Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Yttrium Doping Effect on Varistor Properties of Zinc-Vanadium-Based Ceramics

  • Nahm, Choon-W. (Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University)
  • Received : 2018.06.28
  • Accepted : 2018.08.23
  • Published : 2018.09.30
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Abstract

The influence of yttrium doping on varistor properties of zinc-vanadium-based ceramics was comprehensively investigated. The average grain size varied slightly between 5.2 and $5.5{\mu}m$ as the yttrium content increased; and similarly, the sintered density varied slightly between 5.47 and $5.51g/cm^3$. The threshold field exhibited a maximum value (5387 V/cm) when the yttrium content was 0.1 mol%. The highest nonlinear exponent (67) was obtained when the yttrium content was 0.05 mol%. The donor concentration increased in the range of $(2.46-5.56){\times}10^{17}cm^{-3}$ as the yttrium content increased, and the maximum barrier height was obtained (1.24 eV) when the yttrium content reached 0.05 mol%.

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References

  1. L. M. Levinson and H. R. Philipp, "Zinc Oxide Varistor-a Review," Am. Ceram. Soc. Bull., 65 [4] 639-46 (1986).
  2. T. K. Gupta, "Application of Zinc Oxide Varistor," J. Am. Ceram. Soc., 73 [7] 1817-40 (1990). https://doi.org/10.1111/j.1151-2916.1990.tb05232.x
  3. H. R. Pilipp and L. M. Levinson, "The Physics of Metal Oxide Varistors," J. Appl. Phys., 46 [3] 1332-41 (1976). https://doi.org/10.1063/1.321701
  4. M. Matsuoka, "Nonohmic Properties of Zinc Oxide Ceramics," Jpn. J. Appl. Phys., 10 [6] 736 (1971). https://doi.org/10.1143/JJAP.10.736
  5. K. Mukae, "Zinc Oxide Varistors with Praseodymium Oxide," Am. Ceram. Bull., 66 [10] 1329-31 (1987).
  6. C.-W. Nahm and C.-H. Park, "Microstucture, Electrical Properties, and Degradation Behavior of Praseodymium Oxides-based Zinc Oxide Varistors Doped with $Y_2O_3$," J. Mater. Sci., 35 [12] 3037-42 (2000). https://doi.org/10.1023/A:1004749214640
  7. J.-K. Tsai and T.-B. Wu, "Non-Ohmic Characteristics of ZnO-$V_2O_5$ Ceramics," J. Appl. Phys., 76 [8] 4817-22 (1994). https://doi.org/10.1063/1.357254
  8. J.-K. Tsai and T.-B. Wu, "Microstructure and Nonohmic Properties of Binary ZnO-$V_2O_5$ Ceramics Sintered at $900^{\circ}C$," Mater. Lett., 26 [3] 199-203 (1996). https://doi.org/10.1016/0167-577X(95)00217-0
  9. H.-H. Hng and P. L. Chan, "Effects of $MnO_2$ Doping in $V_2O_5$-Doped ZnO Varistor System," Mater. Chem. Phys., 75 [1-3] 61-6 (2002). https://doi.org/10.1016/S0254-0584(02)00031-7
  10. C.-S. Chen, "Effect of Dopant Valence State of Mn-ions on the Microstructures and Nonlinear Properties of Microwave Sintered ZnO-$V_2O_5$ Varistors," J. Mater. Sci., 38 [5] 1033-38 (2003). https://doi.org/10.1023/A:1022397730247
  11. H. Pfeiffer and K. M. Knowles, "Effects of Vanadium and Manganese Concentrations on the Composition, Structure and Electrical Properties of ZnO-rich $MnO_2-V_2O_5-ZnO$ Varistors," J. Eur. Ceram. Soc., 24 [6] 1199-203 (2004). https://doi.org/10.1016/S0955-2219(03)00413-8
