• 한국진공학회:학술대회논문집
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• 한국진공학회 1995년도 제8회 학술발표회 논문개요집
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• pp.21-21
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• 1995

• 한국광학회지
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• 제14권5호
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• pp.504-508
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• 2003

최근 전자산업계에 새롭게 널리 생산되는 마이크로 전자부품들은 왜곡이 최소화된 정밀한 외관 형상을 갖도록 제조되고 관리되지만, 측정 대상의 표면이 가시광 영역에서 광산란되는 특징을 가짐으로 인해, 기존의 피죠나 마이켈슨 형태의 비교간섭법으로는 고정밀의 삼차원 형상측정이 용이하지 아니하였다. 본 논문에서는 광섬유를 이용한 새로운 개념의 점회절 간섭계를 제안하고, 이를 광산란 거친표면의 대표적인 제품인 칩패키지와 실리콘 웨이퍼의 삼차원 형상 측정에 적용하였다. 측정결과 66 mm 측정영역에서 측정 형상오차 PV(peak-to-valley value) 5.6 $\mu\textrm{m}$, 분산값($\sigma$) 1.5 $\mu\textrm{m}$를 획득함으로써 기존의 비교 간섭 측정법에 비해 더욱 향상된 측정 정밀도를 획득하였다.

• 센서학회지
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• 제24권1호
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• pp.10-14
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• 2015

This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area > 20%) under a high-frequency (HF) condition with nonoptimized processing parameters results in damage to the etched sidewall. Therefore, in this study, optimization was performed under a low-frequency (LF) condition. The HF method, which is typically used for through-silicon via (TSV) technology, applies a high etch rate and cannot be easily adapted to processes sensitive to sidewall damage. The optimal etching profile was determined by controlling various parameters for the DRIE of a large Si wafer area (open area > 20%). The optimal processing condition was derived after establishing the correlations of etch rate, uniformity, and sidewall damage on a 6-in Si wafer to the parameters of coil power, run pressure, platen power for passivation etching, and $SF_6$ gas flow rate. The processing-parameter-dependent results of the experiments performed for optimization of the etching profile in terms of etch rate, uniformity, and sidewall damage in the case of large Si area etching can be summarized as follows. When LF is applied, the platen power, coil power, and $SF_6$ should be low, whereas the run pressure has little effect on the etching performance. Under the optimal LF condition of 380 Hz, the platen power, coil power, and $SF_6$ were set at 115W, 3500W, and 700 sccm, respectively. In addition, the aforementioned standard recipe was applied as follows: run pressure of 4 Pa, $C_4F_8$ content of 400 sccm, and a gas exchange interval of $SF_6/C_4F_8=2s/3s$.

• 한국기계가공학회지
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• 제7권1호
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• pp.47-52
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• 2008

We present a 3-D profiler specially devised for the profile measurement of rough surfaces that are difficult to be measured with conventional non-contact interferometer. The profiler comprises multiple two-point-diffraction sources made of single-mode optical fibers. Test measurement proves that the proposed profiler is well suited for the warpage inspection of microelectronics components with rough surface, such as unpolished backsides of silicon wafers and plastic molds of integrated-circuit chip package.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.482-483
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• 2009

In chemical mechanical planarization (CMP) process, the uniformity of stress acting on wafer surface is a key factor for uniform material removal of thin film especially in the oxide CMP. In this paper, we analyze the stress on the contact region between wafer and pad with finite-element analysis (FEA). The setting pressure acting on wafer back side was $500g/cm^2$ and the retainer pressure was changed from 300 to $700g/cm^2$. The polishing test is also done with the same conditions. The material removal rate profiles well-matched with stress distribution.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.309-313
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• 2006

Pad surface characteristics such as roughness, groove and wear rate of pad have a effect on the within wafer non-uniformity(WIWNU) in chemical mechanical polishing(CMP). Although WIWNU increases as the uniformity of roughness(Rpk: Reduced peak height) becomes worse in an early stage of polishing time, WIWNU decreases as non-uniformity of the Rpk value. Also, WIWNU decreases with the reduction of the pad stiffness, though original mechanical properties of pad are unchanged by the grooving process. In addition, conditioning process causes the inequality of pad wear during in CMP. The profile of pad wear generated by the conditioning process has a significant effect on the WIWNU. These experiments results could help to understand the effect of pad surface characteristics in CMP.

• 대한기계학회논문집A
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• 제27권12호
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• pp.2110-2117
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• 2003

A physics-based material removal model in various scales is described and a feature scale simulation for a chemical mechanical polishing (CMP) process is performed in this work. Three different scales are considered in this model, i.e., abrasive particle scale, asperity scale and wafer scale. The abrasive particle and the asperity scales are combined together and then homogenized to result in force balance conditions to be satisfied in the wafer scale using an extended Greenwood-Williamson and Whitehouse-Archard statistical model that takes into consideration the joint distribution of asperity heights and asperity tip radii. The final computation is made to evaluate the material removal rate in wafer scale and a computer simulation is performed for detailed surface profile variations on a representative feature. The results show the dependence of the material removal rate on the joint distribution, applied external pressure, relative velocity, and other operating conditions and design parameters.

• 전자공학회논문지A
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• 제31A권7호
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• pp.69-75
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• 1994

A very fine pattern formation process using double exposure is investigated, which can overcome the resolution limit of optical wafer stepper. The very fine pattern can be obtained by moving the edge profile of large pattern by means of moving the stepper stage. The simulation results show that the light transmittance decrease bellow 9%, and the contrast increase to 16.6% for the 0.3$\mu$m photoresist pattern exposeed by the double exposure using i-line wafer stepper. And the experimental results show that fine photoresist pattern as short as 0.2$\mu$m can be obtained without a loss of photoresist thickness. Also, it proves that the depth of focus for 0.3$\mu$m pattern is longer than $1.5\mu$m. And, the very fine negative photoresist pattern was formmed by using the double exposure technique and the image reversal process.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.93-98
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• 2008

We investigated the effect of process temperature on removal rate and non-uniformity based on single head kinematics in oxide CMP. Generally, it has been known that the temperature profile directly transfers to the non~uniformity of removal rate on the wafer, which has similar tendency with the sliding distance of wafer. Experimental results show that platen velocity is a dominant factor in removal rate as well as average temperature. However, the non-uniformity does not coincide between process temperature and removal rate, due to slurry accumulation and low deviation of temperature. Resultantly, the removal rate is strongly dependent on the rotational speed of platen, and its non -uniformity is controlled by the rotational speed of polishing head. It means lower WIWNU (With-in-wafer-non-uniformity) can be achieved in the region of higher head speed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.86-87
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• 2007

The dispersive method of white-light interferometry is proper for in-line 3-D inspection of dielectric thin-film thickness to be used in the semiconductor and flat-panel display industry. This research is the measurement application of CMP patterned wafer. The results describe 3-D and 2-D profile of the step height during polishing time.