• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.224-227
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• 2016

This paper proposes a design of W-band mm-wave wideband monopulse comparator using waveguide structure for applications. The main idea of proposed design is to combine a self-compensating phase shifter on $90^{\circ}$ hybrid for wideband $180^{\circ}$ hybrid. Using multiple conventional phase shifters, because of their narrow-band characteristics, tends to restrict working bandwidth of system including antennas. Proposed comparator could relieve the problem since it applies the self-compensating phase shifter. The comparator has waveguide structure so it shows excellent characteristic in loss. It also show wideband characteristic in amplitude and phase response between ports.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.3
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• pp.264-272
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• 2009

In this paper, a Ka-band 10 W power amplifier module is designed and fabricated using MIC(Microwave Integrated Circuit) module technology which combines multiple power MMIC(Monolithic Microwave Integrated Circuit) chips on a thin film substrate. Modified Wilkinson power dividers/combiners are used for millimeter wave modules and CBFGC-PW-Microstrip transitions are utilized for reducing connection loss and suppressing resonance in the high-gain and high-power modules. The power amplifier module consists of seven MMIC chips and operates in a pulsed mode. for the pulsed mode operation, a gate pulse control circuit supplying the control voltage pulses to MMIC chips is designed and applied. The fabricated power amplifier module shows a power gain of about 58 dB and a saturated output power of 39.6 dBm at a center frequency of the interested frequency band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.12
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• pp.982-992
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• 2017

In this paper, we introduce a method of selection for the optimal transmission polarization of a W-band seeker through the extraction of the one-dimensional scattering center of a ground tank target. We calculated the surface scattering and edge scattering using the shooting and bouncing ray tracing method of the CST A-solver. Based on 4-channel RCS data, using the one-dimensional RELAX algorithm, which is a kind of spectral estimation technique, scattering centers of ground targets were extracted. According to the changes in the polarization state and look angle, we compared and analyzed the scattering center results. Through simulation, we verified that the scattering center results can be applied when feature vectors are used for target recognition.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.4
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• pp.105-113
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• 2010

In this paper, a 1.485 Gbps video signal transmission system using the carrier frequency of 240 GHz band was designed and simulated. The sub-harmonic mixer based on Schottky barrier diode was simulated in the transmitter and receiver. Both of heterodyne and direct detection receivers were simulated for each performance analysis. The ASK modulation was used in the transmitter and the envelop detection method was used in the receiver. The transmitter simulation results showed that the RF output power was -11.4 dBm($73{\mu}W$), when the IF input power was -3 dBm(0.5 mW) at the LO power of 7 dBm(5 mW) in sub-harmonic mixer, which corresponds to SSB(Single Side Band) conversion loss of 8.4 dB. This value is similar to the conversion loss of 8.0 dB(SSB) of VDI's commercial model WR3.4SHM(220~325 GHz) at 240 GHz. The combined transmitter and receiver simulation results showed that the recovered signal waveforms were in good agreement to the transmitted 1.485 Gbps NRZ signal.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.9
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• pp.872-875
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• 2016

In this paper, the turnstile junction-based Ortho-Mode Transducer(OMT) is designed and manufactured. It is usually well-known that turnstile junctions have symmetry structure of waveguide so the higher order modes, which occurs inside the waveguide, can be cancelled. Because of these symmetrical properties, the turnstile junction-based OMTs have merits like high transmission and low return loss characteristic in broadband and two different modes propagate orthogonally in common port resulting in the fully realization of double polarization. The designed OMT has the application of Radar Seeker and operates in W-band(94 GHz), the millimeter wave frequency. The average of return loss value of manufactured OMT is lower than -20 dB and it has bandwidth characteristic of over 500 MHz.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.4
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• pp.293-297
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• 2020

