• 한국산학기술학회논문지
• /
• 제10권10호
• /
• pp.2572-2576
• /
• 2009

반도체 양산공정에 사용되는 웨이퍼 프로버의 척은 고온이건 저온이건 항상 일정한 온도균일도가 요구된다. 저온으로 운전 시에 온도분포를 써모커플을 이용하여 측정한 결과 온도균일도를 향상할 필요가 있음을 발견하였다. FLUENT를 이용한 전산해석을 하여 온도분포를 해석하였으며, 이 결과를 이용하여 냉각수 회로 배치의 변경과 국부적인 회로 폭의 확대 등 개선안을 제시하였다. 제시된 개선안과 현재 척의 온도분포를 비교한 결과 온도균일도가 향상되었음을 확인하였다.

• 반도체디스플레이기술학회지
• /
• 제16권3호
• /
• pp.116-120
• /
• 2017

Temperature uniformity of a wafer in a semiconductor process is a very important factor that determines the overall yield. Therefore, it is very important to confirm the temperature characteristics of the chuck surface on which the wafer is lifted. The temperature characteristics of the chuck depend on the external heat source, the shape of the cooling channel inside the chuck, the material on the chuck surface, and so on. In this study, CFD confirms the change of temperature characteristics according to the stacking order of ceramic materials on the chuck surface, and suggests the best lamination method.

• 한국표면공학회지
• /
• 제46권6호
• /
• pp.283-289
• /
• 2013

The experimental study for the temperature uniformity on the wafer using liquid-vapor phase heat transfer mechanism is performed. For the experiment, the heater plate which is consist of stainless steel container, working fluid and electrical heater is designed, manufactured and tested at the range of 600 to $850^{\circ}C$. The results showed that the phase change type heater plate was much more uniform and stable temperature on the heater plate surface and wafer than the uniform heat flux type heater plate at the atmospheric condition. Also, the results of 300 mm outer diameter of heater plate showed that the same temperature uniformity compared with 230 mm.

• 반도체디스플레이기술학회지
• /
• 제17권3호
• /
• pp.85-89
• /
• 2018

Temperature uniformity of a wafer in a semiconductor process is a very important factor that determines the overall yield. Therefore, it is very important to confirm the temperature characteristics of the chuck surface on which the wafer is lifted. The temperature characteristics of the chuck depend on the external heat source, the shape of the cooling channel inside the chuck, the material on the chuck surface, and so on. In this study, CFD confirms the change of temperature characteristics according to the stacking order of ceramic materials and inner coolant path on the chuck surface. Finally this study suggests the best cooling condition of electrostatic chuck.

• 반도체디스플레이기술학회지
• /
• 제16권3호
• /
• pp.1-7
• /
• 2017

Multi-wafer planetary type chemical vapor deposition reactors are widely used in thin film growth and suitable for large scale production because of the high degree of growth rate uniformity and process reproducibility. In this study, a two-dimensional model for estimating the effect of the gap between satellite and wafer on the wafer surface temperature distribution is developed and analyzed using computational fluid dynamics technique. The simulation results are compared with the results obtained from an analytical method. The simulation results show that a drop in the temperature is noticed in the center of the wafer, the temperature difference between the center and wafer edges is about $5{\sim}7^{\circ}C$ for all different ranges of the gap, and the temperature of the wafer surface decreases when the size of the gap increases. The simulation results show a good agreement with the analytical ones which is based on one-dimensional heat conduction model.

• 전자공학회논문지A
• /
• 제31A권7호
• /
• pp.76-84
• /
• 1994

The characteristics of 3 inch wafer scale GaAs epitaxial wafer grown by molecular beam epitaxy for LSI process application were studied. The thickness and doping uniformity are characterized and discussed. The growth temperature and growth rate were $600^{\circ}C$ by pyrometer, and 1 $\mu$m/h, respectively. It was found that thickness and doping uniformity were 3.97% and 4.74% respectively across the full 3 inch diameter GaAs epitaxial layer. Also, ungated MESFETs have been fabricated and saturation current measurement showed 4.5% uniformity on 3 inch, epitaxial layer, but uniformity of threshold voltage increase up to 9.2% after recess process for MESFET device.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2001년도 춘계학술대회 논문집
• /
• pp.566-569
• /
• 2001

Hot Plate is the major unit that it used to remove damp of wafer surface, to strength adhesion of photoresist(PR) and to bake coated PR in FAB process of semiconductor. It is necessary to guarantee the performance of Hot Plate(HP). Therefore, in this study designed and developed the reliability system of HP to measure and estimated thermal uniformity and flatness in temperature setting amplitude $0~250^{\circ}C$. We developed the techniques that measures and analyzes thermal uniformity using infrared thermal vision, and compensates measuring error of flatness using laser displacement sensor. For measuring flatness, we specially makes the measurement stage of 3 axes which adopts the precision encoder. The allowable error of measuring technique is less than thermal uniformity, $\pm 0.1^{\circ}C$ and flatness, $\pm 1mm$. It is expected that the developed system can measure from $\Phi$210(wafer 8") to $\Phi$356(wafer 12") and also can be used in performance test of the Cool Plate and industrial heater, etc.

• 한국정밀공학회지
• /
• 제20권1호
• /
• pp.85-90
• /
• 2003

Removal rate and Within Wafer Non-Uniformity (WIWNU), the most critical issues in Chemical Mechanical Polish (CMP) process, are related to the pressure distribution, wafer shape, slurry flow, mechanical property of pad and etc. Among them, wafer warp generated by other various manufacturing process of wafer may induce the deviation of pressure distribution on the backside of wafer. In the convex shaped wafer the pressure onto the backside of wafer is higher than that of perfectly flat shaped wafer. Besides, such an added pressure is in proportion to the curvature of wafer. That is, the bigger the curvature of wafer becomes the higher the removal rate goes. And the WIWNU is known to be directly related to the pressure distribution on the wafer as well. In other words, the deviation of pressure distribution is in proportion to the WIWNU. In this paper, it is found that the wafer shape may be modified through heating the backside of it and thus properly changed pressure onto the backside of it may improve the WIWNU.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.58-58
• /
• 2009

Uniformity related issues in chemical mechanical polishing (CMP) are within wafer non-uniformity (WIWNU), wafer to wafer non-uniformity (WTWNU), planarity and dishing/erosion. Here, the WIWNU that originates from spatial distribution of independent variables such as temperature, sliding distance, down force and material removal rate (MRR) during CMP, relies to spatial dependency. Among various sources of spatial irregularity, hardness and modulus of pad and surface roughness in sources for pad uniformity are great, especially. So, we investigated the spatial variation of pad surface characteristics using pad measuring system (PMS) and roughness measuring system. Reduced peak height ($R_{pk}$) of roughness parameter shows a strong correlation with the removal rate, and the distribution of relative sliding distance onwafer during polishing has an effect on the variation of $R_{pk}$ and WIWNU. Also, the results of pad wear profile thorough developed pad profiler well coincides with the kinematical simulation of conditioning, and it can contribute for the enhancement of WIWNU in CMP process.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2013년도 춘계학술대회 논문집
• /
• pp.481-482
• /
• 2013