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http://dx.doi.org/10.4313/JKEM.2008.21.2.093

Effect of Temperature on Polishing Properties in Oxide CMP  

Kim, Young-Jin (부산대학교 정밀가공시스템)
Park, Boum-Young (부산대학교 기계공학부)
Kim, Hyoung-Jae (한국생산기술연구원 초정밀성형가공팀)
Jeong, Hae-Do (부산대학교 기계공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.2, 2008 , pp. 93-98 More about this Journal
Abstract
We investigated the effect of process temperature on removal rate and non-uniformity based on single head kinematics in oxide CMP. Generally, it has been known that the temperature profile directly transfers to the non~uniformity of removal rate on the wafer, which has similar tendency with the sliding distance of wafer. Experimental results show that platen velocity is a dominant factor in removal rate as well as average temperature. However, the non-uniformity does not coincide between process temperature and removal rate, due to slurry accumulation and low deviation of temperature. Resultantly, the removal rate is strongly dependent on the rotational speed of platen, and its non -uniformity is controlled by the rotational speed of polishing head. It means lower WIWNU (With-in-wafer-non-uniformity) can be achieved in the region of higher head speed.
Keywords
Oxide CMP; Single head kinematics; Temperature; Removal rate; Non-uniformity;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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