 제작·실험하여 가변전압 0∼620 V. 가변전류 50 ∼500 mA를 얻었다.

• Progress in Superconductivity
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• 제14권2호
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• pp.99-101
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• 2012

Fluorescent yield X-ray absorption fine structure (XAFS) spectroscopy is useful for analyzing local structure of specific elements in matrices. We developed an XAFS apparatus with a 100-pixel superconducting tunnel junction (STJ) detector array with a high sensitivity and a high resolution for light-element dopants in wide-gap semiconductors. An STJ detector has a pixel size of $100{\mu}m$ square, and an asymmetric layer structure of Nb(300 nm)-Al(70 nm)/AlOx/Al(70 nm)-Nb(50 nm). The 100-pixel STJ array has an effective area of $1mm^2$. The XAFS apparatus with the STJ array detector was installed in BL-11A of High Energy Accelerator Research Organization, Photon Factory (KEK PF). Fluorescent X-ray spectrum for boron nitride showed that the average energy resolution of the 100-pixels is 12 eV in full width half maximum for the N-K line, and The C-K and N-K lines are separated without peak tail overlap. We analyzed the N dopant atoms implanted into 4H-SiC substrates at a dose of 300 ppm in a 200 nm-thick surface layer. From a comparison between measured X-ray Absorption Near Edge Structure (XANES) spectra and ab initio FEFF calculations, it has been revealed that the N atoms substitute for the C site of the SiC lattice.

• 암석학회지
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• 제3권1호
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• pp.34-40
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• 1994

High pressure X-ray diffraction study was carried out on a graphite to investigate its compressibility as well as any possible phase transition to the hexagonal diamond structure at room temperature. Energy dispersive X-ray diffraction method was introduced using a Mao-Bell type diamond anvil cell with Synchrotron Radiation. Polycrystalline sodium chloride was compressed together with graphite for the high pressure determinations. Because of the poor resolution of the X-ray diffraction pattern of graphite, its compressibility was estimated to be almost same as that of NaCl by graphite (002) X-ray diffraction peak only. An observation of any new peak from a possible hexagonal diamond phase seems very unplausible for its definite identification based on the present data. Alternative approaches such as an Wiggler Radiation source as well as a Large Volume high pressure apparatus will be necessary for the detailed studies on a graphite in future.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1996년도 한국자동제어학술회의논문집(국내학술편); 포항공과대학교, 포항; 24-26 Oct. 1996
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• pp.117-120
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• 1996

In this paper, a new approach to acquire the cross-sentional image for automatic solder joint inspection of double-sided PCB using X-ray source is presented. We designed the apparatus with fixed X-ray source to realize the cross-sectional image by tunning object and detector synchronously. The cross-sectional images are captured at several view angle of X-ray source, the geometric image distortions caused by view angle and the shape of image intensifier are compensated. The precision variation of cross-sectional image by the change of view angle was investigated. Also we acquired the cross-sectional image to the solder joint of double-sided PCB and reconstructed the shape of solder joint.

• 월간포장계
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• 제6호통권182호
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• pp.86-89
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• 2008

• 한국안전학회지
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• 제25권1호
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• pp.27-31
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• 2010

It is a well known fact that the LCD and Semiconductor Devices are a central part of IT industry which is important in the present and the future. But the biggest problem of Semiconductor and LCD manufacturing is maintaining a cleaning room environment. For this reason, the soft X-ray type Ionizer was used as the electrostatic reducer device, which protects damage of the product against electrostatic discharge in the manufacturing process. Therefore it is a essential important factor during Semiconductor and LCD production process. But the soft X-ray has a intrinsic problem with harmful to human being in case of soft X-ray exposure. That's reason we have the research to solve above problem and made an apparatus that it was covered with shielding structure to protect X-ray radiation to outside. And besides, it has a possibility to eliminate the charged electrostatic in the narrow space through the slot for Ion emissions with dual soft X-ray sources on the both side. It is also not make the particles from itself when it has been operated.