This paper tried to find the best conditions that could be applied to solar cells by deposition of CdS thin film on ITO glass using multiplex displacement sputter system. RF power was changed to 50W, 100W, and 150W and sputtering time was set to 10 minutes. As a result of the measurement of transmittance, the average transmittance in the area of 400 to 800 nm was measured from 60% to 80% and the best characteristic was measured at 150W at 84%. The band gap was also measured at 3.762eV at 50W, 4.037eV at 100W and 4.052eV at 150W. In XRD analysis, even as RF power was increased, it was observed as a structure called Wurtzite (hexagonal) of CdS. And as RF power increased, the particles were large and uniformly deposited, but at 100W the particles were densely composed and dense. And the thickness measurement showed that the RF power increased uniformly.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.2
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• pp.122-127
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• 2021

This paper produces CdS thin film using ITO glass as substrates. The MDS (Multiplex Deposition Sputter System) was used to produce devices by changing RF power and deposition time. The manufactured specimen was analyzed for its optical properties. The purpose of this paper is to find the fabrication conditions that can be applied to the photo-absorbing layer of solar cells. When RF power was 50W and deposition time was 10 minutes, the thickness was measured at 64Å. At 100W, the thickness was measured at 406Å and at 150 W, the thickness was measured at 889Å. Thin films were found to increase in thickness as RF power increased. As a result of the light transmittance measurement, 550-850nm was observed to have a transmittance of approximately 70% or more when the RF power was 50W, 100W, and 150W. Increasing RF power increased thickness and increased particle size, resulting in increased thin film density, resulting in reduced light transmittance. When RF power was 100W and deposition time was 15 minutes, the band gap was calculated at 3.998eV. When deposition time is 20 minutes, it is 3.987eV, 150W is 3.965eV at 15 minutes, and 3.831eV at 20 minutes. It was measured that the band gap decreased as the RF power increased. At XRD analysis, diffraction peaks at 2Θ=26.44 could be observed regardless of changes in RF power and deposition time. The FWHM was shown to decrease with increasing deposition time. And it was measured that the particle size increased as RF power was constant and deposition time was increased.

• ETRI Journal
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• v.42 no.4
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• pp.549-561
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• 2020

We developed a 0.1-㎛ metamorphic high electron mobility transistor and fabricated a W-band monolithic microwave integrated circuit chipset with our in-house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz-108 GHz band and achieved excellent spurious suppression. A low-noise amplifier (LNA) with a four-stage single-ended architecture using a common-source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W-band image-rejection mixer (IRM) with an external off-chip coupler was also designed. The IRM provided a conversion gain of 13 dB-17 dB for RF frequencies of 80 GHz-110 GHz and image-rejection ratios of 17 dB-19 dB for RF frequencies of 93 GHz-100 GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.698-701
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• 2008

본 논문에서는 상용소자의 특성과 상향변환기의 모듈에 소요되는 링크전력을 비교 분석하여 Ka-band VSAT UPCONVERTER를 설계하였다. $30GHz{\sim}31GHz$대역에서 2W 출력신호를 나타내기 위하여 상향변환시스템은 IF증폭단, 감쇄기, 믹서단, 대역통과필터 및 2W 전력증폭단으로 구성시켰으며 상용MMIC를 이용하여 설계된 상향변환모듈은 $6.29dBm{\sim}7.88dBm$의 출력전력, 이득은 $23.19{\sim}28.15dB$을 Cain flatness는 4.95dB를 나타내었다. 최종단의 전력증폭기는 $33.75{\sim}34.96dBm$의 출력전력을 나타내었으며 이득은 $38.5{\sim}41.98dB$로 측정되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.276-279
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• 2015

This paper presents two 3-stage D-band stacked amplifiers developed in a $0.13-{\mu}m$ SiGe BiCMOS technology, employed to compare the conventional cascode topology and the common-base (CB)/CB stacked topology. AMP1 employs two cascode stages followed by a CB/CB stacked stage, while AMP2 is composed of three CB/CB stacked stages. AMP1 showed a 17.1 dB peak gain at 143.8 GHz and a saturation output power of -4.2 dBm, while AMP2 showed a 20.4 dB peak gain at 150.6 GHz and a saturation output power of -1.3 dBm. The respective power dissipation was 42.9 mW and 59.4 mW for the two amplifiers. The results show that CB/CB stacked topology is favored over cascode topology in terms of gain near 140 GHz.