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http://dx.doi.org/10.17661/jkiiect.2020.13.4.293

A Study on CdS Deposition using Sputtering  

Lee, Dal-Ho (Department of Electronic Engineering, Gachon University)
Park, Jung-Cheul (Department of Electronic Engineering, Gachon University)
Publication Information
The Journal of Korea Institute of Information, Electronics, and Communication Technology / v.13, no.4, 2020 , pp. 293-297 More about this Journal
Abstract
This paper tried to find the best conditions that could be applied to solar cells by deposition of CdS thin film on ITO glass using multiplex displacement sputter system. RF power was changed to 50W, 100W, and 150W and sputtering time was set to 10 minutes. As a result of the measurement of transmittance, the average transmittance in the area of 400 to 800 nm was measured from 60% to 80% and the best characteristic was measured at 150W at 84%. The band gap was also measured at 3.762eV at 50W, 4.037eV at 100W and 4.052eV at 150W. In XRD analysis, even as RF power was increased, it was observed as a structure called Wurtzite (hexagonal) of CdS. And as RF power increased, the particles were large and uniformly deposited, but at 100W the particles were densely composed and dense. And the thickness measurement showed that the RF power increased uniformly.
Keywords
band gap; deposition; ITO glass; RF power; transmittance; XRD;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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