Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Temperature on Polishing Properties in Oxide CMP

산화막 CMP에서 발생하는 온도가 연마특성에 미치는 영향

  • 김영진 (부산대학교 정밀가공시스템) ;
  • 박범영 (부산대학교 기계공학부) ;
  • 김형재 (한국생산기술연구원 초정밀성형가공팀) ;
  • 정해도 (부산대학교 기계공학부)
  • Published : 2008.02.01
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Abstract

We investigated the effect of process temperature on removal rate and non-uniformity based on single head kinematics in oxide CMP. Generally, it has been known that the temperature profile directly transfers to the non~uniformity of removal rate on the wafer, which has similar tendency with the sliding distance of wafer. Experimental results show that platen velocity is a dominant factor in removal rate as well as average temperature. However, the non-uniformity does not coincide between process temperature and removal rate, due to slurry accumulation and low deviation of temperature. Resultantly, the removal rate is strongly dependent on the rotational speed of platen, and its non -uniformity is controlled by the rotational speed of polishing head. It means lower WIWNU (With-in-wafer-non-uniformity) can be achieved in the region of higher head speed.

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References

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