• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.57-64
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• 2000

As integrated circuits become more complex, the number of I/O connections per chip grow. Conventional wire-bonding, lead-frame mounting techniques are unable to keep up. The space saved by shrinking die size is lost when the die is packaged in a huge device with hundreds of leads. The solution is bumps; gold, conductive adhesive, but most importantly solder bumps. Virtually every semiconductor manufacturer in the world is using or planning to use bump technology fur their larger and more complex devices. Several wafer-bumping processes used in the manufacture of bumped wafer. Some of the more popular techniques are evaporative, stencil or screen printing, electroplating, electrodes nickel, solder jetting, stud bumping, decal transfer, punch and die, solder injection or extrusion, tacky dot process and ball placement. This paper will discuss the process steps for bumping wafers using these techniques. Critical cleaning is a requirement for each of these processes. Key contaminants that require removal are photoresist and flux residue. Removal of these contaminants requires wet processes, which will not attack, wafer metallization or passivation. research has focused on enhanced cleaning solutions that meet this critical cleaning requirement. Process parameters defining time, temperature, solvency and impingement energy required to solvate and remove residues from bumped wafers will be presented herein.

• 마이크로전자및패키징학회지
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• 제7권1호
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• pp.51-59
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• 2000

As integrated circuits become more complex, the number of I/O connections per chip grow. Conventional wire-bonding, lead-frame mounting techniques are unable to keep up. The space saved by shrinking die size is lost when the die is packaged in a huge device with hundreds of leads. The solution is bumps; gold, conductive adhesive, but most importantly solder bumps. Virtually every semiconductor manufacturer in the world is using or planning to use bump technology for their larger and more complex devices. Several wafer-bumping processes used in the manufacture of bumped wafer. Some of the more popular techniques are evaporative, stencil or screen printing, electroplating, electroless nickel, solder jetting, stud humping, decal transfer, punch and die, solder injection or extrusion, tacky dot process and ball placement. This paper will discuss the process steps for bumping wafers using these techniques. Critical cleaning is a requirement for each of these processes. Key contaminants that require removal are photoresist and flux residue. Removal of these contaminants requires wet processes, which will not attack, wafer metallization or passivation. Research has focused on enhanced cleaning solutions that meet this critical cleaning requirement. Process parameters defining time, temperature, solvency and impingement energy required to solvate and remove residues from bumped wafers will be presented herein.

• 한국정밀공학회지
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• 제28권10호
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• pp.1217-1223
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• 2011

In this paper, the dielectric barrier discharge plasma generator has been studied for producing of the high concentration ozone gas. Proposed plasma generator has the structure of extremely narrow discharge air gap(0.15mm) in order to realize the high electric field discharge. We investigate the performance of the dielectric barrier discharge plasma generator experimentally and the results show that the generator has very high ozone concentration characteristics of 13.7[wt%/$O_2$] at the oxygen flow rate of 1[${\ell}$/min] of each discharge cell. So, we confirmed that the proposed plasma generator is suitable for the high concentration ozone production facility of the eco-friendly ozone functional water cleaning system in the electronic components cleaning process.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권12호
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• pp.579-585
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DI-O3 water) in semiconductor wet cleaning process to replace the conventional RCA methods has been studied. In this paper, we propose the water-electrode type ozone generator which has the ozone gas characteristics of the high concentration and high purity to produce the high concentration DI-O3 water for the silicon wafer surface cleaning process. The ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. We investigate the performance of the proposed ozone generator which has the design goal of the concentration of 7[wt%] and ozone generation quantity of 6[g/hr] at flow rate of 1[$\ell$/min). The experiment results show that the water electrode type ozone generator has the characteristics of 8.48[wt%] of concentration, 8.08[g/hr] of generation quantity and 76.2[g/kWh] of yield and it's possible to use the proposed ozone generator for the DI-O3 water cleaning process of silicon wafer surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1450-1452
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• 1996

In order to optimize the characteristics of gate insulator for FED(field emission device), we investigated the effect of wet-etching process on the gate insulator for fabrication of FED. We used the general three types of etchants for fabrication of the metal tip FEA(field emitter array), they are MO and oxide etchants to form the gate hole, and Al etchant to remove the release layer. In the result of the breakdown field of the insulator by the measure of the current-voltage characteristics, the breakdown field of insulator for immersing in oxide etchant was rapidly lowering with increasing etching time, but that for immersing in Al etchant was slow lowering. Also, in comparing cleaning with non-cleaning samples, the breakdown field of the cleaning samples was higher than that of non-cleaning samples.

• 한국안전학회지
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• 제35권6호
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• pp.85-92
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• 2020

Wet Scrubber reacts the incoming pollutant gas with cleaning water (water + absorbent) to absorb pollutants and release the clean air to the atmosphere. Wet scrubbers and packed tower scrubbers using this principle are widely used in businesses that emit acid gases. In particular, in the etching process using hydrochloric acid (HCl), alkaline washing water (NaOH) having a pH of about 8 to 11 is used to absorb a large amount of acid gas. However, These salts are attached to the injection nozzle (nozzle), filling material (packing), and the demister (Demister), causing air pollution, human damage, and inoperability due to clogging and acid gas discharge. Therefore, In this study, an improvement plan was proposed to manage the washing water with pH 3~4 acidic washing water. The test method takes samples from the Wet Scrubber flue measurement laboratory twice a month for 1 year. Hydrogen chloride (HCl) concentration (ppm) was measured, and nozzle clogging and scale conditions were measured, compared, and analyzed through a differential pressure gauge and a pressure gauge. As a result of the check, it was visually confirmed that the scale was reduced to 50% or less in the spray nozzle, filler, and demister. In addition, the emission limit of hydrogen chloride in accordance with the Enforcement Regulation of the Air Quality Conservation Act [Annex 8] met 3 ppm or less. Therefore, even if the washing water is operated in an acidic pH range of 3 to 4, it is expected to reduce air pollution and human damage due to clogging of internal parts, and it is expected to reduce maintenance costs such as regular cleaning or replacement of parts.

