대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1996년도 하계학술대회 논문집 C
- /
- Pages.1450-1452
- /
- 1996
Metal tip FEA 의 제조시 식각 용액이 게이트 산화막에 미치는 영향
The effect of wet-etching process on the gate insulator for fabrication of metal tip FEA
- 정유호 (서울시립대학교 전자공학과) ;
- 정재호 (한국과학기술연구원 정보전자연구부) ;
- 박흥우 (한국과학기술연구원 정보전자연구부) ;
- 송만호 (한국과학기술연구원 정보전자연구부) ;
- 이윤희 (한국과학기술연구원 정보전자연구부) ;
-
주병권
(한국과학기술연구원 정보전자연구부)
;
- 오명환 (한국과학기술연구원 정보전자연구부) ;
- 김철주 (서울시립대학교 전자공학과)
- Jung, Yu-Ho (Department of Electronic Engineering, Seoul City University) ;
- Jung, Jae-Hoon (Division of Electronics and Information Technology, KIST) ;
- Park, Heung-Woo (Division of Electronics and Information Technology, KIST) ;
- Song, Man-Ho (Division of Electronics and Information Technology, KIST) ;
- Lee, Yun-Hi (Division of Electronics and Information Technology, KIST) ;
-
Ju, Byeong-Kwon
(Division of Electronics and Information Technology, KIST)
;
- Oh, Myung-Hwan (Division of Electronics and Information Technology, KIST) ;
- Kim, Chul-Ju (Department of Electronic Engineering, Seoul City University)
- 발행 : 1996.07.22
초록
In order to optimize the characteristics of gate insulator for FED(field emission device), we investigated the effect of wet-etching process on the gate insulator for fabrication of FED. We used the general three types of etchants for fabrication of the metal tip FEA(field emitter array), they are MO and oxide etchants to form the gate hole, and Al etchant to remove the release layer. In the result of the breakdown field of the insulator by the measure of the current-voltage characteristics, the breakdown field of insulator for immersing in oxide etchant was rapidly lowering with increasing etching time, but that for immersing in Al etchant was slow lowering. Also, in comparing cleaning with non-cleaning samples, the breakdown field of the cleaning samples was higher than that of non-cleaning samples.
키워드