• IEIE Transactions on Smart Processing and Computing
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• v.4 no.3
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• pp.158-162
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• 2015

A low phase noise CMOS voltage controlled oscillator(VCO) for multi-band/multi-standard RF Transceivers is presented. For both wide tunability and low phase noise characteristics, Hybrid inductor which uses both bondwire inductor and planar spiral inductor in the same area, is proposed. This approach reduces inductance variation and presents high quality factor without custom-designed single-turn inductor occupying large area, which improves phase noise and tuning range characteristics without additional area loss. An LC VCO is designed in a 0.13um CMOS technology to demonstrate the hybrid inductor concept. The measured phase noise is -121dBc/Hz at 400KHz offset and -142dBc/Hz at 3MHz offset from a 900MHz carrier frequency after divider. The tuning range of about 28%(3.15 to 4.18GHz) is measured. The VCO consumes 7.5mA from 1.3V supply and meets the requirements for GSM/EDGE and WCDMA standard.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.12
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• pp.3215-3226
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• 1996

In this paper a K-band harmonic oscillator competitive to ordinary Push-Push type oscillators is introduced. This oscillator is composed of two-X-band dielectric resonance circuits. To favor its harmonic generation, the load effect and the bias effect are studied to allow the maximum harmonic distortion. As results, the dielectric resonated load and the class A bias are used for the 2nd harmonic generation. analytical study for modelling of voltage controlled dielectric resonator is carried out with theoretical background. The performance of the circuit is evaluated by simulation using harmonic balanced method. The novel structure has ont only a voltage tuning circuit but also an output port at fundamental frequency as the function of prescaler for phase lockede loop application on the just single oscillation structure. In experimentation, the output freqneyc of the 2nd harmonic signal is 20.5GHz and the maximum power level of output is +5.5dBm without additional post amplifiers. the harmonic oscillator exhibits -30dBc of high fundamental frequency rejection without added extra filters. The phase noise of -90dBc/Hz at 100kHz off-carrier has been achieved under free running condition, that satisfies phase noise requirement of IESS 308. The proposed oscillator may be utilized as the clean and stable fixed local oscillator in Transmit Block Upconvertor(TBU) or Low oise Block downconvertor(LNB) for K/Ka-band digital communications and satellite broadcastings.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.729-736
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• 2011

In this paper, we propose a varactor-diodeless voltage-controlled oscillator operating at X-band, and verify the possibility of applying to a receiver for microwave radar signal detection applications. The proposed VCO is realized by only single RF BJT device as a varactor diode is substitued by a intrinsic collector-base PN-junction of the active device which is used to generate negative resistance. The fabricated VCO meets the specification of the receiver, which has a 11.20~11.75 GHz tuning bandwidth with respect to the tuning voltage, 1.0~7.0 V, output power of 9.0~12.0 dBm and linear frequency tuning performance.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.6C
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• pp.619-624
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• 2002

In this paper, a novel architecture of programmable divider with fifty percent duty cycle output and programmable dividing number has been proposed. Through HSPICE simulation, a 900MHz frequency synthesizer with proposed (sequency divider has designed in a standard 0.25㎛ CMOS technology To verify the operation of proposed frequency divider, a chip had been fabricated using 0.65㎛ 2-poly, 3-metal standard CMOS processing and experimental result shows that the proposed frequency divider works well. The designed voltage controlled oscillator(VCO) has a center frequency of 900MHz a tuning range of $\pm$10%, and a gain of 154HHz/V. The simulated frequency synthesizer performance has a settling time of 1.5$\mu$s, a frequency range from 820MHz to IGHz and power consumption of 70mW at 2.5V power supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.3
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• pp.34-41
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• 2011

This paper presents a wide tuning range, fine-resolution DCO (Digitally Controlled Oscillator) with an active inductor. In order to control the frequency of the DCO, the transconductance of the active inductor is tuned digitally. In addition, the DCO gain needs to be calibrated digitally to compensate for gain variations. To cover the wide tuning range, an automatic three-step coarse tuning scheme is proposed. The DCO total frequency tuning range is 1.4 GHz (2.1 GHz to 3.5 GHz), it is 58 % at 2.4 GHz. An effective frequency resolution is 0.14 kHz/LSB. The proposed DCO is implemented in 0.13 ${\mu}m$ CMOS process. The total power consumption is 6.6 mW from a 1.2 V supply voltage. The phase noise of the DCO output at 2.4 GHz is -120.67 dBc/Hz at 1 MHz offset.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.8
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• pp.41-46
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• 2012

