• Progress in Superconductivity
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• v.10 no.2
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• pp.123-127
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• 2009

NaFeAs recently observed superconductivity with the maximum $T_c{\approx}25$ K is investigated using first principles approach. We will address briefly the electronic structure and contrast other superconducting pnictides. This system shows strong two-dimensionality and reduction of flatness in the Fermi surfaces undermines tendencies of magnetic or charge instabilities. As observed in other superconducting pnictides, $Q_M=(\pi,\pi,0)$ antiferromagnetic ordering, which has not been observed clearly yet in this compound, is energetically favored. However, contrast to other superconducting pnictides, the density of states in this ordering shows considerable electron-hole asymmetry, implying efficiency of hole-doping than electron-doping to enhance $T_c$.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1337-1339
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• 1998

The trench termination scheme is introduced for high voltage devices. The curvature of the depletion region at field limiting ring is critical factor to determine the breakdown voltage. The smooth curvature of the depletion junction alleviate the electric field crowding effect around this region. In the trench field limiting ring, the radius of the depletion region is smaller than conventional field limiting ring, but the distance between every trench is spaced small enough to punchthrough before initiation of local breakdown. The trench field limiting ring on silicon can ne formed by RIE followed by oxidation on side wall surface of the trench, and polysilicon filling. The combined termination of this trench floating field ring and field plate have been designed and analyzed. The breakdown simulation by 2-dimensional TCAD shows that the cylindrical junction breakdown voltage for substrate doping might be 99 percent of the ideal breakdwon voltage for substrate doping concentration of $3\times10^{14}cm^{-3}$ with about $100{\mu}m$ of lateral termination width.

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.37-37
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• 2009

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.504-509
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• 2018

The influence of yttrium doping on varistor properties of zinc-vanadium-based ceramics was comprehensively investigated. The average grain size varied slightly between 5.2 and $5.5{\mu}m$ as the yttrium content increased; and similarly, the sintered density varied slightly between 5.47 and $5.51g/cm^3$. The threshold field exhibited a maximum value (5387 V/cm) when the yttrium content was 0.1 mol%. The highest nonlinear exponent (67) was obtained when the yttrium content was 0.05 mol%. The donor concentration increased in the range of $(2.46-5.56){\times}10^{17}cm^{-3}$ as the yttrium content increased, and the maximum barrier height was obtained (1.24 eV) when the yttrium content reached 0.05 mol%.

• Korean Journal of Materials Research
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• v.14 no.5
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• pp.334-337
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• 2004

Perovskite PMN-PZT-based ceramics were prepared and the$ MnO_2$ doping effects on their piezoelectric properties were investigated. Grain size decreased with increasing the $MnO_2$ content, and the pyrochlore phase was not identified in the sintered PMN-PZT ceramics with 0.01～1.0wt% $MnO_2$. Piezoelectric voltage and charge constants were reduced and mechanical quality factor increased with increasing the $MnO_2$ content. However, electromechanical coupling coefficient slightly decreased with increasing the MnO$_2$ content without regard to the grain size.

• Progress in Superconductivity and Cryogenics
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• v.16 no.2
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• pp.33-35
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• 2014

We report here results of a study of superconductivity in the ($Ta_{1-x} Sn_x)Sr_2EuCu_2O_z$ system. We observe resistive superconducting transitions for the samples with x = 0.15-0.3, and the highest superconducting transition has been achieved for the sample with x = 0.2 which reveals onset $T_c$ of 43 K and zero-resistivity of 25 K. Thermoelectric power measurements indicate that Sn doping introduces holes into the system and thereby superconductivity can be achieved in the ($Ta_{1-x} Sn_x)Sr_2EuCu_2O_z$ system.

• Journal of Magnetics
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• v.10 no.1
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• pp.10-13
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• 2005

We have studied effects of the partial substitution of $La^{3+}$ for $A^{2+}$ on the magnetic properties of double perovskites $A_2FeMoO_6$ (A=Ca, Sr and Ba). Polycrystalline $A_{2-x}La_xFeMoO_6(0{\leq}x{\leq}0.2)$ samples have been prepared by the conventional solid-state reaction in a stream of 5% $H_2$/Ar gas. The x-ray data indicate that A=Ca is monoclinic with the space group P$2_1$/n, A=Sr is tetragonal with the space group I4/mmm, and A=Ba is cubic with the space group Fm3m. The substitution of $La^{3+}$ for $A^{2+}$ results in a cell volume increase for A=Ca and a cell volume reduction for A=Ba. The decrease of saturation magnetization with increasing x arises from the reduction of magnetic moment associated with the electron doping and the disorder at the Fe and Mo sites. The partial substitution of magnetic $La^{3+}$ for $A^{2+}$ considerably enhances the Curie temperature $T_c$ from 316 K for x = 0 to 334 K for x = 0.2. This enhancement of $T_c$ with $La^{3+}$ doping originates from electron doping effects in addition to ionic size ones.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1579-1584
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• 2015

In photocatalytic reaction, the doping of metal matter can alter the titania surface properties. As such the metal matter can increase the rate of the reaction. The influence of metal doping and calcination condition of $TiO_2$ photocatalyst was investigated at the batch-type photoreactor. Several metal matters were doped to the $TiO_2$ catalyst to improve photodegradation efficiency. During the experiments, water content was 3wt%, and reactor temperature was $40^{\circ}C$. Palladium-doped $TiO_2$ was found to be the best, where as platinum or tungsten-added also showed good results. Additional doping of platinum or tungsten on Pd/$TiO_2$ had no increase on the removal efficiency. To obtain proper calcination condition, various experiments about calcination temperature and time were carried out. As a result, the optimum calcination condition was temperature of $400^{\circ}C$, time of 1 hour.

• Journal of the Korean Chemical Society
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• v.61 no.2
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• pp.57-64
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• 2017

Monoclinic $VO_2(M)$ nanoparticles codoped with 1.5 at. % W and 2.9 at. % Mg were synthesized by the hydrothermal treatment and post-thermal transformation method of $V_2O_5-H_2C_2O_4-H_2O$ with $Na_2WO_4$ and $Mg(NO_3)_2$. The composite thin film of the W/Mg-codoped $VO_2(M)$ with a commercial acrylic block copolymer was also prepared on PET substrate by wet-coating method. The reversible phase transition characteristics of the codoped $VO_2(M)$ nanoparticles and the composite film were investigated from DSC, resistivity and Vis-NIR transmittance measurements compared with the undoped and Wdoped $VO_2(M)$ samples. Mg-codoping into W-doped $VO_2(M)$ nanoparticles synergistically enhanced the transition characteristics by increasing the sharpness of transition while the transition temperature ($T_c$) lowered by W-doping was maintained. The codoped composite film showed the prominently enhanced NIR switching efficiency compared to only W-doped $VO_2(M)$ film with a lowered $T_c$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.111-111
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• 2007

Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.