JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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D-band Stacked Amplifiers based on SiGe BiCMOS Technology

  • Yun, Jongwon (School of Electrical Engineering, Korea University) ;
  • Kim, Hyunchul (Virginia PolytechInstitue and State University) ;
  • Song, Kiryong (School of Electrical Engineering, Korea University) ;
  • Rieh, Jae-Sung (School of Electrical Engineering, Korea University)
  • Received : 2014.11.22
  • Accepted : 2015.03.18
  • Published : 2015.04.30
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Abstract

This paper presents two 3-stage D-band stacked amplifiers developed in a $0.13-{\mu}m$ SiGe BiCMOS technology, employed to compare the conventional cascode topology and the common-base (CB)/CB stacked topology. AMP1 employs two cascode stages followed by a CB/CB stacked stage, while AMP2 is composed of three CB/CB stacked stages. AMP1 showed a 17.1 dB peak gain at 143.8 GHz and a saturation output power of -4.2 dBm, while AMP2 showed a 20.4 dB peak gain at 150.6 GHz and a saturation output power of -1.3 dBm. The respective power dissipation was 42.9 mW and 59.4 mW for the two amplifiers. The results show that CB/CB stacked topology is favored over cascode topology in terms of gain near 140 GHz.

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References

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