• 제목/요약/키워드: Wafer Cleaning

검색결과 172건 처리시간 0.037초

레이저 CVD법에 의해 퇴적된 OXYNITRIDE막의 기판세정법에 따른 특성에 관한 연구 (A study on the electrical properties by the effect of wafer cleaning of OXYNITRIDE films deposited by Laser CVD)

  • 김창덕;이상권;김태훈;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1280-1282
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    • 1997
  • The oxynitride films were photo-chemically deposited by ArF(wave length: 193nm) excimer laser CVD used to excite and dissociate gas phases $Si_2H_6$, $N_2O$, and $NH_3$ molecules. We obtained various electrical properties when we varied wafer cleaning procedures consisted of a conventional RCA and a two-dip step[4]. The results show the films have low leakage currents and good TZDB properties. We also analyzed the composition of the oxynitride films which have homogeneous composition throughout the film.

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나노입자 제거용 Far Field 메가소닉 개발 (Development of a Far Field type Megasonic for Nano Particle Removing)

  • 이양래;김현세;임의수
    • 한국정밀공학회지
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    • 제30권11호
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    • pp.1193-1201
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    • 2013
  • Improved far field type(improved type) megasonic applicable to the cleaning equipment of single wafer processing type has been developed. In this study, to improve the uniformity of acoustic pressure distribution(APD), we utilize far field with relatively uniform APD, piezoelectric ceramic with a triangle hole in its center to prevent standing wave resulted from radial mode, and reflected wave from the wall of waveguide. On the basis of these methods, two analysis models of improved type were designed to which piezoelectric ceramic of different shape of electrode attached, and APD were analyzed by means of finite element method, and then one of them was selected by analysis results, finally, the selected model was fabricated. Test results show that the fabricated is better in the uniformity of APD than the imported and the conventional, also the fabricated shows high particle removal efficiency of 92.3% using DI water alone as a cleaning solution.

Spectroscopic Ellipsometer를 이용한 a-Si:H/c-Si 이종접합 태양전지 박막 분석 (A Novel Analysis Of Amorphous/Crystalline Silicon Heterojunction Solar Cells Using Spectroscopic Ellipsometer)

  • 지광선;어영주;김범성;이헌민;이돈희
    • 신재생에너지
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    • 제4권2호
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    • pp.68-73
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    • 2008
  • It is very important that constitution of good hetero-junction interface with a high quality amorphous silicon thin films on very cleaned c-Si wafer for making high efficiency hetero-junction solar cells. For achieving the high efficiency solar cells, the inspection and management of c-Si wafer surface conditions are essential subjects. In this experiment, we analyzed the c-Si wafer surface very sensitively using Spectroscopic Ellipsometer for < ${\varepsilon}2$ > and u-PCD for effective carrier life time, so we accomplished < ${\varepsilon}2$ > value 43.02 at 4.25eV by optimizing the cleaning process which is representative of c-Si wafer surface conditions very well. We carried out that the deposition of high quality hydrogenated silicon amorphous thin films by RF-PECVD systems having high density and low crystallinity which are results of effective medium approximation modeling and fitting using spectroscopic ellipsometer. We reached the cell efficiency 12.67% and 14.30% on flat and textured CZ c-Si wafer each under AM1.5G irradiation, adopting the optimized cleaning and deposition conditions that we made. As a result, we confirmed that spectroscopic ellipsometry is very useful analyzing methode for hetero-junction solar cells which need to very thin and high quality multi layer structure.

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웨이퍼 표면의 Si3N4 파티클 제거를 위한 초임계 이산화탄소 세정 (The Removal of Si3N4 Particles from the Wafer Surface Using Supercritical Carbon Dioxide Cleaning)

  • 김용훈;최해원;강기문;안톤커랴킨;임권택
    • 청정기술
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    • 제24권3호
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    • pp.157-165
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    • 2018
  • 본 연구에서는 초임계 이산화탄소와 공용매 첨가물을 이용하여 실리콘 웨이퍼 표면의 $Si_3N_4$ 파티클을 제거하는 기술을 조사하였다. 우선, 몇 가지 계면활성제와 첨가제에 관한 초임계 이산화탄소 용해도 및 파티클 분산성 평가를 통하여 초임계 공정에 대한 적합성을 확인하였다. 다양한 변수를 조정하여 파티클 세정 실험을 진행하여 최적의 제거 조건을 확립하였다. 실험에 사용된 계면활성제는 파티클 제거 효과가 떨어졌으며, 실험 후 이차 오염물이 형성됨을 확인하였다. 반면 trimethyl phosphate는 IPA공용매와 미량의 HF와 혼합된 세정 첨가제로서 초임계 이산화탄소에 5 wt%로 포함한 유체로 온도 $50^{\circ}C$, 압력 2000 psi에서 $15mL\;min^{-1}$의 유속으로 4분 간 세정한 결과, 85%의 파티클 제거 효율을 나타내었다.

반도체 공정에서의 기상 세정장비 개발에 관한 연구 (A Study on the Development of Vapor Phase Cleaning Equipment for Semiconductor Processing)

  • 박헌휘;이춘수;최승우;함승주
    • 한국산학기술학회:학술대회논문집
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    • 한국산학기술학회 2001년도 춘계학술대회 발표논문집
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    • pp.79-81
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    • 2001
  • 저압 기상 영역에서 Anhydrous HF 가스와 Methanol vapor를 사용하는 산화막 식각공정을 수행하기 위하여 (1) 반응기 부피의 최소화, (B) 공정압력의 최소화, (3) 고순도 알루미나 Reactor 적용, (4) Cluster화의 개념을 적용한 VPC 장치를 제작하였다. Wafer의 온도, HF의 분압 및 Working Pressure 등의 공정변수에 따른 Oxide Wafer의 식각특성의 변화를 확인하였다. 또한 Etch Uniformity를 향상시키기 위하여 Shower Head 구조를 변경시켜서 실험하였으며, CFD Simulation을 이용하여 Reactor내에서의 HF gas 및 Methanol vapor의 분율을 예측하였다.