• Title/Summary/Keyword: Wet Process

Search Result 1,258, Processing Time 0.026 seconds

Effect of Aging Process and Time on Physicochemical and Sensory Evaluation of Raw Beef Top Round and Shank Muscles Using an Electronic Tongue

  • Kim, Ji-Han;Kim, Dong-Han;Ji, Da-som;Lee, Hyun-Jin;Yoon, Dong-Kyu;Lee, Chi-Ho
    • Food Science of Animal Resources
    • /
    • v.37 no.6
    • /
    • pp.823-832
    • /
    • 2017
  • The objective of this study was to determine the effect of aging method (dry or wet) and time (20 d or 40 d) on physical, chemical, and sensory properties of two different muscles (top round and shank) from steers (n=12) using an electronic tongue (ET). Moisture content was not affected by muscle types and aging method (p>0.05). Shear force of dry aged beef was significantly decreased compared to that of wet aged beef. Most fatty acids of dry aged beef were significantly lower than those of wet aged beef. Dry aged shank muscles had more abundant free amino acids than top round muscles. Dry-aging process enhanced tastes such as umami and saltiness compared to wet-aging process according to ET results. Dry-aging process could enhance the instrumental tenderness and umami taste of beef. In addition, the taste of shank muscle was more affected by dry-aging process than that of round muscle.

Manufacturing SiNx Extreme Ultraviolet Pellicle with HF Wet Etching Process (HF 습식 식각을 이용한 극자외선 노광 기술용 SiNx)

  • Kim, Ji Eun;Kim, Jung Hwan;Hong, Seongchul;Cho, HanKu;Ahn, Jinho
    • Journal of the Semiconductor & Display Technology
    • /
    • v.14 no.3
    • /
    • pp.7-11
    • /
    • 2015
  • In order to protect the patterned mask from contamination during lithography process, pellicle has become a critical component for Extreme Ultraviolet (EUV) lithography technology. According to EUV pellicle requirements, the pellicle should have high EUV transmittance and robust mechanical property. In this study, silicon nitride, which is well-known for its remarkable mechanical property, was used as a pellicle membrane material to achieve high EUV transmittance. Since long silicon wet etching process time aggravates notching effect causing stress concentration on the edge or corner of etched structure, the remaining membrane is prone to fracture at the end of etch process. To overcome this notching effect and attain high transmittance, we began preparing a rather thick (200 nm) $SiN_x$ membrane which can be stably manufactured and was thinned into 43 nm thickness with HF wet etching process. The measured EUV transmittance shows similar values to the simulated result. Therefore, the result shows possibilities of HF thinning processes for $SiN_x$ EUV pellicle fabrication.

Developing Low Cost, High Throughput Si Through Via Etching for LED Substrate (LED용 Si 기판의 저비용, 고생산성 실리콘 관통 비아 식각 공정)

  • Koo, Youngmo;Kim, GuSung;Kim, Sarah Eunkyung
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.19 no.4
    • /
    • pp.19-23
    • /
    • 2012
  • Silicon substrate for light emitting diodes (LEDs) has been the tendency of LED packaging for improving power consumption and light output. In this study, a low cost and high throughput Si through via fabrication has been demonstrated using a wet etching process. Both a wet etching only process and a combination of wet etching and dry etching process were evaluated. The silicon substrate with Si through via fabricated by KOH wet etching showed a good electrical resistance (${\sim}5.5{\Omega}$) of Cu interconnection and a suitable thermal resistance (4 K/W) compared to AlN ceramic substrate.

Unsteady Wet Steam Flow Measurements in a Low-Pressure Test Steam Turbine

  • Duan, Chongfei;Ishibashi, Koji;Senoo, Shigeki;Bosdas, Ilias;Mansour, Michel;Kalfas, Anestis I.;Abhari, Reza S.
    • International Journal of Fluid Machinery and Systems
    • /
    • v.9 no.1
    • /
    • pp.85-94
    • /
    • 2016
  • An experimental study is conducted for unsteady wet steam flow in a four-stage low-pressure test steam turbine. The measurements are carried out at outlets of the last two stages by using a newly developed fast response aerodynamic probe. This FRAP-HTH probe (Fast Response Aerodynamic Probe - High Temperature Heated) has a miniature high-power cartridge heater with an active control system to heat the probe tip, allowing it to be applied to wet steam measurements. The phase-locked average results obtained with a sampling frequency of 200 kHz clarify the flow characteristics, such as the blade wakes and secondary vortexes, downstream from the individual rotational blades in the wet steam environment.

Fabrication and Characterization of Cf/SiC Composite with BN Interphase Coated by Wet Chemical Process (습식법으로 제조된 BN 중간층을 가진 Cf/SiC 복합재의 제조 및 물성 평가)

  • Koo, Jun-mo;Kim, Kyung Ho;Han, Yoonsoo
    • Journal of the Korean institute of surface engineering
    • /
    • v.50 no.6
    • /
    • pp.523-530
    • /
    • 2017
  • In this study, we developed the h-BN interphase for ceramic matrix composites (CMCs) through a wet chemical coating method, which has excellent price competitiveness and is a simple process as a departure from the existing high cost chemical vapor deposition method. The optimum condition for nitriding an h-BN interphase using boric acid and urea as precursors were derived, and the h-BN interphase coating through a wet method on a carbon preform of 2.5 D was conducted to apply the optimum conditions to the CMCs. In order to control the coating property via the wet coating method, four parameters were investigated such as dipping time of the specimen in the precursor solution, the ratio of boric acid and urea in the precursor, the concentration of solution where the precursor was dissolved, and the cycle of dipping and dry process. The CMCs was fabricated through polymer impregnation and pyrolysis (PIP) processes and a three-point flexural strength test was conducted to verify the role of the coated h-BN interphase.

