• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.57-64
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• 2000

As integrated circuits become more complex, the number of I/O connections per chip grow. Conventional wire-bonding, lead-frame mounting techniques are unable to keep up. The space saved by shrinking die size is lost when the die is packaged in a huge device with hundreds of leads. The solution is bumps; gold, conductive adhesive, but most importantly solder bumps. Virtually every semiconductor manufacturer in the world is using or planning to use bump technology fur their larger and more complex devices. Several wafer-bumping processes used in the manufacture of bumped wafer. Some of the more popular techniques are evaporative, stencil or screen printing, electroplating, electrodes nickel, solder jetting, stud bumping, decal transfer, punch and die, solder injection or extrusion, tacky dot process and ball placement. This paper will discuss the process steps for bumping wafers using these techniques. Critical cleaning is a requirement for each of these processes. Key contaminants that require removal are photoresist and flux residue. Removal of these contaminants requires wet processes, which will not attack, wafer metallization or passivation. research has focused on enhanced cleaning solutions that meet this critical cleaning requirement. Process parameters defining time, temperature, solvency and impingement energy required to solvate and remove residues from bumped wafers will be presented herein.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.51-59
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• 2000

As integrated circuits become more complex, the number of I/O connections per chip grow. Conventional wire-bonding, lead-frame mounting techniques are unable to keep up. The space saved by shrinking die size is lost when the die is packaged in a huge device with hundreds of leads. The solution is bumps; gold, conductive adhesive, but most importantly solder bumps. Virtually every semiconductor manufacturer in the world is using or planning to use bump technology for their larger and more complex devices. Several wafer-bumping processes used in the manufacture of bumped wafer. Some of the more popular techniques are evaporative, stencil or screen printing, electroplating, electroless nickel, solder jetting, stud humping, decal transfer, punch and die, solder injection or extrusion, tacky dot process and ball placement. This paper will discuss the process steps for bumping wafers using these techniques. Critical cleaning is a requirement for each of these processes. Key contaminants that require removal are photoresist and flux residue. Removal of these contaminants requires wet processes, which will not attack, wafer metallization or passivation. Research has focused on enhanced cleaning solutions that meet this critical cleaning requirement. Process parameters defining time, temperature, solvency and impingement energy required to solvate and remove residues from bumped wafers will be presented herein.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.10
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• pp.1217-1223
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• 2011

In this paper, the dielectric barrier discharge plasma generator has been studied for producing of the high concentration ozone gas. Proposed plasma generator has the structure of extremely narrow discharge air gap(0.15mm) in order to realize the high electric field discharge. We investigate the performance of the dielectric barrier discharge plasma generator experimentally and the results show that the generator has very high ozone concentration characteristics of 13.7[wt%/$O_2$] at the oxygen flow rate of 1[${\ell}$/min] of each discharge cell. So, we confirmed that the proposed plasma generator is suitable for the high concentration ozone production facility of the eco-friendly ozone functional water cleaning system in the electronic components cleaning process.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.579-585
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DI-O3 water) in semiconductor wet cleaning process to replace the conventional RCA methods has been studied. In this paper, we propose the water-electrode type ozone generator which has the ozone gas characteristics of the high concentration and high purity to produce the high concentration DI-O3 water for the silicon wafer surface cleaning process. The ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. We investigate the performance of the proposed ozone generator which has the design goal of the concentration of 7[wt%] and ozone generation quantity of 6[g/hr] at flow rate of 1[$\ell$/min). The experiment results show that the water electrode type ozone generator has the characteristics of 8.48[wt%] of concentration, 8.08[g/hr] of generation quantity and 76.2[g/kWh] of yield and it's possible to use the proposed ozone generator for the DI-O3 water cleaning process of silicon wafer surface.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1450-1452
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• 1996

In order to optimize the characteristics of gate insulator for FED(field emission device), we investigated the effect of wet-etching process on the gate insulator for fabrication of FED. We used the general three types of etchants for fabrication of the metal tip FEA(field emitter array), they are MO and oxide etchants to form the gate hole, and Al etchant to remove the release layer. In the result of the breakdown field of the insulator by the measure of the current-voltage characteristics, the breakdown field of insulator for immersing in oxide etchant was rapidly lowering with increasing etching time, but that for immersing in Al etchant was slow lowering. Also, in comparing cleaning with non-cleaning samples, the breakdown field of the cleaning samples was higher than that of non-cleaning samples.