• 마이크로전자및패키징학회지
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• 제28권2호
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• pp.45-50
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• 2021

Flip chip 제품의 난이도 증가에 따라 solder wetting 및 신뢰성 관점에서 강점을 갖는 flux 소재에 대한 관심이 높아지고 있다. 지용성 flux의 경우 별도의 세정 공정이 없기 때문에 공정 효율화 측면에서 유리하나, 리플로우 공정이후 반응을 마친 잔여물이 잔존하게 되는 경우 Cu migration 및 delamination을 발생시킬 수 있다. 본 연구에서는 저잔사 flux 구현을 위해 신규 resin에 적합한 solvent 및 activator를 변경 하였으며, package 환경에서 non-wet 및 신뢰성 개선 유무를 확인하였다. 저장 안정성 평가를 통해 신규 소재에 대한 안정성을 확보하였으며, boiling point가 상이한 solvent와 activator 2종 적용 및 activator 함량 증대를 통해 non-wet 미 발생 flux 소재를 확보하였다. 해당 소재에 대한 신뢰성 검증 이후 평면 분석 결과 flux residue 기인성 delamination 현상은 발견되지 않았으며, 이를 통해 저잔사 flux에 대한 최종 조성을 확보하였다.

• 한국산학기술학회논문지
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• 제14권8호
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• pp.3597-3601
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• 2013

본 연구에서는 고품질의 합성다이아몬드를 얻고자 합성다이아몬드 표면에 잔류하는 그래핀, DLC 등의 흑연계 준안정상을 효과적으로 제거하는 세정공정을 위해 왕수와 황산 외에 $K_2S_2O_8$, $P_2O_5$, $KMnO_4$의 산화제가 들어간 습식세정공정, P II 제안하였다. 이 공정은 기존의 산처리를 이용한 세정공정(P I) 뿐만 아니라 신세정공정(P I+P II)을 함께 사용하여 7GPa-$1500^{\circ}C$-5minutes의 조건 하에서 합성된 200um의 다이아몬드 표면에 잔류하는 흑연과 불순물 등을 제거하기 위해 진행되었다. 이를 육안분석, 광학현미경, 마이크로라만, TGA-DTA를 통하여 확인하였다. 육안분석과 광학현미경 분석 결과 새로운 습식세정공정(P I+P II) 진행 후 합성다이아몬드의 채색이 밝은 노란색으로 개선되었다. 또한 마이크로라만 분석을 통해 $1330cm^{-1}$의 다이아몬드 고유 피크 외에 $1440cm^{-1}$의 흑연계 준안정상인 DLC피크가 사라지는 것을 확인하여 정량적으로 잔류불순물의 양이 줄어든 것을 확인하였다. TGA-DTA 결과, 처리 전(P I only) 흑연계 준안정상이 먼저 분해되어 $770.91^{\circ}C$부터 열분해가 시작되었으나 신세정공정(P I+P II)으로 처리 후 순수한 합성다이아몬드는 $892.18^{\circ}C$부터 시작되어 흑연계 준안정상이 효과적으로 제거된 것을 확인하였다. 이러한 신세정공정은 합성다이아몬드의 잔류불순물제거를 통해 품질향상을 기대할 수 있었다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1240-1247
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• 2003

Water jet nozzle for LCD has been used as a wet cleaning process in many industries. It is necessary for the nozzle to consider cleaning effect and flux. In this paper, we applied the bubble dynamic theory(Rayleight-Plesset equation) to improve the cleaning efficiency. Generally, Rayleigh-Plesset equations for cavitation bubbles are used in analyzing computer simulation for caviting flows. Burst of bubbles causes potential energies and we can use these energies to remove organic and inorganic compounds on the LCD. Therefore, it is necessary to analyze the bubble generations and axiomatic design by computational fluid dynamics(CFD). By comparing the weight matrix of neural networks to the design matrix of axiomatic design, we propose methods to verify designs objectively. The optimal solution could be deduced by the regression analysis using the design parameters.

• 복식
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• 제47권
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• pp.89-100
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• 1999

This study was carried to a textile conservation process included washing effect fiber analysis such as fiber identification fabric density and thickness color fading and of extracted soils. the following results were obtained. 1. AS a result of investigating to fabric surfaces by S.E.M all of cleaning methods wet cleaning-solvent cleaning in charge system were effective to remove soils from fabrics. 2. The buried fabrics were made of silk few of them were cotton ramie and hemp. 3. According to fabric density and thickness used fabrics were almost medium weight fabrics. 4. Low values of L, a, b indicated that the colors of these fabrics were faded to yellow and brown. 5. The soil components were hydrocarbon-alkane group alkyl alcohol and ketone group.