Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on Characteristics of Si doped 3 inch GaAs Epitaxial Layer Grown by MBE for LSI Application

LSI급 소자 제작을 위한 3인치 GaAs MBE 에피택셜 기판의 균일도 특성 연구

  • 이재진 (한국전자통신연구소 반도체연구단) ;
  • 이해권 (한국전자통신연구소 반도체연구단) ;
  • 맹성재 (한국전자통신연구소 반도체연구단) ;
  • 김보우 (한국전자통신연구소 반도체연구단) ;
  • 박형무 (한국전자통신연구소 반도체연구단) ;
  • 박신종 (한국전자통신연구소 반도체연구단)
  • Published : 1994.07.01
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Abstract

The characteristics of 3 inch wafer scale GaAs epitaxial wafer grown by molecular beam epitaxy for LSI process application were studied. The thickness and doping uniformity are characterized and discussed. The growth temperature and growth rate were $600^{\circ}C$ by pyrometer, and 1 $\mu$m/h, respectively. It was found that thickness and doping uniformity were 3.97% and 4.74% respectively across the full 3 inch diameter GaAs epitaxial layer. Also, ungated MESFETs have been fabricated and saturation current measurement showed 4.5% uniformity on 3 inch, epitaxial layer, but uniformity of threshold voltage increase up to 9.2% after recess process for MESFET device.

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