• Journal of the Korean Society of Safety
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• v.35 no.6
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• pp.85-92
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• 2020

Wet Scrubber reacts the incoming pollutant gas with cleaning water (water + absorbent) to absorb pollutants and release the clean air to the atmosphere. Wet scrubbers and packed tower scrubbers using this principle are widely used in businesses that emit acid gases. In particular, in the etching process using hydrochloric acid (HCl), alkaline washing water (NaOH) having a pH of about 8 to 11 is used to absorb a large amount of acid gas. However, These salts are attached to the injection nozzle (nozzle), filling material (packing), and the demister (Demister), causing air pollution, human damage, and inoperability due to clogging and acid gas discharge. Therefore, In this study, an improvement plan was proposed to manage the washing water with pH 3~4 acidic washing water. The test method takes samples from the Wet Scrubber flue measurement laboratory twice a month for 1 year. Hydrogen chloride (HCl) concentration (ppm) was measured, and nozzle clogging and scale conditions were measured, compared, and analyzed through a differential pressure gauge and a pressure gauge. As a result of the check, it was visually confirmed that the scale was reduced to 50% or less in the spray nozzle, filler, and demister. In addition, the emission limit of hydrogen chloride in accordance with the Enforcement Regulation of the Air Quality Conservation Act [Annex 8] met 3 ppm or less. Therefore, even if the washing water is operated in an acidic pH range of 3 to 4, it is expected to reduce air pollution and human damage due to clogging of internal parts, and it is expected to reduce maintenance costs such as regular cleaning or replacement of parts.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.45-50
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• 2021

As the difficulty of flip chip products increases, there is a growing interest in the material of flux, which is safe from the solder wetting and reliability. In the case of no clean flux, there is merit in terms of process efficiency because there is no cleaning process. But Cu migration and delamination can be occurred if the residue remains after the reflow process. In this study, major element materials, solvent and activator, are changed and confirmed effect of non-wet and reliability in the package environment. Stability of materials were secured through storage stability evaluation, and we found out non-wet zero materials through the application of two types of solvent and activator with different boiling point and the increase of activator content. After reliability test, no delamination was found in the plane analysis, which secured the final composition of low residue flux.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.8
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• pp.3597-3601
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• 2013

In this study, a wet cleaning process, P II, using aqua-regia and sulfuric acid mixture with oxidant agent ($K_2S_2O_8$, $P_2O_5$, $KMnO_4$, $H_2O_2$ etc) is proposed to remove the metastable phase of graphite such as graphene and DLC for high quality synthetic diamonds. The process employed the conventional acid cleaning process (P I) as well as P I+P II to remove the graphite related impurities from the 200um-diamond powders synthesized at 7GPa-$1500^{\circ}C$-5minutes. The degree of cleaning after P I and P I+P II has been observed by naked-eye, optical microscopy, micro-Raman spectroscopy, and TGA-DTA. After P I+P II, the color of diamond became more vividly yellow with enhanced saturation with naked eye and optical microscopy analysis. Moreover, the disappearance of diamond-like-carbon (DLC) peak ($1440cm^{-1}$) observed by Raman spectroscopy confirmed the decrease in amount of remaining impurities. TGA-DTA results showed that the graphite impurities first started to dissolve at $770.91^{\circ}C$ after PI process. However, the pyrolysis started at $892.18^{\circ}C$ after P I+P II process because of the dissolution of pure diamonds. This result proved the effective dissolution of the metastable phase of graphite. We expect that the proposed P II process may enhance the quality of diamonds through effective removal of surface impurities.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1240-1247
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• 2003

Water jet nozzle for LCD has been used as a wet cleaning process in many industries. It is necessary for the nozzle to consider cleaning effect and flux. In this paper, we applied the bubble dynamic theory(Rayleight-Plesset equation) to improve the cleaning efficiency. Generally, Rayleigh-Plesset equations for cavitation bubbles are used in analyzing computer simulation for caviting flows. Burst of bubbles causes potential energies and we can use these energies to remove organic and inorganic compounds on the LCD. Therefore, it is necessary to analyze the bubble generations and axiomatic design by computational fluid dynamics(CFD). By comparing the weight matrix of neural networks to the design matrix of axiomatic design, we propose methods to verify designs objectively. The optimal solution could be deduced by the regression analysis using the design parameters.

• Journal of the Korean Society of Costume
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• v.47
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• pp.89-100
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• 1999

This study was carried to a textile conservation process included washing effect fiber analysis such as fiber identification fabric density and thickness color fading and of extracted soils. the following results were obtained. 1. AS a result of investigating to fabric surfaces by S.E.M all of cleaning methods wet cleaning-solvent cleaning in charge system were effective to remove soils from fabrics. 2. The buried fabrics were made of silk few of them were cotton ramie and hemp. 3. According to fabric density and thickness used fabrics were almost medium weight fabrics. 4. Low values of L, a, b indicated that the colors of these fabrics were faded to yellow and brown. 5. The soil components were hydrocarbon-alkane group alkyl alcohol and ketone group.