A quadrature voltage controlled oscillator(QVCO) for X-band is presented in this paper. The QVCO has fabricated in Charted $0.13{\mu}m$ CMOS process. The QVCO consists of two cross-coupled differential VCO and two differential buffers. The QVCO is controlled by 4 bit of capacitor bank and control voltage of varactor. To have a linear quality factor of varactors, voltage biases of varactors are difference. The QVCO generates frequency tuning range from 6.591 GHz to 8.012 GHz. The phase noise is -101.04 dBc/Hz at 1MHz Offset when output frequency is 7.150 GHz. The supply voltage is 1.5 V and core current 6.5-8.5 mA.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.255-265
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• 2012

This paper presents a 15-GHz multiphase rotary traveling-wave voltage-controlled oscillator (RTW VCO) where a shielded coplanar stripline (CPS) is exploited to provide better shielding protection and lower phase noise at a moderate cost of characteristic impedance and power consumption. Test chips were implemented in a standard 90-nm CMOS process, demonstrating the measured results of 2-GHz frequency tuning range, -11.3-dBm output power, -109.6-dBc/Hz phase noise at 1-MHz offset, and 2-ps RMS clock jitter at 15 GHz. The chip core occupies the area of $0.2mm^2$ and dissipates 12 mW from a single 1.2-V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.1 s.92
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• pp.92-101
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• 2005

In this paper, the Gunn diode mount is experimentally designed for use in a W-band waveguide voltage controlled oscillator(VCO). The role of the Gunn diode mount is to match the low impedance of the Gunn diode to the high impedance of waveguide. Computer simulations of VCO characteristics such as center frequency, frequency tuning range, and output power are carried out for various values of disc diameter, disc height, post diameter, and utilized in the experimental optimization of the Gunn diode mount. The designed VCO shows excellent characteristics; 93.9 GHz center fiequency, 600 MHz frequency tuning range with $2{\%}$ linearity, 16 dBm output power.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.6
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• pp.63-69
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• 2008

Reconfigurable RF one-chip solutions have been researched with the objective of designing for smaller-sized and more economical RF transceiver and it can be applied to a vehicular wireless terminal. The proposed voltage-controlled oscillator satisfies the targeted frequency range ($4.2{\sim}5.4\;GHz$) and the frequency planning which correspond to the standards such as CDMA(IS-95), PCS, GSM850, EGSM, WCDMA, WLAN, Bluetooth, WiBro, S-DMB, DSRC, GPS, and DVB-H/DMB-H/L(L Band). In order to improve phase noise performance, PMOS is adopted in the cross-coupled pair, the tail current source and MOS varactor in this VCO and differential-typed switching is proposed in capacitor array. Based on the measurement results, a total power dissipation is $5.3{\sim}6.0\;mW$ at 1.8 V power supply voltage. The oscillator is tuned from 4.05 to 5.62 GHz; The tuning range is 33%. The phase noise is -117.16 dBc/Hz at 1 MHz offset frequency and the FOM (Figure Of Merit) is $-180.84{\sim}-180.5$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.811-818
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• 2016

A continuous fine-tuning phase locked loop with an additional negative feedback loop has been proposed. When the phase locked loop is out-of-lock, the phase locked loop has a fast locking characteristic using the continuous band-selection loop. When the phase locked loop is near in-lock, the bandwidth is narrowed with the fine loop. The additional negative feedback loop consists of a voltage controlled oscillator, a frequency voltage converter and its internal loop filter. It serves a negative feedback function to the main phase locked loop, and improves the phase noise characteristics and the stability of the proposed phase locked loop. The additional negative feedback loop makes the continuous fine-tuning loop work stably without any voltage fluctuation in the loop filter. Measurement results of the fabricated phase locked loop in $0.18{\mu}m$ CMOS process show that the phase noise is -109.6dBc/Hz at 2MHz offset from 742.8MHz carrier frequency.