• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.564-567
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• 2004

New address electrode having separated dual electrode is suggested to reduce addressing time in ac PDP. Addressing characteristics of suggested electrode has been investigated in the test panel with high Xe partial pressure. It has been found that both the formative and jitter width of the suggested electrode is improved by 10 -20 % over the wide range of address voltage level compared with the conventional one. The dynamic margin of the panel also greatly improved. The key feature behind this type of structure is that it can extend the controllability of the wall charge distribution during the reset and address discharge without significant increase in capacitive load of address electrode.

• 전기의세계
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• v.27 no.4
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• pp.45-51
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• 1978

A new method of realizing the field effect transistor with a sub-.mu. channel width is described. The sub-.mu. channel width is made possible by etching grooves into n$^{+}$ pn$^{[-10]}$ n$^{[-10]}$ structure and using p region at the wall for the channel region of the Metal-Oxide-Semiconductor transistor (MOST), or by diffusing two different types of impurities through the same diffusion mask and using p region at the surface for the channel region of MOST. When the drain voltage is increased at the pn$^{[-10]}$ drainjunction the depletion layer extends into the n$^{[-10]}$ region instead of into p region; this is also the secret of success to realize the sub-.mu. channel width. As the result of the experimental fabrication, a microwave MOST was obtained. The cut-off frequency was calculated to be 15.4 GHz by Linvill's power equation using the measured capacitances and transconductance.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.6
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• pp.169-172
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• 2003

A design power supply for car audio installation which uses SCR phase control method is able to get output DC 15[V]-100[A] in US wall outlet restricted to input AC 120[V]-15[A]. As the power supply for car audio is tested, output is DC 15[V]-100[A] in ripple voltage 110[mV].

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.5
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• pp.993-998
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• 2011

In this paper we suggest new criteria for the classification of the electrode gap between common and scan electrodes. The electrode gap is categorized as a short, middle, and long gap according to the criteria. Among these structures, we focus on the erase waveform of a mid-gap structure. we report an unstable discharge arising from the erase ramp period in a mid-gap structure. Based on the Vt close curve, we analyze the unstable discharge at various conditions. Our analysis reveals that the unstable discharge is ignited between surface electrodes and caused by un-erased wall charges accumulated on the outer edges of electrodes. By reducing the voltage level of the last sustain pulse, the problem is solved.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.1
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• pp.50-58
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• 2011

In this paper, potential distribution analysis through the six kinds of case studies examined in the environmental conditions change within a limited space, by the power supply system installed. To interpret the potential distribution using electromagnetic field analysis program and the parameters were state of the ground, the outer wall of the configuration state and the presence of human potential distribution was simulated. Potential distribution analysis, the size of nominal voltage, depending on the impedance of human body to be determined on the impact of surprise decision, but if equipped with appropriate protective equipment can be protected from lightning have been confirmed.

• Transactions on Electrical and Electronic Materials
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• v.4 no.4
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• pp.26-29
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• 2003

To discover electrical properties of individual single wall nanotube(SWNT), a number of SWNT-based tubeFETs have been fabricated. The device consists of a single semiconducting SWNT on an insulating substrate, contacted at each end by metal electrodes. It presents high transconductances, and charge storage phenomenon, which is the operations of injecting electrons from the nanotube channel of a tubeFET into charge traps on the surface of the $SiO_2$ gate dielectric, thus shifting the threshold voltage. This phenomenon can be repeated many times, and maintained for the hundreds of seconds at room temperature. We will report this phenomenon as the memory effects of the SWNT, and attempt to use this property for the memory device.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.377-380
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• 2008

In this work, we measured the spatiotemporal surface charge distribution by the longitudinal electro-optic amplitude modulation method with BSO single crystal to investigate the decay and diffusion characteristics of surface charges in three types of MgO. The speed of decay and diffusion of two different kinds doped MgO is compared with those of pure MgO. The difference in the characteristics of the decay and diffusion between the electron and ion surface charges is investigated separately. We found that the rate of ion decay is the major factor that makes the difference of the temporal variation of wall voltage among different types doped MgO.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.101-104
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• 2003

The real test panel with the $200{\mu}m$ discharge gap in a coplanar AC plasma display panel was investigated. The auxiliary electrode was placed between two sustain electrodes and used for providing wall charges and prime particle during sustain period. The luminous efficiency had the maximum value when the voltage of the auxiliary pulses was 20 ${\sim}$ 100[V]. The luminous efficiency of coplanar long-gap discharge with auxiliary electrode was 2.6 times as much as that of the conventional structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.146-149
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• 2004

We have studied a liquid crystal (LC) mode (named locked super homeotropic (LSH)) in which the LCs aligned homeotropically are locked by surrounding walls such as cubic, hexagonal and cylinder. In the device, the vertically aligned LCs tilt down symmetrically around the center of the cell when a voltage is applied and thus it exhibits wide viewing angle. The structure of this LSH mode is suitable for large-sized display panels. since the LCs are locked in micro domains the LCs do not flow to the bottom of the panel by gravity. This mode is applicable to achieve high performance TFT-LCD TV because of high performance characteristics such as high contrast, high brightness, wide-viewing angle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.214-217
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• 2004

현재 PDP는 차세대 대형 평판 표시장치로서 각광을 받고 있으며 빠른 속도로 개발이 진행되고 있다. AC PDP에서 가장 큰 문제는 위도 및 방전효율의 향상과 전력손실의 저감, 높은 contrast의 실현, 제품 가격의 저하 등에 관한 문제이다. 본 연구에서는 벽전압 전달곡선을 이용한 방전 동작 특성에 대해 고찰하고자 한다. 방전 유지전압 주파수가 변화할 때 방전 개시전압이 감소하나 메모리 마진은 거의 동일함을 보였다. Duty 비를 변화시키면 방전개시전압은 감소하는 경향이 있지만 방전유지전압은 거의 일정하였다.