• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.3 no.3
• /
• pp.569-577
• /
• 1999

A wideband RF receiver for satellite mobile communications system was fabricated and evaluated of performance in low noise amplifier and high gain amplifier. The low noise amplifier used to the resistive decoupling and self-bias circuits. The low noise amplifier is fabricated with both the RF circuits and the self-bias circuits. Using a INA-03184, the high gain amplifier consists of matched amplifier type. The active bias circuitry can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilized resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 55 dB in gain, 50.83 dBc in a spurious level and less than 1.8 : 1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio is a 43.15 dB/Hz at a 1 KHz from 1537.5 MHz.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.12
• /
• pp.45-51
• /
• 2011

This paper presents a wideband low-noise amplifier (LNA) covering 800MHz~5.8GHz for various wireless communication standards by utilizing in a 0.13um CMOS technology. Particularly, the LNA consists of two stages to improve the low-noise characteristics, that is, a cascode input stage and an output buffer with noise cancellation technique. Also, a feedback resistor is exploited to help achieve wideband impedance matching and wide bandwidth. Measure results demonstrate the bandwidth of 811MHz~5.8GHz, the maximum gain of 11.7dB within the bandwidth, the noise figure of 2.58~5.11dB. The chip occupies the area of $0.7{\times}0.9mm^2$, including pads. DC measurements reveal the power consumption of 12mW from a single 1.2V supply.

• Journal of electromagnetic engineering and science
• /
• v.9 no.2
• /
• pp.78-84
• /
• 2009

This paper represents the effects of drain bias on the linearity and efficiency of an analog pre-distortion power amplifier(PA) for wideband code division multiple access(WCDMA) repeater applications. For verification, an analog predistorter(APD) with three-branch nonlinear paths for memory-effect compensation is implemented and a class-AB PA is fabricated using a 30-W Si LOMaS. From the measured results, at an average output power of 33 dBm(lO-dB back-off power), the PA with APD shows the adjacent channel leakage ratio(ACLR, ${\pm}$5 MHz offset) of below -45.1 dBc, with a drain efficiency of 24 % at the drain bias voltage($V_{DD}$) of 18 V. This compared an ACLR of -36.7 dEc and drain efficiency of 14.1 % at the $V_{DD}$ of 28 V for a PA without APD.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.17 no.6 s.109
• /
• pp.538-545
• /
• 2006

In this paper, an asymmetric high power extended Doherty amplifier for WCDMA base-station applications is presented. The amplifier has an extended peak efficiency over 9 dB of output power and a linear dynamic range characteristic. To realize the peak efficiency extension and linear dynamic range characteristic, a two times larger peaking device compared to the main device, and an unequal power divider are used. From the experimental results of 1FA WCDMA signal, this amplifier has an efficiency of 31 % and an ACLR of -35 dBc is achieved at 9 dB back-off from P1 dB.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.5 no.1
• /
• pp.166-172
• /
• 2001

A RF wideband receiver for INMARSAT-B satellite communications system was composed of low noise amplifier and high gain amplifier, The low noise amplifier used to the resistive decoupling circuit for input impedance matching and self-bias circuits for low noise. The high gain amplifier consists of matched amplifier type to improve receiver gain. The active bias circuit can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilization resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 60 dB in gain and less than 1.8:1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio which is input signal level -126.7 dB m at 1537.5 MHz is a 45.23 dB /Hz at a 1.02 kHz.

• The Journal of the Acoustical Society of Korea
• /
• v.31 no.7
• /
• pp.480-486
• /
• 2012

In the design of electro acoustic transducer, power factor improvement circuit is more required rather than impedance matching if the driving power amplifier has little inner resistance. Many research results have been focused on the power matching circuit designing for transferring maximum power in the wideband. There are few results in the designing study on the power factor improvement for the wide band electro acoustic transducer. In this paper, we propose a new design method on the power factor improvement for the wide band electro acoustic transducer. The proposed method consists of two steps, the chebyschev matching method and the constrained optimization, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.38B no.12
• /
• pp.967-975
• /
• 2013

In the design of underwater electro acoustic transducer, power factor improvement circuit is more required rather than impedance matching if the driving power amplifier has little inner resistance. Many research results have been focused on the power matching circuit designing for transferring maximum power in the wideband. There are few results in the designing study on the power factor improvement for the wide band underwater electro acoustic transducer. In this paper, we set up a new design method on the power factor improvement for the wide band electro acoustic transducer, and confirm its feasibility by the experiments.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.22 no.4
• /
• pp.67-72
• /
• 2022

This study presents the design of power amplifier (PA) in 60 nm GaN/Si HEMT technology. A customized transistor model enables the designing circuits operating at W-band. The all matching network of the PA was composed of equivalent transformer circuit to reduce matching loss. And then, equivalent transformer is several advantages without any additional inductive devices so that a wideband power characteristic can be achieved. The designed die area is 3900 ㎛ × 2300 ㎛. The designed results at center frequency achieved the small signal gain of 15.9 dB, the saturated output power (Psat) of 29.9 dBm, and the power added efficiency (PAE) of 24.2% at the supply voltage of 12 V.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.12
• /
• pp.77-84
• /
• 2007

In this parer, a wideband low-noise amplifier (LNA) has been realized in a 0.18mm CMOS technology for the applications of subsampling direct-conversion RF receivers. By exploiting the inverter-type transimpedance input stage with a 3rd-order Chebyshev matching network, the wideband LNA demonstrates the measured results of the -3dB bandwidth of 5.35GHz, the power gain (S21) of $12\sim18dB$, the noise figure (NF) of $6.9\sim10.8dB$, and the broadband input/output impedance matching of less than -10dB/-24dB within the bandwidth, respectively. The chip dissipates 32.4mW from a single 1.8V supply, and occupies the area of $0.56\times1.0mm^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.21 no.10
• /
• pp.1143-1153
• /
• 2010

In this paper, we propose an alternative method to increase the distortion cancellation bandwidth of an analog RF feedback power amplifier by using a negative group delay circuit(NGDC). A limited distortion cancellation bandwidth due to the group delay(GD) mismatch discouraged the use of feedback technique in spite of its powerful linearization performance. With the fabricated NGDC with positive phase slope over frequency, the feedback amplifier of the proposed topology experimentally achieved adjacent channel leakage ratio(ACLR) improvement of 15 dB over 50 MHz bandwidth at wideband code division multiple access(WCDMA) downlink band when tested with 2-carrier WCDMA signal. At an average output power of 28 dBm, ACLR of 25.1 dB is improved to obtain -53.2 dBc at 5 MHz offset.