  12. C.-W. Nahm, "Microstructure and Varistor Properties of $ZnO-V_2O_5-MnO_2$-Based Ceramic," J. Mater. Sci., 42 [19] 8370-73 (2007). https://doi.org/10.1007/s10853-007-1955-5
  13. M. Zhao, X. C. Liu, W. M. Wang, F. Gao, and C. S. Tian, "Two-step Method Fabricating High Nonlinearity ZnVSb Based Varistors," Ceram. Int., 34 [6] 1425-29 (2008). https://doi.org/10.1016/j.ceramint.2007.03.027
  14. C.-W. Nahm, "Influence of Nb Addition on Microstructure, Electrical, Dielectric Properties, and Aging Behavior of MnCoDy Modified Zn-V-Based Varistors," J. Mater. Sci.: Mater. Electron., 21 [6] 540-47 (2010). https://doi.org/10.1007/s10854-009-9954-8
  15. Z. Ming, S. Yu, and T. C. Sheng, "Grain Growth of ZnO-$V_2O_5$ Based Varistor Ceramics with Different Antimony Dopants," J. Eur. Ceram. Soc., 31 [13] 2331-37 (2011). https://doi.org/10.1016/j.jeurceramsoc.2011.05.040
  16. M. Mirzayi and M. H. Hekmatshoar, "Effect of $V_2O_5$ on Electrical and Microstructural Properties of ZnO Ceramics," Phys. B, 414 [4] 50-5 (2013). https://doi.org/10.1016/j.physb.2013.01.020
  17. C.-W. Nahm, Sintering Effect on Pulse Aging Behavior of Zn-V-Mn-Co-Nb Varistors. J. Am. Ceram. Soc., 94 [8] 2269-72 (2011). https://doi.org/10.1111/j.1551-2916.2011.04626.x
  18. C.-W. Nahm, "DC Accelerated Aging Behavior of Co-Dy-Nb Doped Zn-V-M-Based Varistors with Sintering Process," J. Mater. Sci.: Mater. Electron., 22 [4] 444-51 (2011). https://doi.org/10.1007/s10854-010-0157-0
  19. C.-W. Nahm, "Aging Characteristics of ZnO-$V_2O_5$-based Varistors for Surge Protection Reliability," Microelectron. Reliab., 54 [12] 2836-42 (2014). https://doi.org/10.1016/j.microrel.2014.08.013
  20. C.-W. Nahm, "Effect of Sintering Process on Electrical Properties and Ageing Behavior of ZnO-$V_2O_5-MnO_2-Nb_2O_5$ Varistor Ceramics," J. Mater. Sci.: Mater. Electron., 23 [2] 457-63 (2012). https://doi.org/10.1007/s10854-011-0512-9
  21. C.-W. Nahm, "Effect of Gadolinia Addition on Varistor Characteristics of Vanadium Oxide-Doped Zinc Oxide Ceramics," J. Mater. Sci.: Mater. Electron., 24 [12] 4839-46 (2013). https://doi.org/10.1007/s10854-013-1485-7
  22. J. C. Wurst and J. A. Nelson, "Lineal Intercept Technique for Measuring Grain Size in Two-Phase Polycrystalline Ceramics," J. Am. Ceram. Soc., 55 [97-12] 109-11 (1972). https://doi.org/10.1111/j.1151-2916.1972.tb11224.x
  23. M. Mukae, K. Tsuda, and I. Nagasawa, "Capacitance-vsvoltage Characteristics of ZnO Varistor," J. Appl. Phys., 50 [6] 4475-76 (1979). https://doi.org/10.1063/1.326411
  24. G. D. Mahan, "Intrinsic Defects in ZnO Varistors," J. Appl. Phys., 54 [7] 3825-32 (1983). https://doi.org/10.1063/1.332607
  25. T. K. Gupta and W. G. Carlson, "A Grain-boundary Defect Model for Instability/Stability of a ZnO Varistor," J. Mater. Sci., 20 [3] 3487-500 (1985). https://doi.org/10.1007/BF01113755

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