A Study on ILD(Interlayer Dielectric) Planarization of Wafer by DHF (DHF를 적용한 웨이퍼의 층간 절연막 평탄화에 관한 연구)

  • Kim, Do-Youne;Kim, Hyoung-Jae;Jeong, Hae-Do;Lee, Eun-Sang
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.19 no.5
    • /
    • pp.149-158
    • /
    • 2002
  • Recently, the minimum line width shows a tendency to decrease and the multi-level increases in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. However there are several defects in CMF, such as micro-scratches, abrasive contaminations and non-uniformity of polished wafer edges. Wet etching process including spin-etching can eliminate the defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(Interlayer-Dielectric) was removed by CMP and wet etching process using DHF(Diluted HF) in order to investigate the possibility of planrization by wet etching mechanism. In the thin film wafer, the results were evaluated from the viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And the pattern step heights were also compared for the purpose of planarity characterization of the patterned wafer. Moreover, Chemical polishing process which is the wet etching process with mechanical energy was introduced and evaluated for examining the characteristics of planarization.

Optimization of an Ozone-based Advanced Oxidation Process for the Simultaneous Removal of Particulate Matters and Nitrogen Oxides in a Semiconductor Fabrication Process (반도체 제조공정 미세먼지-질소산화물 동시 저감을 위한 오존 고속산화공정 최적화 연구)

  • Uhm, Sunghyun;Lee, Seung Jun;Ko, Eun Ha;Hong, Gi Hoon;Hwang, Sangyeon
    • Applied Chemistry for Engineering
    • /
    • v.32 no.6
    • /
    • pp.659-663
    • /
    • 2021
  • 10 m3/min (CMM) multi-pollutants abatement system was successfully developed by effectively integrating ozone oxidation, wet scrubbing, and wet electrostatic precipitation for the simultaneous removal of particulate matters (PMs) and NOx in a semiconductor fabrication process. The sophisticated control and optimization of operating parameters were conducted to maximize the destruction and removal efficiency of NOx. In particular, the stability test of a wet electrostatic precipitator was carried out in parallel for 30 days to validate the reliability of core parts including a power supply. An O3/NO ratio, which is the most important operating parameter, was optimized to be about 1.5 and the optimization of wet scrubbing with a reducing agent made it possible to analyze the contribution of neutralization reaction.

Surface Energy of Graphene Transferred by Wet and Dry Transfer Methods (전사 방법에 따른 그래핀의 표면 에너지 변화)

  • Yoon, Min-Ah;Kim, Chan;Won, Sejeong;Jung, Hyun-June;Kim, Jae-Hyun;Kim, Kwang-Seop
    • Tribology and Lubricants
    • /
    • v.35 no.1
    • /
    • pp.9-15
    • /
    • 2019
  • Graphene is a fascinating material for fabricating flexible and transparent devices owing to its thickness and mechanical properties. To utilize graphene as a core material for devices, the transfer process of graphene is an inevitable step. The transfer process can be classified into wet and dry methods depending on the surrounding environment. The adhesion between graphene and a target substrate determines the success or failure of the transfer process. As the surface energy of graphene is an important parameter that provides adhesion, it is useful to estimate the surface energy to understand the mechanisms of the transfer process. However, the exact surface energy of graphene is still disputed because the wetting transparency of graphene depends on the polarity of the liquid and target substrate. Previously reported results use graphene transferred by the wet method. However, there are few reports on the surface energy of graphene transferred by the dry method. In this study, the surface energy of graphene transferred by the wet and dry methods is estimated. Wetting transparency occurs for certain combinations of liquids and substrates. For graphene on a polar substrate, the surface energy decreases by 25 and 35% for the wet and dry transfer methods, respectively. However, the surface energy of graphene on dispersive substrates decreases by ~10% regardless of the transfer method. In conclusion, the surface energy of graphene is $36{\sim}38mJ/m^2$, and differs depending on the transfer method and polarity of the substrate.

Study on Cooling Rates and Mechanical Properties of H.T. Steel Plates in the Underwater Wet arc welding (고장력강의 습식 수중 아크용접에 대한 냉각율과 기계적 특성에 관한 연구)

  • 김민남
    • Journal of Ocean Engineering and Technology
    • /
    • v.2 no.1
    • /
    • pp.125-134
    • /
    • 1988
  • The feasibility for improving the cooling rates and mechanical properties of wet welding process is experimentally investigated by using new developed underwater wet electrodes and H.T. steel plates. Main results of this experimental study can be summarized as follows; 1) By shielding around weld arc surrounding, the cooling rates resulting from wet welds with developed electrodes on TMCP steel plates can be lower than of non-shielded wet welds. 2)A high quality of mechanical properties of wet welds on TMCP steel plates can be obtained with shielded weld arc surrounding.

  • PDF

2.22-inch qVGA a-Si TFT-LCD Using a 2.5 um Fine-Patterning Technology by Wet Etch Process

  • Lee, Jae-Bok;Park, Sun;Heo, Seong-Kweon;You, Chun-Ki;Min, Hoon-Kee;Kim, Chi-Woo
    • Journal of Information Display
    • /
    • v.7 no.3
    • /
    • pp.1-4
    • /
    • 2006
  • 2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (a-Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated as the 2.5 um fine pattern formation technique is integrated with high thermal photo-resist (PR) development. In addition, a novel concept of unique a-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um fine-patterning is a considerably significant technology to obtain higher aperture ratio for higher resolution a-Si TFT-LCD panel realization.