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http://dx.doi.org/10.4191/kcers.2018.55.5.10

Yttrium Doping Effect on Varistor Properties of Zinc-Vanadium-Based Ceramics  

Nahm, Choon-W. (Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University)
Publication Information
Journal of the Korean Ceramic Society / v.55, no.5, 2018 , pp. 504-509 More about this Journal
Abstract
The influence of yttrium doping on varistor properties of zinc-vanadium-based ceramics was comprehensively investigated. The average grain size varied slightly between 5.2 and $5.5{\mu}m$ as the yttrium content increased; and similarly, the sintered density varied slightly between 5.47 and $5.51g/cm^3$. The threshold field exhibited a maximum value (5387 V/cm) when the yttrium content was 0.1 mol%. The highest nonlinear exponent (67) was obtained when the yttrium content was 0.05 mol%. The donor concentration increased in the range of $(2.46-5.56){\times}10^{17}cm^{-3}$ as the yttrium content increased, and the maximum barrier height was obtained (1.24 eV) when the yttrium content reached 0.05 mol%.
Keywords
Yttrium; Dielectric properties; Electrical properties; Zinc-vanadium-based ceramics;
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