• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.3-6
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• 2002

Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure, flow rate, input power density) and various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimization.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.819-824
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• 2000

In this research, the etching characteristics of Ta thin film with chlorine plsama have been studied by Electron Cyclotron Resonance (ECR) plasma etching system. The effects of microwave power, RF bias power, working pressure and gas chemistry on the etching profiles have been investigated. The microloading effect, which was observed at fine pattern formation, was effectively suppressed by double step etching, and anisotropic $0.2{\mu\textrm{m}}$ L&S patterns were successfully generated.

• Journal of the Korean Ceramic Society
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• v.34 no.11
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• pp.1121-1128
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• 1997

In this study, the Ar plasma treatment was used to improve the surface roughness of Poly-Si1-xGex thin film deposited by RTCVD. The surface roughness and the resistivity of Si1-xGex thin film were investigated with variation of Ar plasma treatment parameters (electrode distance, working pressure, time, substrate temperature and R.F power). When the Ar plasma treatment was used, the cluster size decreased by the surface etching effect due to the increasing surface collision energy of particles (ion, neutral atom) in plasma under the conditions of decreasing electrode distance and increasing pressure, time, temperature, and R. F power. Although the surface roughness value decreased by the reduction of the cluster size due to surface etching effect, however, the resistivity increased. This may be due to the surface damage caused by the increasing surface collision energy. It was concluded that the surface roughness could be improved by the Ar plasma treatment, while the resistivity was increased by the surface damage on the substrate.

• 전기의세계
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• v.26 no.2
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• pp.104-110
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• 1977

This paper investigates temperature distribution of plasma jets which used argon gas, and nitrogen gas mixed with argon as working fluids in spectroscopic method, and studies correlations between them main results are as follows; 1) The temperature at the center of plasma jet increases with are current and gas flow, and decreases with magnetic flux density along the axial direction. 2) The changing rate of temperature of plasma jet in the radial direction decreases rapidly beyond 2mm from central axis. 3) Temperature drop rate of plasma jet in the central axis direction appears most apparant beyond 13mm above the nozzle exit. 4) When argon gas mixed with a small amount of nitrogen, plasma temperature increases at same are current compared with the case of argon gas only.

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.705-710
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• 2005

NIL (nanoimprint lithography) technique has demonstrated a high potential for wafer size definition of nanometer as well as micrometer size patterns. During the replication process by NIL, the stiction between the stamp and the polymer is one of major problems. This stiction problem is moi·e important in small sized patterns. An antistiction layer prevents this stiction ana insures a clean demolding process. In this paper, we were using a TCP (transfer coupled plasma) equipment and $C_4F_8$ as a precursor to make a Teflon-like antistiction layer. This antistiction layer was deposited on a 6 inch silicon wafer to have nanometer scale thicknesses. The thickness of deposited antistiction layer was measured by ellipsometry. To optimize the process factor such as table height (TH), substrate temperature (ST), working pressure (WP) and plasma power (PP), we were using a design of experimental (DOE) method. The table of full factorial arrays was set by the 4 factors and 2 levels. Using this table, experiments were organized to achieve 2 responses such as deposition rate and non-uniformity. It was investigated that the main effects and interaction effects between parameters. Deposition rate was in proportion to table height, working pressure and plasma power. Non-uniformity was in proportion to substrate temperature and working pressure. Using a response optimization, we were able to get the optimized deposition condition at desired deposition rate and an experimental deposition rate showed similar results.

• Journal of the Korean institute of surface engineering
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• v.50 no.4
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• pp.272-276
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• 2017

The response of AISI 310 type austenitic stainless steel to the novel low temperature plasma carburizing process has been investigated in this work. This grade of stainless steel shows better corrosion resistance and high temperature oxidation resistance due to its high chromium and nickel content. In this experiment, plasma carburizing was performed on AISI 310 stainless steel in a D.C. pulsed plasma ion nitriding system at different temperatures in $H_2-Ar-CH_4$ gas mixtures. The working pressure was 4 Torr (533Pa approx.) and the applied voltage was 600 V during the plasma carburizing treatment. The hardness of the samples was measured by using a Vickers micro hardness tester with the load of 100 g. The phase of carburized layer formed on the surface was confirmed by X-ray diffraction. The resultant carburized layer was found to be precipitation free and resulted in significantly improved hardness and corrosion resistance.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.504-509
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• 2017

In order to improve corrosion resistance for cast stainless steel in seawater, the characteristics of corrosion resistance after plasma ion nitriding was investigated. Plasma ion nitriding process was conducted in a mixture of nitrogen of 25% and hydrogen of 75% at substrate temperature ranging from 350 to $500^{\circ}C$ for 10 hours using pulsed-DC glow discharge plasma with working pressure of 250 Pa in vacuum condition. Corrosion tests were carried out for as-received and plasma ion nitrided specimens. The corrosion characteristics were investigated by measurement of weight loss and observation of surface morphology. In anodic polarization experiment, relatively less damage depth and weight loss were presented at a nitrided temperature of $400^{\circ}C$, attributing to the formation of S-phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.85-89
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• 2021

High reliability thin film transistors are important factors for next-generation displays. The reliability of transparent a-IGZO semiconductors is being actively studied for display applications. A plasma treatment can fill the oxygen vacancies in the channel layer and the channel layer/insulating layer interface so that the device can work stably under a bias voltage. This paper studies the effect of plasma treatment on the performance of a-IGZO TFT devices. The influence of different plasma gases on the electrical parameters of device and its working reliability are reviewed. The article mentions argon, fluorine, hydrogen and several ways of processing in the atmosphere. Among these methods, F (fluorine) plasma treatment can maximize equipment reliability. It is expected that the presented results will form a basis for further research to improve the reliability of a-IGZO TFT.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.1
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• pp.153-161
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• 1993

Heat transfer processes in the combustion chamber of a pebble bed regenerative heat exchanger for MHD power generation has been analyzed numerically for heating, evacuation argon heating periods individually. The calculated result well explain the measured temperature change at the top of the pebble bed. The analytical result point out that the length of evacution period and the geometry optimization both for the combustion chamber and the heat storage bed are very important factors for the improvement of thermal performance in MHD power generation.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1519-1528
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• 2018

The objective of the present study is the development of a comprehensive air chemical kinetic model that includes 11 species and 54 chemical reactions for the numerical investigation of air nonequilibrium inductively coupled plasmas. The two-dimensional, compressible Navier-Stokes equations coupled with the electromagnetic-field equations were employed to describe the fundamental characteristics of an inductive plasma. Dunn-Kangs 32 chemical-reaction model of air was reconstructed and used as a comparative model. The effects of the different chemical kinetic models on the flow field were analyzed and discussed at identical/different working pressures. The results theoretically indicate that no matter the working pressure is low or high, the use of the 54 chemical kinetic model presented in this study is a better choice for the numerical simulation of a nonequilibrium air ICP.